In this study, ITO thin films were fabricated on a glass substrate at different thicknesses without introducing oxygen using RF sputtering system. The structural, electrical, and optical properties were evaluated at various thicknesses ranging from 50 to 300 mm. As the thickness of deposited ITO thin film become thicker from 50 to 100 mm, carrier concentration, mobility, and band gap energy also increased while the resistivity and transmittance decreased in the visible light region. When the film thickness increased from 100 to 300 mm, the carrier concentration, mobility, and band gap energy decreased while the resistivity and transmittance increased. The optimum electrical properties were obtained for the ITO film 100 nm. After optimizing the thickness, the ITO thin films were post-annealed at different temperatures ranging from 100 to 300℃. As the annealing temperature increased, the ITO crystal phase became clearer and the grain size also increased. In particular, the ITO thin film annealed at 300℃ indicated high carrier concentration (4.32 × 10²¹ cm^-3), mobility (9.01 cm2/V·s) and low resistivity (6.22 × 10^-4 Ω·cm). This means that the optimal post-annealing temperature is 300℃ and this ITO thin film is suitable for use in solar cells and display application.

The subthreshold swing (SS) of an asymmetric junctionless double gate (AJLDG) MOSFET is analyzed by the use of Gaussian function. In the asymmetric structure, the thickness of the top/bottom oxide film and the flat-band voltages of top gate (Vfbf) and bottom gate (Vfbb) could be made differently, so the change in the SS for these factors is analyzed with the projected range and standard projected deviation which are parameters for the Gaussian function. An analytical subthreshold swing model is presented from the Poisson’s equation, and it is shown that this model is in a good agreement with the numerical model. As a result, the SS changes linearly according to the geometric mean of the top and bottom oxide film thicknesses, and if the projected range is less than half of the silicon thickness, the SS decreases as the top gate oxide film is smaller. Conversely, if the projected range is bigger than a half of the silicon thickness, the SS decreases as the bottom gate oxide film is smaller. In addition, the SS decreases as Vfbb-Vfbf increases when the projected range is near the top gate, and the SS decreases as Vfbb-Vfbf decreases when the projected range is near the bottom gate. It is necessary that one should pay attention to the selection of the top/bottom oxide thickness and the gate metal in order to reduce the SS when designing an AJLDG MOSFET.

Global warming is accelerating due to the use of fossil fuels that have been used continuously for centuries. Now, humankind recognizes its seriousness, and is conducting research on searching for eco-friendly and sustainable energy. In the field of solar energy, which is a kind of eco-friendly and sustainable, many studies are being conducted to enhance the output performance of the module. In this study, the output improvement for the shingled module structure was studied. In order to improve the output performance of the module, the thickness of the encapsulant was increased, and the lamination process conditions have been improved accordingly. After that, the crosslinking rate was analyzed, and the suitability of the lamination process conditions was judged using this. In addition, a peeling test was conducted to analyze the correlation between the adhesion of the encapsulant and the output performance of the module. Finally, the optimization for the encapsulant material and the lamination process conditions for high-power shingled modules was established, and accordingly, the market share of high-power shingled modules in the solar module market can be expected to rise.

We present a subthreshold swing model for a symmetric junctionless double gate MOSFET. The scale length λ₁ required to obtain the potential distribution using the Poisson's equation is a criterion for analyzing the short channel effect by an analytical model. In general, if the channel length L_g satisfies L_g ＞ 1.5λ₁, it is known that the analytical model can be sufficiently used to analyze short channel effects. The scale length varies depending on the channel and oxide thickness as well as the dielectric constant of the channel and the oxide film. In this paper, we obtain the scale length for a constant permittivity (silicon and silicon dioxide), and derive the relationship between the scale length and the channel length satisfying the error range within 5%, compared with a numerical method. As a result, when the thickness of the oxide film is reduced to 1 nm, even in the case of L_g ＜ λ₁, the analytical subthreshold swing model proposed in this paper is observed to satisfy the error range of 5%. However, if the oxide thickness is increased to 3 nm and the channel thickness decreased to 6 nm, the analytical model can be used only for the channel length of L_g ＞ 1.8 λ₁.

