Recent studies have focused on enhancing the efficiency of triboelectric nanogenerators (TENGs) using aluminum (Al) and polydimethylsiloxane (PDMS). This research investigates how surface morphology and material structure affect energy generation. By layering PDMS/Al and creating pyramid-shaped patterns, the study found that increasing the number of PDMS/Al layers significantly boosts the output voltage, reaching over 234 mV with three layers. Additionally, increasing the number of pyramid structures from 1 to 36 on PDMS surfaces, while maintaining the same contact area, led to a notable rise in generated voltage due to charge concentration at the pyramid tips. Higher pyramid angles also amplified this effect. These results highlight the importance of structural optimization in maximizing the energy output of TENGs, offering a promising route for more efficient energy harvesting.
Mechanoluminescence (ML) is a phenomenon where the application of mechanical force to ML materials generates an electric field and produces light, holding significant promise as an eco-friendly technology. However, challenges in commercializing ML technology has arisen due to its low brightness and short luminous lifetime. To address this, in this work, we enhance ML efficiency by mixing carbon nanotubes (CNTs) into a ZnS: Cu embedded in a polydimethylsiloxane composite ML device. The inclusion of CNTs boosts ML intensity by 98% compared to devices without CNTs, as the increasing CNT fraction elevates conductivity, thereby amplifying ML intensity. However, this increase in CNT fraction also leads to enhanced light absorption within the device. Consequently, we observe a trend where ML intensity rises initially but declines beyond a CNT fraction of 0.0015 wt%. Based on these findings, we anticipate that our research will make valuable contributions to the advancement of electrical powerless mechanoluminescent technology.
Generally, diamond-like carbon films (a-C:H, DLC) have been shown to have a low coefficient of friction, a high hardness and a low wear rate. Pd-doped C thin film was fabricated using a dual magnetron sputtering with two targets of graphite and palladium. Graphite target RF power was fixed and palladium target RF power was varied. The structural, physical, and surface properties of the deposited thin film were investigated, and the correlation among these properties was examined. The doping ratio of Pd increased as the RF power increased, and the surface roughness of the thin film decreased somewhat as the RF power increased. In addition, the hardness value of the thin film increased, and the adhesive strength was improved. It was confirmed that the value of the contact angle indicating the surface energy increases as the RF power increases. It was concluded that the increase in RF power contributed to the improvement of the physical properties of Pd-doped C thin film.
The facile synthesis of shape-controlled Pd nanoparticles (PdNPs) with ascorbic acid as a reducing agent and cetyltrimethylammonium bromide (CTAB) as a capping agent is presented in this study. The synthesized PdNPs were characterized by UV-vis spectroscopy, transmission electron microscopy (TEM), scanning electron microscopy (SEM), X-ray diffraction (XRD), and Raman Spectroscopy. The prepared PdNPs show efficient surface-enhanced Raman scattering (SERS) properties. SERS studies on the adsorption characteristics of 1,4-phenylene diisocyanide (1,4-PDI) on colloidal PdNPs have revealed that the relative peak intensity of the (NC)free and (NC)bound modes distinctly depends on the 1,4-PDI concentration as well as the shape of the PdNPs. Furthermore, we found that the PdNPs are also efficient photoelectron emitters such that the SERS spectrum of 4-nitrobenzenethiol (4-NBT) on PdNPs is readily converted to that of 4-aminobenzenethiol (4-ABT) under 632.8 nm radiation.
The electromagnetic properties of heavy fermion CePd2Si2 are investigated using density functional theory using the local density approximation (LDA) and LDA+U methods. The Ce f-bands are located near the Fermi energy and hybridized with the Pd-3d states. This hybridization plays an important role in generating the physical characteristics of this compound. The magnetic moment of CePd2Si2 calculated within the LDA scheme does not match with the experimental result because of the strong correlation interaction between the f orbitals. The calculation shows that the specific heat coefficient underestimates the experimental value by a factor of 5.98. This discrepancy is attributed to the formation of quasiparticles. The exchange interaction between the local f electrons and the conduction d electrons is the reason for the formation of quasiparticles. The exchange interaction is significant in CePd2Si2, which makes the quasiparticle mass increase. This enhances the specific heat coefficient.
