In this research, we evaluated the electrical properties of polycrystalline-gallium-oxide (Ga₂O₃) thin films grown by mist-CVD. A 500~800 nm-thick Ga₂O₃ film was used as a channel in a fabricated bottom-gate MOSFET device. The phase stability of the β-phase Ga₂O₃ layer was enhanced by an annealing treatment. A Ti/Al metal stack served as source and drain electrodes. Maximum drain current (I_D) exceeded 1 mA at a drain voltage (VD) of 20 V. Electron mobility of the β-Ga₂O₃ channel was determined from maximum transconductance (gm), as approximately, 1.39 cm²/Vs. Reasonable device characteristics were demonstrated, from measurement of drain current-gate voltage, for mist-CVD-grown Ga₂O³ thin films.

In this study, to develop low temperature sintering capacitor composition ceramics with the good dielectric properties, (Ba0.86Ca0.14)(Ti0.85Zr0.12Sn0.03)O3 (BCTZ) ceramics were prepared by the conventional solid-state reaction method. The effects of B2O3 addition on the dielectric properties and microstructure was investigated. The XRD patterns demonstrated that all the specimens showed Perovskite phase, and secondary phases are indicated in the measurement range of XRD. And also, temperature coefficient of capacitance(TCC) of all the specimen sintered at 1,180℃ showed +3∼-56% except for x=0.006. For all the specimens, observed one peak was tetragonal cubic difuse phase transition temperature(Tc), which is located in the vicinity of room temperature.

In this paper, the failure mechanism of PTC heater were examined closely by failure analysis and based on it, accelerated life test were conducted. Finally, life distribution and acceleration model were established. The failure mechanism of PTC heater such as crack, increase of resistance due to heating were identified. Two acceleration factors such as temperature, humidity were chosen with two levels each and accelerated life test were done. Life distribution were identified as Weibull distribution with shape parameter 5.4 and Temperature-Humidity model was fitted as an acceleration model.

The photoinduced hydrophilicity of TiO2/WO3 double layer films was fabricated by using a conventional rf-magnetron sputtering method. The photoinduced hydrophilic reaction of the TiO2 surface was enhanced by the presence of WO3 under the TiO2 layer by irradiation of a 10 W cylindrical fluorescent light bulb. However, when the TiO2 and WO3 layers were separated by an insulating layer, the surface did not appeared high hydrophilic,under the same light bulb. The enhanced photoinduced hydrophilic reaction can be explained by the charge transfer between TiO2 and WO3 layers. It was also demonstrated that visible light passing through the TiO2 layer could excite WO3. Thus, visible light can be used for the hydrophilic reaction in the present TiO2/WO3 system.

We have investigated the properties of Al-doped ZnO (AZO) thin films as functions of atomic layer deposition (ALD) oxidants. AZO transparent conducting oxides (TCOs) layer was deposited by ALD with adding trimethylaluminum (TMA) and diethylzinc (DEZn). AZO films were deposited at low temperature with H2O and O3 as oxidants. Electrical, optical and structural properties of AZO thin films were investigated by 4-point probe, Hall effect measurement, UV-VIS, and AFM. Microstructure and atomic bonding states were investigated by HRXRD and XPS. The resistivity of AZO films grown using H2O was lower than the films grown using H2O and O3, by approximately two orders of magnitude. The differences in oxygen vacancy peak intensity of AZO films were correlated to the optical and electrical properties.

Nano-size BaTiO3 powder was synthesized by relatively simple hydrothermal reaction method. Finely dispersed Ti hydroxide precursor was first precipitated using Ti(SO4)2 and NaOH solution by applying ultrasonic power and washed thoroughly to remove SO4 2- and Na+ ion. Then hydrothermal reaction was done at 160℃ for 6 hrs using solution prepared by washed Ti hydroxide precursor slurry and Ba(OH)2ㆍ8H2O with Ti:Ba mole ratio of 1:1. 200 ~ 500 nm size and uniform size distributed BaTiO3 powder was synthesized by relatively low temperature and simple process.

