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"SOI"

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"SOI"

Real-Time Soil Humidity Monitoring Based on Sensor Network Using IoT
Kyeong Heon Kim, Hee-dong Kim
J Electr Electron Mater 2022;35(5):459-465.   Published online September 1, 2022
DOI: https://doi.org/10.4313/JKEM.2022.35.5.6
This paper reports a method to use a wireless sensor network deployed in the field to real-time monitor soil moisture, warning when the moisture level reaches a specific value, and wirelessly controlling an additional device (LED or water supply system, etc.). In addition, we report all processes related to wireless irrigation system, including field deployment of sensors, real-time monitoring using a smartphone, data calibration, and control of additional devices deployed in the field by smartphone. A commercially available open-source Internet of Things (IoT) platform, NodeMCU, was used, which was combined with a 9V battery, LED and soil humidity sensor to be integrated into a portable prototype. The IoT-based soil humidity sensor prototype deployed in the field was installed next to a tree for on-site demonstration for the measurement of soil humidity in real-time for about 30 hours, and the measured data was successfully transmitted to a smartphone via Wifi. The measurement data were automatically transmitted via e-mail in the form of a text file, stored on the web, followed by analyses and calibrations. The user can check the humidity of the soil real-time through a personal smartphone. When the humidity of a soil reached a specific value, an additional device, an LED device, placed in the field was successfully controlled through the smartphone. This LED can be easily replaced by other electronic devices such as water supplies, which can also be controlled by smartphones. These results show that farmers can not only monitor the condition of the field real-time through a sensor monitoring system manufactured simply at a low cost but also control additional devices such as irrigation facilities from a distance, thereby reducing unnecessary energy consumption and helping improve agricultural productivity.
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Light-Emission Characteristics of Organic Light-Emitting Diodes Driven by Alternating Current
Ow-tae Kwon, Tae-wan Kim
J Electr Electron Mater 2016;29(10):625-629.   Published online October 1, 2016
Electrical and optical properties of the AC voltage driven organic light-emitting diodes were investigated by measuring the electroluminescence of the device. Device structure of ITO(170 nm)/TPD(40 nm)/Alq3(60 nm)/LiF(0.5 nm)/Al(100 nm) was manufactured using a thermal evaporation. Sinusoidal and square-type AC voltage was applied to the device using a function generator. Amplitude of the applied voltage was 9.0 V, and a frequency was varied from 50 Hz to 50 kHz. Electroluminescence out of the device was measured in a Si photodetector simultaneously with the applied voltage together. An intensity and a delayed residual luminescence from the device were depended on the frequency of the sinusoidal voltage. It is thought to be due to a contribution of the capacitive nature in the equivalent circuit of the device. An electron mobility was estimated using a time constant obtained from the luminescence of the device driven by the square-type AC voltage.
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Carrier Lifetime Analysis of Proton Irradiated SOI Wafer with Pseudo MOSFET Technology
Sung Hoon Jung, Yong Hyun Lee, Jae Sung Lee, Young Kyu Kwon, Young Ho Bae
J Electr Electron Mater 2009;22(9):732-736.   Published online September 1, 2009
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High Mobility Characteristics of Strained-Si-on-insulator (sSOI) Metal-oxide-semiconductors Field-effect-transistors (MOSFETs)
Kwan Su Kim, Won Ju Cho
J Electr Electron Mater 2008;21(8):695-698.   Published online August 1, 2008
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A Study on High Temperature Operation of SOI-MOSFET
Chang Yong Choi, Kyung Sook Moon, Sang Mo Koo
J Electr Electron Mater 2008;21(8):706-710.   Published online August 1, 2008
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Comparison of Electrical Characteristics of SiGe pMOSFETs Formed on Bulk-Si and PD-SOI
J Electr Electron Mater 2007;20(6):491-495.   Published online June 1, 2007
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Thermal Stability Improvement of Ni-Silicide on the SOI Substrate Doped B11 for Nano-scale CMOSFET
J Electr Electron Mater 2006;19(11):1000-1004.   Published online November 1, 2006
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Study on the Electrical Characteristics of the Multi-RESURF SOI LDMOSFET as a Function of Epi-Layer Concentration
J Electr Electron Mater 2006;19(9):813-817.   Published online September 1, 2006
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Electrical Characterization of Nano SOI Wafer by Pseudo MOSFET
J Electr Electron Mater 2005;18(12):1075-1079.   Published online December 1, 2005
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Direct Bonding of Heterogeneous Insulator Silicon Pairs using Various Annealing Method
O Seong Song, Gi Yeong Lee
J Electr Electron Mater 2003;16(10):859-864.   Published online October 1, 2003
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Bonding Property of Silicon Wafer Pairs with Annealing Method
Hong Seok Min, Sang Hyun Lee, Oh Sung Song, Young Chang Joo
J Electr Electron Mater 2003;16(5):365-371.   Published online May 1, 2003
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Single Crystal Silicon Thin Film Transistor using SOI Wafer for the Switching Device of Top Emission Type AMOLEDs
Jae Won Chang, Hoon Kim, Kyeong Sik Shin, Jai Kyeong Kim, Byeong Kwon Ju
J Electr Electron Mater 2003;16(4):292-297.   Published online April 1, 2003
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Monolithic Film Bulk Acoustic Wave Resonator using SOI Wafer
In Tae Kim, Yun Kwon Park, Si Hyung Lee, Yun Hi Lee, Jeon Kook Lee, Nam Soo Kim, Byeong Kwon Ju
J Electr Electron Mater 2002;15(12):1039-1044.   Published online December 1, 2002
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Development of Trenched SOI 1×2 Thermo-Optic Switch For Improvement of Thermal Diffusion Effect
Jong Dae Park, Dong Su Seo, Gi Su Lee
J Electr Electron Mater 2003;16(12s):1255-1260.
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