A poly[bis(4-butypheny)-bis(phenyl)benzidine] (poly-TPD) and poly(9-vinylcarbazole) (PVK) bilayer was employed as a hole transport layer (HTL) in solution-processed CdSe/ZnS quantum dot light-emitting diodes (QLEDs). The thickness of the PVK layer spin-coated onto the poly-TPD layer, whose thickness was fixed to 40 nm, was varied, with PVK layer thicknesses of 0 nm, 35 nm, 45 nm, and 55 nm. Because the thickness of the PVK can determine the hole transport properties of the HTL, a PVK thickness that maximizes the performance of the HTL for the QLEDs was investigated. By employing the optimized PVK thickness of 45 nm, the current efficiency of the QLED exhibited a 1.74 times improvement when compared with that of the QLED with poly-TPD based HTL without PVK. This was mainly attributed to the decrease in the energy barrier between the HTL and the quantum dot (QD) emitting layer (EML).
We fabricated highly flexible Mn-doped SnO2 (MTO)/Ag/MTO/polydimethylsiloxane (PDMS)/MTO multilayer transparent conducting films. To reduce refractive-index mismatching of the MTO/Ag/MTO/polyethylene terephthalate (PET), index-matching layers were inserted between the oxide-metal-oxide-structured films and the PET substrate. The PDMS layer was deposited by spin-coating after adjusting the mixing ratio of PDMS and hexane. We investigated the effects of the index-matching layer on the color and reflectance differences with different PDMS dilution ratios. As the dilution ratio increased from 1:100 to 1:130, the color difference increased slightly, while the reflectance difference decreased from 0.62 to 0.32. The MTO/Ag/MTO/PDMS/MTO film showed a transmittance of 87.18~87.68% at 550 nm. The highest value of the Haacke figure of merit was 47.54×10-3 Ω-1 for the dilution ratio of 1:130.
Ni-InGaAs shows promise as a self-aligned S/D (source/drain) alloy for n-InGaAs MOSFETs (metal-oxide-semiconductor field-effect transistors). However, limited thermal stability and instability of the microstructural morphology of Ni-InGaAs could limit the device performance. The in situ deposition of a Pd interlayer beneath the Ni layer was proposed as a strategy to improve the thermal stability of Ni-InGaAs. The Ni-InGaAs alloy layer prepared with the Pd interlayer showed better surface roughness and thermal stability after furnace annealing at 570℃ for 30 min, while the Ni-InGaAs without the Pd interlayer showed degradation above 500℃. The Pd/Ni/TiN structure offers a promising route to thermally immune Ni-InGaAs with applications in future n-InGaAs MOSFET technologies.
This paper dealt with the deterioration characteristics and an on-line diagnosis equipment for SPDs (surge protective devices). An accelerated aging test was carried out using a 8/20 μs standard lightning impulse current to analyze the changes of electrical characteristics and to propose the diagnostic parameters and the criterion for deterioration of ZnO varistor which is the core component of SPDs. Based on the experimental results, an on-line diagnosis equipment for SPD was fabricated, which can measure the total leakage current, reference and clamping voltage. The leakage current measurement circuit was designed using a low-noise amplifier and a clamp type ZCT. A linear controller, the leakage current measurement part and a HVDC were used in the measurement of reference voltage. The measurement circuit of clamping voltage consisted of a surge generator and a coupling circuit. In a calibration process, measurement error of the prototype equipment was less than 3%.
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A Design on Compact Surge Counter to Prevent Degradation of Surge Protection Devices Jae-Nam Lee, Bangwon Seo The Journal of Korean Institute of Information Technology.2020; 18(7): 65. CrossRef
This paper deals with the characteristics of partial discharge (PD) for the purpose of a condition based maintenance (CBM) of gas insulated switchgears (GIS) in power equipment. Four types of electrode systems such as a protrusion on enclosure (POE), a particle on spacer (POS), a free particle (FP) and a Floating were designed and fabricated. PD pulses were measured using UHF sensor with a frequency range of 300 MHz∼1.4 GHz and a DAQ with a sampling rate of 250 MS/s. Discharge inception voltage (DIV), discharge extinction voltage (DEV), and phase resolved partial discharge (PRPD) were analyzed depending on electrode systems. The average DIV in the POS was 28.8 kV. It was about 1.7 times higher than that in the FP, which was the lowest value of 17.2 kV. The FP shuffled and jumped at the applied voltage of 23.5 kV. Over 95% of PD pulses in the POE were generated in the negative polarity (181°∼360°) of applied voltage. The results showed the phase (Φ)-magnitude (dBm) of PD pulses by UHF sensor, a cluster was formed separately depending on electrode systems.