Aluminum is a lightweight metal and has excellent properties with regard to conductivity, workability, and strength. It has been used in various industries owing to its economic benefits. To improve upon the mechanical properties and processability by adding various alloying elements to aluminum, improving the corrosion resistance and heat resistance by electrochemically forming a porous anodic film having a thickness and hardness on the surface of the aluminum alloy is crucial. In this study, the aluminum 6061 alloy was controlled by an anodization process in a 0.3M oxalic acid electrolyte at room temperature to investigate the oxide film parameters such as porosity and thickness depending on the modulating applied voltage and time. The anodizing experiment was performed by increasing the time from 1 h to 9 h at 2-h intervals at applied voltages of 50 V and 60 V.

We demonstrate the utilization of ion gel gate dielectrics for operating non-volatile transistor memory devices based on polymer semiconductor thin films. The gating process in typical electrolyte-gated polymer transistors occurs upon the penetration and escape of ionic components into the active channel layer, which dopes and dedopes the polymer film, respectively. Therefore, by controlling doping and dedoping processes, electrical current signals through the polymer film can be memorized and erased over a period of time, which constitutes the transistor-type memory devices. It was found that increasing the thickness of polymer films can enhance the memory performance of device including (i) the current signal ratio between its memorized state and erased state and (ii) the retention time of the signal.

A new information society of late has arrived by the rapid development of various information & communications technologies. Accordingly, mobile devices which are light and thin, easy and convenient to carry on the market. Also, the requirements for the larger television sets such as fast response speed, low-cost electric power, wider visual angle display are sufficiently satisfied. The currently most widely studied display material, the Organic Light-emitting Diodes(OLEDs) overwhelms the Liquid Crystal Display(LCD), the main occupier of the market. This new material features a response speed of more than a thousand times faster, no need of backlight, a low driving voltage, and no limit of view angle. And the OLEDs has high luminance efficiency and excellent durability and environment resistance, quite different from the inorganic LED light source. The OLEDs with simple device structure and easy produce can be manufactured in various shapes such as a point light source, a linear light source, a surface light source. This will surely dominate the market for the next generation lighting and display device. The new display utilizes not the glass substrate but the plastic one, resulting in the thin and flexible substrate that can be curved and flattened out as needed. In this paper, OLEDs device was produced by changing thickness of Teflon-AF of hole injection material layer. And as for the electrical properties, the four layer device of ITO/TPD/Alq3/BCP/LiF/Al and the five layer device of ITO/Teflon AF/TPD/Alq3/BCP/Lif/Al were studied experimentally.

In this study, we fabricated the indium gallium zinc oxide (IGZO), zinc oxide (ZnO), aluminum zincoxide (AZO). oxide and silver are deposited by magnetron sputtering and thermal evaporator, respectively transparency and energy band gap were changed by the thickness of silver layer. To fabricate metal oxide metal(OMO) structure, IGZO sputtered on a corning 1,737 glass substrate was used as bottom oxide material and then silver was evaporated on the IGZO layer, finally IGZO was sputtered on the silver layer we get the final OMO structure. The radio-frequency power of the target was fixed at 30 W. The chamber pressure was set to 6.0×10-3Torr, and the gas ratio of Ar was fixed at 25 sccm. The silver thickness are varied from 3 to 15 nm. The OMO thin films was analyzed using XRD. XRD shows broad peak which clearly indicates amorphous phase. ZnO, AZO,OMO show the peak [002] direction at 34°. This indicate that ZnO, AZO OMO structure show the crystalline peak. Average transmittance of visible region was over 75%, while that of infrared region was under 20%. Energy band gap of OMO layer was increased with increasing thickness of Ag layer. As a result total transmittance was decreased.

