Various process modifications have been used to minimize SiO₂ gate oxide aging in metal-oxide-semiconductor field-effect transistors (MOSFETs). In particular, post-metallization annealing (PMA) with a deuterium ambient can effectively eliminate both bulk traps and interface traps in the gate oxide. However, even with the use of PMA, it remains difficult to prevent high levels of radiation-induced gate oxide damage such as total ionizing dose (TID) during long-term missions. In this context, additional low-temperature heat treatment (LTHT) is proposed to recover from radiation-induced damage. Positive traps in the damaged gate oxide can be neutralized using LTHT, thereby prolonging device reliability in harsh radioactive environments.

The electrical characteristics of single-crystal composite superconductors produced by a melting process were studied by neutron irradiation. In order to improve the current characteristics of the YBa₂Cu₃O_7-y superconductor, it is necessary to form an effective flux pinning center inside the superconductor. In this study, an increase in flux pinning was attempted through neutron irradiation onto YBa₂Cu₃O_7-y superconductors. The neutron irradiation was performed at 30 MeV for 500 sec, The electrical properties of the superconductors were measured in a magnetic field of 5 Tesla at 50 K using a magnetic properties measurement system (MPMS). After neutron irradiation, the critical current density of the YBa₂Cu₃O_7-y superconductor in a 1 Tesla magnetic field was 1×10⁵ A/㎠. Once neutrons were irradiated at 30 MeV and 10 μA for 500 sec, the critical current density was observed to increase significantly. When neutrons are irradiated to a superconductor, micro-defects are created in the superconductor, and they act as flux pinning centers that hold the magnetic field generated when an electric current flows.

Wrinkle patterns were fabricated on styrene-butadiene-styrene (SBS) block copolymer substrates using ion-beam (IB) irradiation with various intensities. The wavelength of the wrinkle pattern increased as the IB intensity was increased from 800 to 1,600 eV. IB irradiation-induced changes in the surface properties that were confirmed via physicochemical surface analyses. X-ray photoelectron spectroscopy analysis revealed chemical surface reformation due to the IB irradiation, resulting in C-O/C=O bonds after IB irradiation that were not reported before. These results indicate that the surface chemical modification caused by IB irradiation is strongly related to the surface modulus, which is important when fabricating wrinkle patterns. Furthermore, a strong IB irradiation induced a strong compressive strain; thus the size of the wrinkle pattern was increased.

In order to fabricate high-quality SiC substrates for power electronic devices, various single crystal growing methods were prepared. These include the physical vapor transport (PVT) and top seeded solution growth (TSSG) methods. All the suggested SiC growth methods generally use induction-heating furnaces. The temperature distribution in this system can be easily adjusted by changing the hot-zone design. Moreover, precise temperature control in the induction-heating furnace is favorably required to grow a high-quality crystal. Therefore, in this study, we analyzed the heat transfer in these furnaces to grow SiC crystals. As the growth temperature of SiC crystals is very high, we evaluated the effect of radiation heat transfer on the temperature distribution in induction-heating furnaces. Based on our simulation results, a heat transfer strategy that controls the radiation heat transfer was suggested to obtain the optimal temperature distribution in the PVT and TSSG methods.

The alignment characteristics of liquid crystal (LC) molecules on a solution-derived lanthanum zinc oxide (LZO) film under ion-beam irradiation were demonstrated. Using the solution process, an LZO film was fabricated on the glass substrate and cured at 100℃. Afterwards, ion-beam irradiation was performed following the LC alignment method. Using this film, an LC cell was fabricated and the characteristics of the LC alignment were verified. Cross polarizing microscopy and the crystal rotation method were used to investigate the alignment state of the LC molecules on the LZO films. Furthermore, field emission scanning electron microscopy and X-ray photoelectron spectroscopy were used to explore the effect of the ion-beam irradiation on the LZO film. Through these, it was confirmed that the ion-beam irradiation induced surface modification, which demonstrated anisotropic physical and chemical surface characteristics. Due to this, uniform LC alignment was achieved. Finally, the residual DC and anchoring energy of the LC cell based on the LZO films were measured using a capacitance-voltage curve.

We investigated a solution-derived Y₂O₃ film treated by ion beam (IB) irradiation as a liquid crystal (LC) alignment layer. With IB irradiation, homogeneous LC alignment was achieved irrespective of the annealing temperature. To verify the effect of IB irradiation, we conducted surface analyses such as X-ray photoelectron spectroscopy (XPS) and scanning electron microscopy (SEM). As Y₂O₃ is a high-k material, the electro-optical properties of the twisted nematic (TN) cells were superior to those of conventional TN cells based on a rubbed polymer, with an LC rising time of 4.1ms and falling time of 2.9ms. The IB-irradiated Y₂O₃ is a good alternative as an alignment layer for fast-switching TN LC displays.