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Analysis of PD Signal for Condition Monitoring of MV Switchboards by the Measurement of Transient Earth Voltage Guoming Wang, Woo-Hyun Kim, Jeong-Bae Kong, Gyung-Suk Kil, Hong-Keun Ji Transactions on Electrical and Electronic Materials.2018; 19(3): 195. CrossRef
One of the important issues for fabricating the microelectronic display devices such as FED, PDP, and VFD is to obtain a high vacuum level inside the panel. In addition, sustaining the initial high vacuum level permanently is also very important. In the conventional packing technology using a tabulation method, it is not possible to obtain a satisfiable vacuum level for a proper operation. In case of FED, the poor vacuum level results in the increase of operating voltage for electron emission from field emitter tips and an arcing problem, resultantly shortening a life time. Furthermore, the reduction of a sealing process time in the PDP production is veryimportant in respect of commercial product. The most probable method for obtaining the initial high vacuum level inside the space with such a miniature and complex geometry is a vacuum in-line sealing which seals two glass plates within a high vacuum chamber. The critical solution for the vacuum sealing is to develop a frit glass to avoid the bubbling or crack problems during the sealing process at high temperature of about 400℃ under the vacuum environment. In this study, the suitable frit power was developed using a mixture of vitreous and crystalline type frit powders, and a vacuum sealed CNT FED with 2 inch diagonal size was fabricated and successfully operated.
Studies on a SF_{6}-mixture and -alternative gas has been in progress to reduce the use of SF_{6} gas as an insulation material of GIS (gas insulated switchgears). In this paper, we dealt with PD (partial discharge) characteristics in pure SF_{6} and N_{2}, and their mixtures on aspects of insulation design and risk assessment for GIS. A POC (protrusion on conductor) and a POE (protrusion on enclosure) as the major defects were fabricated to simulate PD. We analyzed the DIV (discharge inception voltage), DEV (discharge extinction voltage), pulse magnitude, counts and phase distribution of PD pulse in SF_{6}-N_{2} mixtures (SF_{6} 100%, SF_{6} 80%-N_{2} 20%, SF_{6} 50%-N_{2} 50%, SF_{6} 20%-N_{2} 80%, and N_{2} 100%) according to the IEC60270. The DIV, DEV as well as magnitude of PD pulse decreased on the POC as increase of N_{2} ratio. For the POE, the DIV and DEV in N_{2} ratio below 50% were the same voltages as those in SF_{6} 100%. In this experiment, SF_{6} 80%-N_{2} 20% mixture could be considered with the equivalent insulation performance to a GIS.
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Characterization of partial discharge decomposition of SF6/N2 gas mixture with different microwater contents Shan Gao, Hanyan Xiao, Ran Ding, Ze Yin, Tianxin Zhuang, Hongtao Li, Ao Zhan, Fanchao Ye AIP Advances.2024;[Epub] CrossRef
This paper dealt with the PD (partial discharge) characteristics produced by metallic particles presented in a gas insulated switchgear. Four types of metallic particles such as a ball, a trapezoid, a rectangle, and a twist were fabricated and placed in a PD cell filled with SF6 gas. PD pulses were detected through a 50 Ω non-inductive resistor. Calibration was carried out according to IEC 60270 and the sensitivity was calculated as 4 mV/pC. Apparent charge, pulse count, DIV (discharge inception voltage), DEV (discharge extinction voltage), and TRPD (time resolved partial discharge) were analyzed. Among the metallic particle types, the twist frequently occurred PD pulse at the lowest DIV, while the rectangle showed the highest. DEV of the twist was about 2 times lower than that for the rectangle. Kurtosis of ball clustered at high value, and skewness of other three metallic particles distributed at low value. TRPD showed different distribution by metallic particle types.