In this study, in order to develop the capacitor composition ceramics with the good dielectric properties, (Ba0.86Ca0.14)(Ti0.85Zr0.12Sn0.03)O3+ xCuO (x= 0.006~0.010) ceramics were prepared by the conventional solid-state reaction method. The effects of CuO addition on the microstructure and dielectric properties was investigated. All specimens indicated rhombohedra1 phase without any secondary phase. As CuO addition increased, the variation width of TCC was increased at more than 40°C. Also, the specimen with x=0.007 sintered at 1,250°C showed the high dielectric constant of 9,632 in spite of low temperature sintering temperature.

Some insulating materials are organized and analyzed with variables to obtain the optimized profile of encapsulated three phase of epoxy barrier which is applied to gas compartment and supporting conductors for high voltage GIS (gas insulated switchgear). The high voltage GIS is used in electrical power system and operating reliability. In this paper, optimization possibility of barrier shape including both electrical insulation performance and mechanical strength, premised on that condition minimizing volume and light weight should be kept for high voltage GIS, could be achieved by analysis simulation. As a result, filling material which is lower permittivity such as SiO2 instead of Al2O3 properly to the epoxy material, can be improved to increase the electrical insulation performance and mechanical strength for an optimized profile barrier of a high voltage GIS.

In this study, (1-x)Pb(Mg1/2W1/2)0.03(Ni1/3Nb2/3)0.09(Zr0.5Ti0.5)0.88O3 + xCeMnO3 (x= 0∼0.02) ceramics were prepared by Columbite precursor method. The phase structure, ferroelectric and piezoelectric properties were systematically investigated. It was found that PMW-PNN-PZT possessed superior electrical properties due to its composition close to the MPB (morphotropic phase boundary). Coercive electric field of 10.05 [kV/cm] and density of 7.88 [g/cm3] were obtained when the substitution amount of CeMnO3 is x=0.02. In contrast, specimens with x=0.01 showed the mechanical quality factor(Qm) of 1,091 and the electromechanical coupling factor(kp) of 0.613.

(Na,K)NbO3-based piezoelectric ceramics were synthesized by a solid phase sintering method with various milling solvents. The solvents were varied with acetone, ethanol, and pure water to investigate the effect on the microstructure and electrical properties. NKN ceramics showed the maximum values of the relative density (94%), the mechanical quality factor (Qm: 78) and the electro-mechanical coupling factor (kp: 0.25) at the ethanol solvent. It might mean that a solid phase sintering of the NKN piezoelectrics with a suitable solvent could improve the relative density and the piezoelectric properties.

In this study, in order to develop the capacitor composition ceramics with the good dielectric properties, (Ba1-xCax)(Ti0.85Zr0.12Sn0.03)O3 (abbreviated as BCTZ) ceramics were prepared by the conventional solid-state reaction method. The effects of Ca substitution on the microstructure and dielectric properties was investigated. The X-ray diffraction patterns demonstrated that all the specimens showed perovskitephase, and secondary phases are indicated in the measurement range of X-ray diffraction. Also, all the specimens indicated an rhombohedron phase structure. It was identified from the X-ray diffraction patterns that the secondary phase formed in grain boundaries and then decreased the dielectric properties. For all the specimens, observed one peak was tetragonal cubic phase transition temperature(TC),which is located in the vicinity of room temperature.

Bi0.5+x(Na0.78K0.22)0.5-3xTiO3 ceramics with an excess Bi3+ and a deficiency of Na+ and K+ were synthesized by a conventional solid state reaction method. The structure and morphology ofBi0.5+x(Na0.78K0.22)0.5-3xTiO3 ceramics were characterized by X-ray diffraction and field emission scanning electron microscopy. The electric polarization and mechanical strain induced by external electric field, and the temperature dependence of dielectric constant were investigated. These results demonstrated that anergodic relax or phase can be induced by controls of the mole ratio of Bi3+, Na+ and K+. A phase boundary between non-ergodic and ergodic relaxor phases can be observed at ambient temperature. Theergodic relaxor phase can be transferred to the ferroelectric phase by application of the electric field. The stability of the induced ferroelectric phases strongly depends on the mole ratio of Bi3+, Na+ and K+. The maximum strain of 0.31% was observed in Bi0.51(Na0.78K0.22)0.47TiO3 ceramics sintered at 1,150℃ for 2 h.

