Piezoelectric materials, which convert mechanical energy into electrical signals, are widely used in various industrial applications such as sensors, actuators, and energy harvesting devices. This study aims to enhance the performance of Pb(Mg1/3Nb2/3)O3-Pb(Al1/2Nb1/2)O3-Pb(Zr0.52Ti0.48)O₃ (PMN-PAN-PZT) piezoelectric ceramics by investigating the effects of varying PAN and PMN content and adding Nb₂O₅ on their piezoelectric properties. The results show that with 2 mol% of PMN and PAN, the morphotropic phase boundary (MPB) region exhibits the highest piezoelectric properties. Additionally, excess Nb₂O₅ positively influenced the piezoelectric properties, maximizing electro-mechanical coupling factor (kp=63%, d33=440 pC/N). These findings contribute to developing next-generation high-performance piezoelectric materials, with potential for improved efficiency and performance in various industries.
Precise control over the morphology of nanostructures is critical for tailoring their physical and chemical properties. This study addresses the challenge of developing a simple, integrated method for synthesizing both 1D and 2D colloidal Cu nanostructures in a single system, achieving successful tuning of their localized surface plasmon resonance (LSPR) properties. A facile hydrothermal synthesis utilizing potassium iodide (KI) and hexadecylamine (HDA) is presented for controlling Cu nanostructure morphologies. The key to achieving 1D nanowires (NWs) and 2D nanoplates (NPs) depends on the controlled adsorption of HDA molecules and iodide (I-) ions on specific crystal facets. Depending on the morphologies, the resultant Cu nanostructures exhibit tunable LSPR peaks from 558 nm [nanoplates (NPs)] to 590 nm [nanowires (NWs)]. These results pave the way for the scalable and cost-effective production of plasmonic Cu nanostructures with tunable optical properties, holding promise for applications in sensing, catalysis, and photonic devices.
Citations
Citations to this article as recorded by
Complexation-controlled Cu@Ag core-shell flakes for thermally stable printed electrodes in flexible energy-storage capacitors Seokhwan Kim, Geumseong Lee, Ye Chan Lee, Je-Hui Koo, Seonhwa Park, Geon-Tae Hwang, Mahesh Peddigari, Jungho Ryu, Dahye Shin, Kyoung Jin Jung, Kwi-Il Park, Yuho Min Chemical Engineering Journal.2026; 540: 177341. CrossRef
The templated grain growth (TGG) method has gained significant attention for its ability to produce highly textured piezoelectric ceramics with significantly enhanced performance, making it a promising method for transducer and actuator applications. However, the texturing process using the TGG method requires the optimization of multiple steps, which can be challenging for beginners in this field. Therefore, in this tutorial, we provide an overview of the TGG method mainly based on our previous published works, including its various processing steps such as synthesizing anisotropic-shaped templates with size and size distribution control using the molten salt synthesis technique, tape casting, and identifying key factors for proper alignment of the templates in the target matrix system. Our goal is to provide a resource that can serve as a basic reference for researchers and engineers looking to improve their understanding and utilization of the TGG method for producing textured piezoelectric ceramics.
Ferroelectric material properties are strongly governed by domain structures and their evolution processes, but the evolution processes of complex domain patterns during a macroscopic electrical poling process are still elusive. In the present work, domain-evolution processes in a PZT ceramic near the morphotropic phase-boundary composition were studied during a step-wise electrical poling using piezoresponse force microscopy (PFM). Electron backscatter diffraction was used with the PFM data to identify the grain boundaries in the region of interest. In response to an externally the applied electric field, growth and retreat of non-180° domain boundaries wasere observed. The results indicate that ferroelectric polarization-switching nucleates and evolves in concordance with the pattern of the pre-existing domains.
In this work, we conducted a study on cell strings of high efficiency and high power solar cell modules via simulation. In contrast to the conventional module manufacturing method, the simulation was performed by connecting cutting cells divided into four parts from 6-in size using the electrically conductive adhesive (ECA). The resistance of the ECA added in series connection was extracted using an experimental method. This resistance was found to be 3 mΩ. Based on this simulation, we verified the change in efficiency of the string as a function of the number of cutting cell connections. Consequently, the cutting cell efficiency of the first 20.08% was significantly increased to 20.63% until the fifth connection; however, for further connections, it was confirmed that the efficiency was saturated to 20.8%. Connecting cutting cells using ECA improves the efficiency of the string; therefore, it is expected that it will be possible to fabricate modules with high efficiency and high power.
The changes in the electrical characteristics of CMOS ICs due to coupling with a narrow-band electromagnetic wave were analyzed in this study. A magnetron (3 kW, 2.45 GHz) was used as the narrow-band electromagnetic source. The DUT was a CMOS logic IC and the gate output was in the ON state. The malfunction of the ICs was confirmed by monitoring the variation of the gate output voltage. It was observed that malfunction (self-reset) and destruction of the ICs occurred as the electric field increased. To confirm the variation of electrical characteristics of the ICs due to the narrow-band electromagnetic wave, the pin-to-pin resistances (Vcc-GND, Vcc-Input1, Input1-GND) and input capacitance of the ICs were measured. The pin-to-pin resistances and input capacitance of the ICs before exposure to the narrow-band electromagnetic waves were 8.57 MΩ (Vcc-GND), 14.14 MΩ (Vcc-Input1), 18.24 MΩ (Input1-GND), and 5 pF (input capacitance). The ICs exposed to narrow-band electromagnetic waves showed mostly similar values, but some error values were observed, such as 2.5 Ω, 50 MΩ, or 71 pF. This is attributed to the breakdown of the pn junction when latch-up in CMOS occurred. In order to confirm surface damage of the ICs, the epoxy molding compound was removed and then studied with an optical microscope. In general, there was severe deterioration in the PCB trace. It is considered that the current density of the trace increased due to the electromagnetic wave, resulting in the deterioration of the trace. The results of this study can be applied as basic data for the analysis of the effect of narrow-band high-power electromagnetic waves on ICs.
