We proposed the ZnO thin film for a SAW filter by PLD and RF sputtering method. ZnO thin films was pre-deposited on a sapphire substrate as a seed layer by PLD method and then deposited on seed layer by RF sputtering. The surface characteristics of ZnO thin film were investigated by XRD, SEM and AFM. The minimum surface roughness was 1.92 nm and FWHM of rocking curve was 0.92°. We demonstrated the SAW filter with bandwidth of approximately 0.97 ㎒ and the center frequency of 18.72 ㎒ using the proposed ZnO thin film.

Transparent conducting oxides (TCOs) have wide range of application areas in transparent electrode for display devices, Transparent coating for solar energy heat mirrors, and electromagnetic wave shield. SnO2 is intrinsically an n-type semiconductor due to oxygen deficiencies and has a high energy-band gap more than 3.5eV. It is known as a transparent conducting oxide because of its low resistivity of 10-3Ωcm and high transmittance over 90% in visible region. In this study, co-doping effects of Al and Y on the properties of SnO2 were investigated. The addition of Y in SnO2 was tried to create oxygen vacancies that increase the diffusivity of oxygen ions for the densification of SnO2. The addition of Al was expected to increase the electron concentration. Once, we observed solubility limit of SnO2 single-doped with Al and Y. {(x/2) Al2O3+(x/2) Y2O3}-SnO2 was used for the source of Al and Y to prevent the evaporation of Al2O3 and for the charge compensation. And we observed the valence changes of aluminium oxide because generally reported of valence changes of aluminium oxide in Tin - Aluminium binary system. The electrical properties, solubility limit, densification and microstructure of SnO2 co-doped with Al and Y will be discussed.

Graphene was fabricated onto Ni/Si substrate using a rapid-thermal pulse CVD and they were transferred onto the Ti/PES flexible substrate. For top electrode applications of the BMNO dielectric films, graphene was patterned using a argon plasma. Through an AFM image and a leakage current density of the BMNO films grown onto various bottom electrodes before and after bending test, BMNO films grown onto the graphene bottom electrode showed no change of the microstructure and the leakage current density after the bend.

The characteristics of Ga-doped zinc oxide (GZO) thin films deposited at different deposition temperatures (TS∼250 to 550℃) on 4H-SiC have been investigated. Structural and electrical properties of GZO thin film on n-type 4H-SiC(0001) were investigated by using x-ray diffraction(XRD), atomic force microscopy(AFM), Hall effect measurement, barrier height from I-V curve and Auger electron spectroscopy(AES). XRD 2 θ scan shows GZO thin film has preferential orientation with c-axis perpendicular to SiC substrate surface. The lowest resistivity (∼1.9×10-4 Ωcm) was observed for the GZO thin film deposited at 400℃. As deposition temperature increases, barrier height between GZO and SiC was increased. Whereas, resistivity of GZO thin films as well as barrier height between GZO and SiC were increased after annealing process in air atmosphere. It has been found that the c-axis oriented crystalline quality as well as the relative amount of activated Ga3+ ions and oxygen vacancy may affect the electrical properties of GZO films on SiC.

AZO (Al doped ZnO) thin films were deposited on the quartz substrates with thickness variation from 25 to 300 nm by using PLD (pulsed laser deposition). XRD (x-ray diffractometer), SPM (scanning probe microscopy), Hall effect measurement and uv-visible spectrophotometer were employed to investigate the structural, morphological, electrical and optical properties of the thin films. XRD results demonstrated that films were preferrentially oriented along the c-axis and crystallinity of film was improved with increase of film thickness. As for the surface morphologies, the mean diameter and root mean square of grains were increased as the film thickness was increased. When the film thickness was 200 nm, the lowest resistivity of 4.25×10-4 Ωcm obtained with carrier concentration of 6.84×1020 cm-3 and mobility of 21.4 cm2/V?S. All samples showed more than 80% of transmittance in the visible range. Upon these results, it is found that the samples thickness can affect their structural, morphological, optical and electrical properties. This study suggests that the resistivity can be improved by controlling film thickness.

The semiconducting material of ZnO in II-VI group was well known as its good application for photo electronics, chemical sensors and field effect transistors due to the remarkable optical properties with wide energy band gap and great ionic reactivities. Up to now the growth of a good quality of ZnO film has been issued for better performances. Even though there were many deposition methods for making ZnO films, pulse laser deposition methods have been preferred for high crystalline films. In this report, the ZnO film was also created by pulsed laser deposition technique which also showed high crystalinity. By controlling several factors when deposited, it was investigated that the optimal condition for ZnO film formation. Mainly, oxygen partial pressures and growth temperatures were changed when ZnO films were synthesized and followed the characterization by HRXRD and AFM.