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"Poly 3C-SiC"

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"Poly 3C-SiC"

Characteristics of Surface Micromachined Capacitive Pressure Sensors for High Temperature Applications
Jeong Hwan Seo, Sang Soo Noh, Kwang Ho Kim
J Korean Inst Electr Electron Mater Eng 2010;23(4):317-322.   Published online April 1, 2010
DOI: https://doi.org/10.4313/JKEM.2010.23.4.317
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Mechanical Properties of in-situ Doped Polycrystalline 3C-SiC Thin Films by APCVD
Kang San Kim, Gwiy Sang Chung
J Korean Inst Electr Electron Mater Eng 2009;22(3):235-238.   Published online March 1, 2009
DOI: https://doi.org/10.4313/JKEM.2009.22.3.235

Citations

Citations to this article as recorded by  
  • High Electrical Conductivity and High Hardness in Cubic Silicon Carbide Single Crystals
    Yunfan Yang, Zhaolong Liu, Guobin Wang, Da Sheng, Yehua Huang, Hui Li, Xu Chen, Huiyang Gou, Wenjun Wang, Zesheng Zhang, Junwei Yang, Xiaolong Chen
    Crystal Growth & Design.2026; 26(1): 678.     CrossRef
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Raman Scattering Characteristics on 3C-SiC Thin Films Deposited by APCVD Method
J Korean Inst Electr Electron Mater Eng 2007;20(7):606-610.   Published online July 1, 2007
DOI: https://doi.org/10.4313/JKEM.2007.20.7.606
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Growth of Polycrystalline 3C-SiC Thin Films using HMDS Single Precursor
J Korean Inst Electr Electron Mater Eng 2007;20(2):156-161.   Published online February 1, 2007
DOI: https://doi.org/10.4313/JKEM.2007.20.2.156
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