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Analysis of PD Signal for Condition Monitoring of MV Switchboards by the Measurement of Transient Earth Voltage Guoming Wang, Woo-Hyun Kim, Jeong-Bae Kong, Gyung-Suk Kil, Hong-Keun Ji Transactions on Electrical and Electronic Materials.2018; 19(3): 195. CrossRef
We established the emulsion method using membrane filter with precise control of LC droplet distribution in PDLC. PDLC cells with various LC droplet size distributions such as single droplet sizes of 1.0 μn, 1.9 μn and 3.5 μm, the mixture of two different LC droplet sizes and the mixture of three different LC droplet sizes were fabricated and the electro-optical properties of the emulsion type PDLC cells with various droplet size distribution were investigated. In the appropriate droplet size range, the PDLCs with the single droplet sizes distributions have good electro optical properties than those with the mixture of three different LC droplet sizes. In addition, the PDLC cells with the mixture of two different LC droplet sizes have the better electro optical properties than those with single droplet sizes distribution. The PDLC cell with dual droplet size distribution of 1.0+1.9 μm shown the best electro optical properties than the PDLC cells with other size distributions. This method enabled us to find the proper LC droplet size distribution for achieving both high transmittance and contrast ratio.
This paper dealt with a defect identification algorithm which is based on single partial discharge (PD) pulse analysis in gas insulated structure. Four types of electrode systems such as a needle-plane, a plane-needle, a free particle and a crack inside spacer were fabricated to simulate defects in gas insulated switchgear (GIS). We measured single PD pulse by an oscilloscope with a sampling rate of 5 GS/s and a frequency bandwidth of 1 GHz. Data aquisition and signal processing were controlled by a LabVIEW program. Physical shapes of PD pulses were compared with kurtosis, skewness and time-based parameters as rising time, falling time and pulse-width. These parameters were analysed by an algorithm with a back propagation algorithm (BPA). By applying the algorithm, the identification rate was 97% for the needle-plane electrode, 96% for the plane-needle electrode, 91% for the free particle and 93% for the crack inside spacer. The results verified that the algorithm could identify the type of defects in GIS.
As the temperature of the panel increases in AC-PDPs, the minimum driving voltage increases. Also, as the more the number of discharge increases in cells, the probability of the strong dark discharge in the reset period increases. In this study, we investigated the relationship between the lag time of the discharge and the mechanism of mis-discharges which are the black noise and bright noise. We conclude that the variation of time lag characterizes the properties of exo-electron emission from MgO. Thus, we found that the main factor of the mis-discharges is the rate of change of the electron emission ability from the MgO surface.
Electrode systems: a protrusion on conductor (POC), a protrusion on enclosure (POE), a crack in epoxy plate and a free particle (FP) were fabricated to simulate insulation defects in a gas insulated switchgear (GIS). SF6 gas was filled in the electrode systems by 3 bar and/or 5 bar, respectively. Partial discharge (PD) pulses were detected through a 50 Ω non-inductive resistor. A calibration test was carried out according to IEC 60270, and the sensitivity was 0.25 pC/mV. PD pulses were distributed in the phase of 50˚∼135˚ and over 95% of them existed in the phase of 55˚∼120˚ for the POC. PD pulses were distributed in the phase of 230˚~310˚ and over 90% of them existed in phase of 220˚∼300˚ for the POE. PD pulses occurred in the phase of 40˚∼60˚ and 220˚∼300˚ for the crack, and pulse counts were 25%higher in negative polarity than in positive polarity. PD pulses were distributed in every phase unlike to other three electrode systems and the peak magnitude was measured at 118˚ and 260˚ for the FP. As described above, PD pulses were observed in positive polarity for the POC, in negative one for the POE, in both one for the crack and the FP. In conclusion, it is expected that the identification rate of defect type can be improved by considering the polarity ratio of PD pulses on the PRPDA method.
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Identification of Partial Discharge Defect Detection in Cast-Resin Power Transformers Using Back-Propagation Algorithm Sung-Wook Kim Journal of information and communication convergence engineering.2024; 22(3): 231. CrossRef
It has been confirmed that the inner defect of transformer and the perfect diagnosis for aging are closely related to safe electric power transmission system and that the detection of accident and diagnosis technique turn out to be very important issues. Since electric power machinery consists of various kinds of components, however, it is very difficult to make a diagnosis for aging by one parameter. Thus, diagnosis for aging is feasible only through the combination of various parameters. Recently, various expert systems have been developed and applied to diagnosis for aging, but they are not yet reliable enough to apply to the real system. In this paper, XLPE which is ultra high voltage cableinsulator material were chosen to investigate the influence of void on insulator material using partial discharge. Obtained data have been processed by PRPD (phased resolved partial discharge) distribution function and K-means. And statistical and cluster distribution of partial discharge have been analysed and investigated.