For the semiconductor device safety from over current in the digital electronic circuit systemmust be surely designed that it`s surface mount type micro fuse device. In this paper, We has analysedto the fusing character of micro fuse as a function changed thickness of thermosetting ink epoxy. To thechange of thermosetting ink epoxy thickness with in production lot, in the electrically character (fusingtest in the 2 multiple over current and 10 multiple over current, surface temperature test in the 1.25multiple over current) of micro fuse has been tested. According to the electrically character result,changed thickness of thermosetting ink epoxy in designed micro fuse withheld direct effect in both endresistance changes. Also, because high thermal energy in the micro fuse test of over current wasoccurred to effect such as thermal runaway and explosion. Therefore, screen printing process in thedesign of micro fuse using thermosetting ink epoxy is very important for production quality improvement.

In order to prevent heat loss that occurs through the glass, low-emissivity (Low-E) coating methods with good insulating properties and high transmittance were used. lnGaZnO/Ag/InGaZnO (IGZO/Ag/IGZO) multilaver thin films have been deposited on XG glass substrate by HF magnetron sputtering. Depending on the different thickness of Ag in multilayer films, the structural and optical properties of Low-E multilayer films were analyzed. By XRI) analysis results, the multilayer thin films were observed to be amorphous structure regardless of Ag thickness. According to the AFM results, surface morphology of the multilayer films was observed and compared. Using UV-VIS spectroscopy, low emissivity propertty has been observed clearly with the transmittance of higher than 85% at visible range and lower than 30 at ll range.

We developed a package of remote phosphor structure having blue LED chips and phosphors physically separated, and the characteristics were evaluated according to different classifications of phosphor coatings. Remote phosphor was produced by screen printing coating on glass substrate with phosphor content rated paste and heat treatment. After mounting Remote phosphor, which has been classified according to number of coatings, on top of blue LED chips, luminous flux, luminous efficacy, CCT and CRI were measured. The measurement results showed the most suitable characteristics of white LED package as a general light source when the content rate of phosphor in Remote phosphor was 80 wt.% with 3 layers of coatings and thickness over 12 μm.

Oxides possess several interesting properties, such as ferroelectricity, magnetism, superconductivity, and multiferroic behavior, which can effectively be used oxide electronics based on epitaxially grown heterostructures. The microscopic properties of oxide interfaces may have a strong impact on the electrical transport properties of these heterostructures. It was recently demonstrated that high electrical conductivity and mobility can be achieved in the system of an ultrathin LaAlO3 film deposited on a TiO2-terminated SrTiO3 substrate, which was a remarkable result because the conducting layer was at the interface between two insulators. In this study, we observe that the current-voltage characteristics exhibit LaAlO3 thickness dependence of electrical conductivity in TiO2-terminated SrTiO3. We find that the LaAlO3 layers with a thickness of up 3 unit cells, result in highly insulating interfaces, whereas those with thickness of 4 unit cells and above result in conducting interfaces.

We report on variations of electrical properties with different active layer thickness and post-annealing temperature in amorphous In-Ga-Zn-O (IGZO) thin-film transistors (TFTs). In particular, subthreshold swing (SS) of the IGZO-TFTs was improved as increasing the active layer thickness at an given post-annealing temperature, accompanying the negative shift in turn-off voltage. However, as increasing post-annealing temperature, only turn-off voltage was shifted negatively with almost constant SS value. The effect of the active layer thickness and post-annealing temperature on electrical properties, such as SS, field effect mobility and turn-off voltage in IGZO-TFTs has been explained in terms of the variation of trap density in IGZO channel layer and at gate dielectric/IGZO interface.

