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"Slurry"

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"Slurry"

Optimization of Alumina Tape Casting Process for Building Big Data
Dong Ha Kim, Shi Yeon Kim, Joo Sung Lee, Dong-hun Yeo, Hyo-soon Shin, Sang-ok Yoon
J Korean Inst Electr Electron Mater Eng 2019;32(6):483-489.   Published online November 1, 2019
DOI: https://doi.org/10.4313/JKEM.2019.32.6.483
For machine learning techniques, a large amount of high-quality material property data should be accumulated. In this study, several data for an alumina tape casting process were produced with the variables of slurry viscosity, gap size, and coating speed. The alumina tapes were manufactured in the range of 1,000~6,000 cps for slurry viscosity, 300~1,000 ㎛ for gap size, and 0.5~2.0 m/min for coating speed. As a result, the lower the viscosity, coating speed, and gap size, the more pore-free tapes could be manufactured. The viscosity of the slurry limited the minimum thickness of the tape. Green sheets with high packing density were manufactured from the slurry of 100~6,000 cps slurry viscosity, coating speed of 0.5 m/min, and a 300~500 ㎛ gap size.
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Evaluation and Optimization of Dispersion in Slurry Preparation of Commercial LTCC Material
Hyeok Jung Kwon, Hyo Soon Shin, Dong Hun Yeo, Jong Hee Kim, Yong Su Cho
J Korean Inst Electr Electron Mater Eng 2008;21(4):341-347.   Published online April 1, 2008
DOI: https://doi.org/10.4313/JKEM.2008.21.4.341
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Polishing Properties by Change of Slurry Temperature in Oxide CMP
J Korean Inst Electr Electron Mater Eng 2005;18(3):219-225.   Published online March 1, 2005
DOI: https://doi.org/10.4313/JKEM.2005.18.3.219
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Planarization Characteristics of CMP for WO3 Film with an Addition of Oxidizers
J Korean Inst Electr Electron Mater Eng 2005;18(1):12-16.   Published online January 1, 2005
DOI: https://doi.org/10.4313/JKEM.2005.18.1.012
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Role of Oxidants for Metal CMP Applications
Yong Jin Seo, Sang Yong Kim, U Seon Lee
J Korean Inst Electr Electron Mater Eng 2004;17(4):378-383.   Published online April 1, 2004
DOI: https://doi.org/10.4313/JKEM.2004.17.4.378
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A Study on Semi Abrasive Free Slurry including Acid Colloidal Silica for Copper Chemical Mechanical Planarization
Nam Hun Kim, Sang Yong Kim, Yong Jin Seo, Tae Hyeong Kim, Ui Gu Jang
J Korean Inst Electr Electron Mater Eng 2004;17(3):272-277.   Published online March 1, 2004
DOI: https://doi.org/10.4313/JKEM.2004.17.3.272
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Effects of Oxidizer Additive on the Performance of Copper-Chemical Mechanical Polishing using Tungsten Slurry
U Seon Lee, Gwon U Choe, Yeong Sig Lee, Yeon Og Choe, Yong Taeg O, Yong Jin Seo
J Korean Inst Electr Electron Mater Eng 2004;17(2):156-161.   Published online February 1, 2004
DOI: https://doi.org/10.4313/JKEM.2004.17.2.156
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Aging Effects of Silica Slurry and Oxide CMP Characteristics
U Seon Lee, Pil Ju Go, Yeong Sig Lee, Yong Jin Seo, Gwang Jun Hong
J Korean Inst Electr Electron Mater Eng 2004;17(2):138-143.   Published online February 1, 2004
DOI: https://doi.org/10.4313/JKEM.2004.17.2.138
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Characteristics of 2-Step CMP (Chemical Mechanical Polishing) Process using Reused Slurry by Adding of Silica Abrasives
Yong Jin Seo, Gyeong Jin Lee, Un Sig Choe, Sang Yong Kim, Jin Seong Park, U Seon Lee
J Korean Inst Electr Electron Mater Eng 2003;16(9):759-764.   Published online September 1, 2003
DOI: https://doi.org/10.4313/JKEM.2003.16.9.759
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Chemical Mechanical Polishing Characteristics of Mixed Abrasive Slurry by Adding Of Alumina Abrasive in Diluted Silica Slurry
Yong Jin Seo, Chang Jun Park, Woon Shik Choi, Sang Yong Kim, Jin Sung Park, Woo Sun Lee
J Korean Inst Electr Electron Mater Eng 2003;16(6):465-470.   Published online June 1, 2003
DOI: https://doi.org/10.4313/JKEM.2003.16.6.465
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Application of Herd Porous Pad in Metal CMP Process
Sang Yong Kim, Nam Hoon Kim, In Pyo Kim, Eui Goo Chang
J Korean Inst Electr Electron Mater Eng 2003;16(5):385-389.   Published online May 1, 2003
DOI: https://doi.org/10.4313/JKEM.2003.16.5.385
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Effects of Mixed Oxidizer on the W-CMP Characteristics
Chang Jun Park, Yong Jin Seo, Sang Yong Kim, U Seon Lee
J Korean Inst Electr Electron Mater Eng 2003;16(12s):1181-1186.
DOI: https://doi.org/10.4313/JKEM.2003.16.12s.1181
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