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Building an XGBoost model based on landscape metrics and meteorological data for nonpoint source pollution management in the Nakdong river watershed Sun Hee Shim, Jung Hyun Choi Ecological Indicators.2024; 165: 112156. CrossRef
This paper dealt with the measurement and analysis of partial discharge (PD) under high voltage direct current (HVDC) in SF6 gas. Electrode systems such as a protrusion on conductor (POC), a protrusion on enclosure (POE), a crack on epoxy plate and a free particle (FP) were fabricated to simulate the insulation defects. The analysis system was designed with a Time-Frequency (T-F) map algorithm programed based on Lab VIEW. This can arrange the acquired PD pulses into frequency and time domain. A HVDC power source is composed of a transformer (220 V/50 kV), a diode (100 kV) and a capacitor (50 kV, 0.5 μF). The gap between the electrodes is 3 mm, and the SF6 gas was set at 5 bar. PD pulses were detected by a 50 Ω non-inductive resistor. In the analysis, PD pulses were distributed below 0.5 MHz and 20 ns ∼ 35 ns for the POC, 0.7 MHz ∼ 1.7 MHz, below 0.6 MHz and 10 ns ∼ 40 ns and 60 ns ∼125 ns for the POE, below 0.1 MHz and 135 ns ∼ 215 ns for the crack, and below 1.6 MHz and 250 ns for the FP.
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Identification of Partial Discharge Defect Detection in Cast-Resin Power Transformers Using Back-Propagation Algorithm Sung-Wook Kim Journal of information and communication convergence engineering.2024; 22(3): 231. CrossRef
We have developed quantum dot light emitting diodes (QD-LEDs) using a InP/ZnSe/ZnS multi-shell QD emission layer. The hybrid structure of organic hole transport layer/QD/organic electron transport layer was used for fabricating QD-LEDs. Poly(4-butylphenyl-diphenyl-amine) (poly-TPD) and tris[2,4,6-trimethyl-3-(pyridin-3-yl)phenyl]borane (3TPYMB) molecules were used as hole-transporting and electron-transporting layers, respectively. The emission, current efficiency, and driving characteristics of QD-LEDs with 50, 65 nm thick 3TPYMB layers were investigated. The QD-LED with a 50 nm thick 3TPYMB layer exhibited a maximum current efficiency of 1.3 cd/A.
We investigated the luminescence properties of Alq3 in the device structure of ITO/CuPc/TPD/Alq3/Al. The CuPc as a hole-injection material and TPD as hole-transport material. Emission properties were measured by varying a layer thickness of CuPc (0 nm to 50 nm), which is the hole-injection layer. As a result, it was found that the hole injection occurs smoothly when the layer thickness was 20 nm among the thicknesses from 0 nm to 50 nm.
The effect of address discharge characteristics by selective reset method is investigated to prevent the weakness of address discharge in the middle of a TV-field without increase of the black luminance. To reduce black luminance in AC PDP usually, the first subfield during one TV frame adopted the conventional rising ramp-reset waveform, whereas the other subfields adopted the subsidiary reset waveform without rising ramp type. As the wall charge for the address discharge was accumulated by only the rising ramp waveform during the first reset period, the wall charge on three electrodes was disappeared as time passed and the address discharge would be weakened in the rear subfields. To prevent a reduction of the address discharge characteristics without decrease the black luminance, the modified rising ramp reset waveform was adopted only in the sixth subfield. As a result, a modified driving method could improve the address discharge characteristics compared with selective reset driving scheme with almost the same black luminance.
The address discharge characteristics of a open dielectric structure compared with the conventional panel structure are investigated by measuring the discharge firing voltage. The open dielectric structure could easily produce the discharge between the scan and the sustain electrodes by erasing the dielectric layer between two electrodes. Due to the changes in the discharge firing characteristics of the open dielectric structure between the two sustain electrodes, the conventional reset waveform including the address waveform needs to be modified. The modified driving waveform suitable for the open dielectric structure is proposed and examined in AC PDP.