In this work, we have investigated the effect of a 30-min thermal anneal at 550℃ on the electrical characteristics of neutron-irradiated 4H-SiC MOSFETs. Thermal annealing can recover the on/off characteristics of neutron-irradiated 4H-SiC MOSFETs. After thermal annealing, the interface-trap density decreased and the effective mobility increased in terms of the on-characteristics. This finding could be due to the improvement of the interfacial state from thermal annealing and the reduction in Coulomb scattering due to the reduction in interface traps. Additionally, in terms of the off-characteristics, the thermal annealing resulted in the recovery of the breakdown voltage and leakage current. After the thermal annealing, the number of positive trapped charges at the MOSFET interface was decreased.

In this work, in order to effectively improve the electrical conductivity and visible light transmittance of ZnO thin films, ZnO single layer and ZnO/Ag bi-layer films were deposited on glass substrates by radio frequency and direct current magnetron sputtering, and then, the effects of an Ag buffer layer and electron beam irradiation on the electrical and optical properties of the films were investigated. The observed results indicate that ZnO 100 nm / Ag 7 nm films show higher opto-electrical performance than the ZnO single layer film. In addition, electron beam irradiation also effectively enhanced the visible transmittance and electrical conductivity of the ZnO/Ag bi-layer films.

In this study, 20.8% of a p-type Si bifacial solar cell was used to develop a photovoltaic (PV) module to obtain the maximum power under a limited installation area. The transparent back sheet material was replaced during fabrication with a white one, which is opaque in commercial products. This is very beneficial for the generation of more electricity, owing to the additional power generation via absorption of light from the rear side. A new model is suggested herein to predict the power of the bifacial PV module by considering the backside reflections from the roof and/or environment. This model considers not only the frontside reflection, but also the nonuniformity of the backside light sources. Theoretical predictions were compared to experimental data to prove the validity of this model, the error range for which ranged from 0.32% to 8.49%. Especially, under 700 W/m2, the error rate was as low as 2.25%. This work could provide theoretical and experimental bases for application to a distributed and microgrid network.

In this study, we designed the temperature coefficient of resistance (TCR) and heat radiation properties of shunt fixed resistors by adjusting the atomic composition of a metal alloy resistor, and fabricated a resistor that satisfied the designed properties. Resistors with similar atomic composition of copper and nickel showed low TCR and excellent shunt fixed resistor properties such as short-time overload, rated load, humidity load, and high temperature load. Finally, we expect that improved sensor accuracy will be obtained in current-distribution-type shunt fixed resistor for IoT sensors by designing the atomic composition of the metal alloy resistor proposed in this work.

This study analyzed the change of electrical characteristics of a photocoupler when a narrow-band electromagnetic wave was combined with the photocoupler. A magnetron (3 kW, 2.45 GHz) was used as the narrow-band electromagnetic source. The EUT was Photocoupler (6N139) and the input signal was divided into two types: a square pulse and the second signal is 0 V. The malfunction of the photocoupler was confirmed by monitoring the variation in the output voltage of the photocoupler. As a result of the experiment, changes in the malfunctioning was observed as the electric field was increased. There are three types of malfunction modes: delay, output voltage off, and fluctuation. Bit errors were analyzed to verify the electrical characteristics of the photocoupler by narrow-band electromagnetic waves. The result of this study can be used as basic data for the effect analysis of photocoupler protection and impact analysis of high-power electromagnetic waves.

This study analyzed the Vulnerability of Network Communication devices when IEMI is coupled with the Network System. An Ultra Wide Band Generator (180 kV, 700 MHz) was used as the IEMI source. The EUTs are the Switch Hub and Workstation, which are used to configure the network system. The network system was monitored through the LAN system configuration, to confirm a malfunction of the network device. The results of the experiment indicate that a malfunction of the network occurs as the electric field increases. The data loss rate increases proportionally with increasing radiating time. In the case of the Switch Hub, the threshold electric field value was 10 kV/m for all conditions used in this experiment. The threshold point causing malfunction was influenced only by the electric field value. The correlation between the threshold point and pulse repetition rate was not found. However, in case of the Workstation, it was found that as the pulse repetition rate increases, the equipment responds weakly and the threshold value decreases. To verify the electrical coupling of the EUT by IEMI, current sensors were used to measure the PCB line inside the EUT and network line coupling current. As a result of the measurement, it can be inferred that when the coupling current due to IEMI exceeds the threshold value, it flows through the internal equipment line, causing a malfunction and subsequent failure. The results of this study can be applied to basic data for equipment protection, and effect analysis of intentional electromagnetic interference.