In this study, thickness vibration mode piezoelectric devices for AE sensor application were simulated using ATILA FEM program, and then fabricated. Trajectory resonant displacement and electro mechanical coupling factors of the piezoelectric devices were investigated. The simulation results showed that excellent displacement and electro mechanical coupling factor was obtained when the ratio of diameter/thickness(Ф/T) was 0.75. The piezoelectric device of Ф/T=0.75 exhibited the optimum values of fr=183 kHz, displacement=4.44×10(-7)[m], k33=0.69, which were suitable for the application of AE sensor piezoelectric device.

In this research, the electric characteristic of organic light-emitting diodes(OLEDs) was studied depending on thickness of amorphous fluoropolymer(Teflon-AF) which is the material of hole injection layer to improve electric characteristic of OLEDs. Sample composition was fabricated in double layer. The basic structure was fabricated by ITO/tris(8-hydroxyquinoline) aluminum (Alq3)/Al and the 2 layer was fabricated by ITO/2,2-Bistrifluoromethyl-4,5-Difluoro-1,3-Dioxole(Teflon-AF)/tris(8-hydro xyquinoline) aluminum (Alq3)/Al. The experiment was carried with variation of thickness of Teflon-AF at 1.0, 2.0, 2.5, 3.0 nm. The result showed when Teflon-AF thickness was 2.5 nm, the electric and optical characteristic were well performed. Moreover, when it was compared with Teflon-AF without materials, it was improved 15.1 times more on luminance, 12.7 times more on luminous efficiency and 12.1 times more on external quantum efficiency. Therefore, OLEDs element with optimum hole injection layer reduced energy barrier and driving voltage, and confirmed that it improved efficiency widely.

In this study, a method to measure the thickness of thin film by EDS (energy dispersive spectroscopy) is suggested. We have developed a model which calculates the thickness of thin film from the characteristic x-ray intensity ratio of the elements in thin film and substrate by considering incident electron beam energy, x-ray generation curve, backscattering and absorption of x-ray, take-off angle of x-ray and tilt angle of the sample. We obtained the relation curve between the film thickness measured experimentally and the x-ray intensity ratio of elements. The film thicknesses calculated from the model agrees quite well with those measured experimentally. Therefore, the thin film thickness can be measured rapidly and accurately by using the model developed in this study and the x-ray intensity ratio obtained in EDS analysis.

AZO (Al doped ZnO) thin films were deposited on the quartz substrates with thickness variation from 25 to 300 nm by using PLD (pulsed laser deposition). XRD (x-ray diffractometer), SPM (scanning probe microscopy), Hall effect measurement and uv-visible spectrophotometer were employed to investigate the structural, morphological, electrical and optical properties of the thin films. XRD results demonstrated that films were preferrentially oriented along the c-axis and crystallinity of film was improved with increase of film thickness. As for the surface morphologies, the mean diameter and root mean square of grains were increased as the film thickness was increased. When the film thickness was 200 nm, the lowest resistivity of 4.25×10-4 Ωcm obtained with carrier concentration of 6.84×1020 cm-3 and mobility of 21.4 cm2/V?S. All samples showed more than 80% of transmittance in the visible range. Upon these results, it is found that the samples thickness can affect their structural, morphological, optical and electrical properties. This study suggests that the resistivity can be improved by controlling film thickness.

A novel design of gas sensor using Ga-doped ZnO (GZO) thin films which are deposited on low temperature co-fired ceramic (LTCC) substrates is presented. The LTCC substrates with thickness of 400 μm are fabricated by laminating 12 green tapes which consist of alumina and glass particle in an organic binder. The GZO thin films with different thickness are deposited on LTCC substrates, by RF magnetron sputtering method. The microstructure and sensing properties of GZO gas sensing films are analyzed as a function of the film thickness. The films are well crystallized in the hexagonal (wurzite) structure with increasing thickness. The maximum sensitivity of 3.49 is obtained at 100 nm film thickness and the fastest 90% response time of 27.2 sec is obtained at 50 nm film thickness for the operating temperature of 400oC to the NO2 gas.