This paper dealt with the measurement and analysis of electromagnetic waves radiated from a partial discharge (PD) source in insulation oil to apply condition monitoring of oil-immersed transformers. Two types of narrow-band monopole antennas with the resonant frequency of a 500 MHz and a 1 GHz were designed and fabricated. Also, a needle plane electrode system was manufactured to simulate PDs and the curvature radius of the needle is 10 pm and the diameter of the plane is 60 mm. Electromagnetic wave was measured by the PD measurement system with the monopole antennas. Detection sensitivity of the fabricated antenna was compared for the same P1) magnitude; 620 mVpeak for the 500 MHz antenna and 960 mV1,t for the 1 GHz antenna to the PD magnitude of 74 pC. Consequently, the 1 GHz monopole antenna is more effective to detect PDs in oil immersed transformers.
A study on capacitive characteristics of stylus pen for touch panel are progressed in this paper. Also the main factors for capacitive sensitivity are studied. Namely, highly sensitive stylus pen which can be applied to capacitive touch panel are studied based on the analysis of materials and process conditions regardless of pattern shapes. Stylus pen was made of PDMS(Poly-Di-Methyl-Siloxane) and conductive metal powders which does not damage the touch panel surface. We tried to get the advantages of both the properties of soft PDMS and conductive metal powders. We found that potential difference of capacitance change with conductivity of the composite materials(PDMS + metal powders) it implies that during touch process, large voltage difference can be caused by the high conductive materials of stylus pen. Stylus pen made by PDMS with mixed with Ag powders which has large conductivity shows more capacitance change of 1 pF than PDMS with other materials of Ni or C powders.
This paper dealt with the fabrication of a partial discharge (PD) analyzer for insulation diagnosis of power facilities like transformers, cables and gas-insulated switchgears. An analytic algorithm for the phase (φ), the magnitude (q), and the pulse count (n) of PD pulse was designed and a time-frequency (TF) map algorithm was applied in the system to eliminate noises by analyzing the time and the frequency component of signals. All the algorithms were operated by a LabView graphical program. The detection circuit consists of a coupling capacitor, a detection impedance, and a low noise amplifier. A plane-plane and a point-plane electrode system were fabricated to simulate different types of insulation defects. In the experiment, we could easily understand the characteristics of PD pulses using the prototype PD analyzer.
The TiO2/Si3N4/Ag/Si3N4/TiO2 multi layered structure was designed for the possible application of transparent electrodes in PDP (Plasma Display Panel). Multi layered film was deposited on a glass substrate at room temperature by DC/RF magnetron sputtering system and EMP (Essential Macleod Program) was adopted to optimize the optical characteristics of film. During the deposition process, the Ag layer in TiO2/Ag/TiO2 became heavily oxidized and the filter characteristic was degraded easily. In thus study, Si3N4 layer was used as a diffusion buffer layer between TiO2 and Ag. in order to prevent the oxidation of Ag layer in TiO2/Si3N4/Ag/Si3N4/TiO2 structure. It was confirmed that Si3N4 layer is one of candidate materials acting as diffusin barrier between TiO2/Ag/TiO2.
In this paper, thermal stability of palladium germanide (Pd germanide) is analyzed for high performance Schottky barrier germanium metal oxide semiconductor field effect transistors (SB Ge-MOSFETs). Pd germanide Schottky barrier diodes were fabricated on n-type Ge-on-Si substrates and the formed Pd germanide shows thermal immunity up to 450℃. The barrier height of Pd germanide is also characterized using two methods. It is shown that Pd germanide contact has electron Schottky barrier height of 0.569∼0.631 eV and work function of 4.699∼4.761 eV, respectively. Pd germanide is promising for the nanoscale Schottky barrier Ge channel MOSFETs.
The TiO2/ZnS/Ag/ZnS/TiO2 multilayered structure for the transparent electrodes in plasma display panel was designed by essential macleod program (EMP) and the multilayered film was deposited on a glass substrate by direct-current (DC)/radio-frequency (RF) magnetron sputtering system. During film deposition process, the Ag layer in TiO2/Ag/TiO2 structure became oxidized and the filter characteristic was degraded easily. In this study, ZnS layer was adopted as a diffusion blocking layer between TiO2 and Ag to prevent the oxidation of Ag layer efficiently in TiO2/ZnS/Ag/ZnS/TiO2 structure. Based on the AES depth profiling analysis, the Ag layer was effectively protected by the ZnS layer as compared with the TiO2/Ag/TiO2 multilayered films without ZnS as an antioxidant layer. The 3 times stacked TiO2/ZnS/Ag/ZnS/TiO2 films have low sheet resistance of 1.22 Ω/□ and luminous transmittance was as high as 62% in the visible ranges.