The changes in the electrical characteristics of CMOS ICs due to coupling with a narrow-band electromagnetic wave were analyzed in this study. A magnetron (3 kW, 2.45 GHz) was used as the narrow-band electromagnetic source. The DUT was a CMOS logic IC and the gate output was in the ON state. The malfunction of the ICs was confirmed by monitoring the variation of the gate output voltage. It was observed that malfunction (self-reset) and destruction of the ICs occurred as the electric field increased. To confirm the variation of electrical characteristics of the ICs due to the narrow-band electromagnetic wave, the pin-to-pin resistances (Vcc-GND, Vcc-Input1, Input1-GND) and input capacitance of the ICs were measured. The pin-to-pin resistances and input capacitance of the ICs before exposure to the narrow-band electromagnetic waves were 8.57 MΩ (Vcc-GND), 14.14 MΩ (Vcc-Input1), 18.24 MΩ (Input1-GND), and 5 pF (input capacitance). The ICs exposed to narrow-band electromagnetic waves showed mostly similar values, but some error values were observed, such as 2.5 Ω, 50 MΩ, or 71 pF. This is attributed to the breakdown of the pn junction when latch-up in CMOS occurred. In order to confirm surface damage of the ICs, the epoxy molding compound was removed and then studied with an optical microscope. In general, there was severe deterioration in the PCB trace. It is considered that the current density of the trace increased due to the electromagnetic wave, resulting in the deterioration of the trace. The results of this study can be applied as basic data for the analysis of the effect of narrow-band high-power electromagnetic waves on ICs.

The effect of low temperature (250℃) heat treatment after electron irradiation (irradiation time = 30, 180, 300s) on the chemical bonding and electrical properties of ZnO thin films prepared using a sol-gel process were examined. XPS (X-ray photoelectron spectroscopy) analysis showed that the electron beam irradiation decreased the concentration of M-O bonding and increased the OH bonding. As a result of the electron beam irradiation, the carrier concentration of ZnO films increased. The on/off ratio was maintained at ~10⁵ and the VTH values shifted negatively from 11 to 1 V. As the irradiation time increased from 0 to 300s, the calculated S. S. (subthreshold swing) of ZnO TFTs increased from 1.03 to 3.69 V/decade. These values are superior when compared the sample heat-treated at 400℃ representing on/off ratio of ~10² and S. S. value of 10.40 V/decade.

This study examined the malfunction mode of the HCMOS IC under narrow-band high-power electromagnetic wave. Magnetron is used to a narrow-band electromagnetic source. MFR (malfunction failure rate) was measured to investigate the HCMOS IC. In addition, we measured the resistance between specific pins of ICs, which are exposed and not exposed to the electromagnetic wave, respectively. As a test result of measurement, malfunction mode is shown in three steps. Flicker mode causing a flicker in LED connected to output pin of IC is dominant in more than 7.96 kV/m electric field. Self-reset mode causing a voltage drop to the input and output of IC during electromagnetic wave radiation is dominant in more than 9.1 kV/m electric field. Power-reset mode making a IC remained malfunction after electromagnetic radiation is dominant in more than 20.89 kV/m. As a measurement result of pin-to-pin resistance of IC, the differences between IC exposed to electromagnetic wave and normal IC were minor. However, the five in two hundred IC show a relatively low resistance. This is considered to be the result of the breakdown of pn junction when latch-up in CMOS occurred. Based on the results, the susceptibility of HCMOS IC can be applied to a basic database to IC protection and impact analysis of narrow-band high-power electromagnetic waves.

This paper is designed to find out where power reaches the highest point as the load of solar cells varies. In addition, the current and power were measured when irradiation changes, and the correlation between current and power was investigated. On top of that, experiments were conducted with the light volume kept constant and with the incoming light angle changing in order to figure out the incoming light angle that produces the most power and to conduct analyses. It was ascertained that if the load increases, the current decreases and the voltage increases. Since the power of 0.9828[W] was the highest when measurements were done, it can be said that when a load of 30[%] is applied to the solar cells, they are the most efficient.

This paper conducted a study on how the heat radiation of light emitting diode (LEI)) luminaires affects the indoor temperature increase. The effect was compared with that of a 20 W compact fluorescent lamp (CFL) and a 50 W MuG halogen lamp which are most widely used inside of cruises, a LED downlight and a 4W MRI6 LED replacing each of them. We installed a luminarie inside a thermally shielded chamber, measuring the temperature changes under the same volume every 5 minutes and compared the result with theoretically calculated heat radiation, The temperature changes in the chamber was measured four times, on seven hours` period in order to keep sufficient time once the temperature reaches the thermal equilibrium state. The results showed that the temperature of the 20 W E26 CFL and the 10 W LED downlight increased by 21,1`C and 10.4t respectively, while that of the 50 W halogen MRI6 and the 4 W LED MR16 increased by 33.9t and 4.8t respectively. The experimental heat radiation were calculated from the results and the experimental heat radiation of the CFL and the LED downlight were 171.5 cal and 86.5 cal, and those of the halogen MR16 and the LED MR16 were 275.3 cal and 36.5 cal, Therefore, the heat radiation was reduced by 49.5% and 86.7%, respectively, by replacing conventional light source with LED. In conclusion, we can expect a reduction of power consumption in air condition system and the effect on indoor temperature increase by application of LED luminaires.