A novel heteroleptic ruthenium(II) complex bearing a 4-picolinic acid unit as anchoring ligands (trans-dithiocyanato bis(4-picolinic acid)ruthenium(II) (trans-H1)) was synthesized and its chemical structure was identified by 1H-NMR, FT-IR and mass spectroscopy. The optical, thermal, electrochemical and dye adsorption properties of trans-H1 dye were investigated and compared with those of the gold standard ruthenium complex, Ru(4,4``-dicarboxy-2,2``-bipyridine)2cis(NCS)2 (N3). DSSCs based on trans-H1 dyes were examined under the illumination of AM 1.5 G, 100 mWcm-2 and exhibited typical photovoltaic properties with an open-circuit voltage (VOC) of 0.46 V, a short-circuit current (JSC) of 4.10 mA·cm-2, a fill factor (FF) of 60.4%, and a conversion efficiency (PCE) of 1.14%.
This paper presents an electrical feature analysis of hysteresis curves in memristor differential and intergral control circuit. After making macro model of the memristor device, electric characteristics of the model such as time analysis, frequency dependent DC I-V curves were performed by PSPICE simulation. Also, we made a circuit of memristor-capacitor based on nano-wired memristor device and analyzed the simulated PSPICE results. Finally, we proposed a memristor based differential or integral control circuit, analyzed hysteresis curve characteristic in the control circuit.
Citations
Citations to this article as recorded by
The Importance of Rural Tourism in the Context of Sustainable Urban Development and Its Impact on Rural Development: The Case of Foça Kozbeyli Hayriye Oya SAF Kent Akademisi.2022; 15(4): 1835. CrossRef
In this paper, we propose a numerical method to model temperature dependent threshold voltage shift observed in metal oxide thin-film transistors (TFTs). The proposed model is then implemented in AIM-SPICE circuit simulation tool. The proposed method consists of modeling the well-known stretched-exponential time dependent threshold voltage shift and their temperature dependent coefficients. The outputs from AIM-SPICE tool and the stretched-exponential model at different temperatures in the literature are compared and they show a good agreement. Since metal oxide TFTs are the promising candidate for flat panel displays, the proposed method will be a good stepping stone to help enhance reliability of fast-evolving display circuits.
We propose an analysis method of an autostereoscopic display system with lenticular lens array using finite ray-tracing method that is verified by the geometrical optics. In the present work, we adopt the cylinder equation for the mathematical expression of the lenticular lens. For the calculation of the direction cosine of the transmitted ray, we first calculate the refracting point at bottom of the lens and the direction cosine of the incident ray that propagating through the lens by the Snell`s law, and then apply to finite ray-tracing method. Finally, we obtain the simulation results for the intensity distribution of the ray at optimal viewing distance. From these results, we confirm the realization of 3D image that exists separately according to the viewing position at an optimal viewing distance.
We have investigated the optical properties of plamonic waveguide with tapered structure based on InP material for photonic integrated circuit(PIC). The proposed plasmonic waveguide is covered with the Ag thin film to generate the plasmonic wave on metallic interface. The optical characteristics of plasmonic waveguide were calculated using the three-dimensional finite-difference time-domain method. The plasmonic waveguide was fabricated with the lengths of 2 to 10 μm and the widths of 400 to 700 nm, respectively. The plasmonic mode and optical loss were measured. The optimum plasmonic length is 10 μm and widths are 600 and 700 nm in the fabricated waveguide. This plasmonic waveguide can be directly integrated with other conventional optical devices and can be essential building blocks of PIC.
Threshold voltage shift caused by trapping and release of charge carriers in a thin-film transistor (TF1`) is implemented in AIM-SPICE tool. Turning on and off voltages are alternatively applied to a TFT to extract charge trapping and releasing process. Each process is divided into sequentially ordered processes, which are numerically modeled and implemented in a computer language. The results show a good agreement with the experimental data, which are modeled. Since the proposed method is independent of TFT`s behavior models implemented in SPICE tools, it can be easily added to them.
Citations
Citations to this article as recorded by
Modeling of stretched-exponential and stretched-hyperbola time dependence of threshold voltage shift in thin-film transistors Taeho Jung Journal of Applied Physics.2015;[Epub] CrossRef
In this paper, we designed a charge pump circuit using level shifter for LED driver IC. The designed circuit makes the 15 V output voltage from the 5 V input in condition of 50 kHz switching frequency. The prototype chip which include the proposed charge pump circuit and its several internal sub-blocks such as oscillator, level shifter was fabricated using a 0.35 um 20 V BCD process technology. The size of the fabricated prototype chip is 2,350 um × 2,350 um. We examined performances of the fabricated chip and compared its measured results with SPICE simulation data.
From UV irradiation, we achieved homeotropic liquid crystal alignment on blended photo-polymer layer which is composed of polyvinyl-cinnamate (PVCi) and homeotropic polyimide (PI). From vertical alignment (VA) mode, we measured threshold voltages by various PVCi doping concentration. Also, the rise time and fall time of VA cells were measured to verify the best doping concentration. Transmittance curves showed about 70% value between 380 nm and 780 nm wavelength which mean visible region.
(110) Silicon Hard Master Fabrication Using Wet Etching for Multi-Mode Planar Optical Splitter Yu Min Jung, Yeong Cheul Kim, Hwa Il Seo Key Engineering Materials.2006; 321-323: 1704. CrossRef
First
Prev
