Silicon nitride thin film deposited with Plasma Enhanced Chemical Vapor Deposition was treated by a nitrogen plasma generated by Inductively Coupled Plasma at room temperature. The treatment was investigated by Fourier Transform Infrared Spectroscopy and Atomic Force Microscopy on the surface at various RF source powers at two RF bias powers. The amount of hydrogen was reduced and the surface roughness of the films was decreased remarkably after the plasma treatment. In order to understand the causes, we analyzed the plasma diagnostics by Optical Emission Spectroscopy and Double Langmuir Probe. Based on these analysis results, we show that the nitrogen plasma treatment was effective in the improving of the properties silicon nitride thin film for flexible display.

In this study, the surface modification of copper foil using an inductively coupled O2 / Ar plasma as O2 gas fraction (0∼100%) was investigated in order to improve the surface characteristics. After plasma treatment, the measurement of the surface roughness, surface contact angle and surface energy were performed for the surface analysis of copper foil. As a result, the surface roughness and the surface energy were increased. And plasma diagnostics was performed by a double Langmuir probe (DLP) and optical emission spectroscopy (OES). Using these results, the plasma surface modification mechanism was investigated.

The silicon nitride films were prepared by chemical vapor deposition using inductively coupled plasma. During the deposition, the substrate was heated at 150℃ and power 1,000 W. To evolution low temperature manufacture, we have studied the role of source gases, SiH4, NH3, N2, and H2, to produce Si-N and N-H bond in a-SiNx:H film growth. SiH4, NH3, and N2 flow rate fixed at 100, 10, and 10 sccm, H2 flow rate varied from 0 to 10 sccm by small scale. To get the electrical characteristics, we make MIM structure, and analysis surface bonding state. Experimental data show that Si-N and N-H bond is increased and hence electrical characteristics is showed 3 MV/cm breakdown-voltage, and leakage-current 10(-7) A/cm2.

In this study, the etching characteristics of Al2O3 thin films were investigated using an ICP (inductively coupled plasma) of BCl3/Ar gas mixture. The etch rate of Al2O3 thin films as well as the SiO2/Al2O3 etch selectivity were measured as functions of BCl3/Ar mixing ratio (0∼100% Ar) at a constant gas pressure (10 mTorr), total gas flow rate (40 sccm), input power (800 W) and bias power (100 W). The behavior of the Al2O3 etch rate was shown to be quite typical for ion-assisted etch processes with a dominant chemical etch pathway. To analyze the etching mechanism using DLP (double langmuir probe), OES (optical emission spectroscopy) and surface analysis using XPS (x-ray photoelectron spectroscopy) were carried out.

This work, the etching characteristics of Ba2Ti9O20(BTO) thin films were investigated using an inductively coupled plasma (ICP) of Ar/Cl2 gas mixture. The etch rate of BTO thin films as well as the BTO/SiO2 and BTO/PR etch selectivity were measured as functions of Ar/Cl2 mixing ratio (0∼100% Ar) at a constants gas pressure (6 mTorr), total gas flow rate (50 sccm), input power (700 W) and bias power (200 W). The etch rate of BTO thin films decreased with increasing Ar fraction. To analyze the etching mechanism an optical emission spectroscopy (OES), double Langmuir probe(DLP) and surface analysis using X-ray photoelectron spectroscopy (XPS) were carried out.