BaTiO3 nano powder can be synthesized by hydrate salt method at 120℃ in air. Decreasing the thickness of thick film, the nano dielectric particle is needed in electronic ceramics. However, the synthesis of BaTiO3 nano particle at low temperature in air and their mechanism were not reported enough. And ultrasonic treatment can be tried because of low temperature process in air. Therefore, in this study, the BaTiO3 nano powder was synthesised with the synthesis time and ultrasonic treatment at120oC in air. In the synthesis process, the effects of process were evaluated. From the experimental observation, the synthesis mechanism was proposed. The homogeneous BaTiO3 particle was synthesized by KOH salt solution at 120℃ for 1hour. It was conformed that the ultrasonic treatment effected on theincrease of synthesis rate. After cutting the salt powder using FIB, BaTiO3 nano particles observed homogeneously in the cross-section of the salt particle.

The 0.99Bi0.5(Na0.78K0.22)0.5TiO3?0.01LaAlO3, 0.01LaMnO3 or 0.01LaFeO3 (0.99BNKT?0.01LA,0.01LM or 0.01LF) ceramics were prepared by a conventional mixed mothod. The structure andmorphology of the lead free ceramics were characterized by XRD (X-ray diffraction) and FE-SEM (fieldemission scanning electron microscopy). XRD results indicated that the BNKT ceramics modified by LA,LM or LF induced a transition from a ferroelectric tetragonal to a non-polar pseudo-cubic phase, leadingto decrease in the remnant polarization (Pr) and coercive field (Ec) in the P-E hysterisis loops. Theeffects of the BNKT ceramics modified by La-based ABO3 pervskite structure on the electric-fieldinduced strain were investigated, and the largest normalized unipolar strain (Smax/Emax) was found inBNKT-0.01LF ceramic.

n this paper, in order to develop outstanding Pb-free composition ceramics, the Fe2O3-doped(Na0.525K0.443Li0.037)(Nb0.883Sb0.08 Ta0.037)O3 + 0.3 wt% Bi2O3 + x wt% Fe2O3 (x= 0∼1.0 wt%)(abbreviated as NKL-NST) lead-free piezoelectric ceramics have been synthesized using the ordinary solid state reaction method. The effect of Fe2O3-doping on their microstructure and electrical properties were investigated. XRD diffraction pattern studies confirm that Fe2O3 completely diffused into the NKL-NSTlattice to form a new stable soild solution with Fe3+ entering the Nb5+, Sb5+ and Ta5+ of B-site. And, phase structure of all the ceramics exhibited pure perovskite phase and no secondary phase was found in the ceramics. The ceramics doped with 0.6 wt% Fe2O3 have the optimum values of piezoelectric constant(d33), planar piezoelectric coupling coefficient(kp) and mechanical quality factor(Qm) : d33= 233[pC/N], kp= 0.44, Qm= 95. These results indicate that the (Na0.525K0.443Li0.037)(Nb0.883Sb0.08Ta0.037)O3 +0.3 wt%Bi2O3 + 0.6 wt% Fe2O3 ceramic is a promising candidate for lead-free piezoelectric ceramics.

Al2O3 films on silicon carbide were fabricated by Aerosol deposition with annealing temperatureat 800℃ and 1,000℃. The effect of thermal treatment on physical properties of Al2O3 thin films has beeninvestigated by XRD (X-ray diffraction), AFM (atomic force microscope), SEM (scanning electronmicroscope), and AES (auger electron spectroscopy). Also electrical properties have been investigated byKeithley 4,200 semiconductor parameter analyzer to explain the interface trapped charge density (Dit),flatband voltage (VFB) and leakage current (Io). Al2O3 films become crystallized with increasingtemperature by calculating full width at half maximum (FWHM) of diffraction peaks, also surfacemorphology is observed by topography measurement in non-contact mode AFM. Dit was 2.26×10-12eV-1.cm-2 at 800℃ annealed sample, which is the lowest value in all samples. Also the sample annealedat 800℃ has the lowest leakage current of 4.89×10-13 A.

Thin films of cubic Na0.6WO3, which is one of the sodium tungsten bronze, were fabricated byrf sputtering for the electrode applications in integrated sensors and actuators. A single-phase cubicNa0.6WO3 sputtering target of power type was prepared by conventional solid-state reaction. Thin filmswere deposited from the powder target, and the as-deposited films were amorphous, thus they annealedby tube furnace or RTP for crystallization. Thin films having cubic phase NaxWO3 were fabricated by theoptimization of sputtering and post-annealing conditions, but single-phase cubic Na0.6WO3 thin films werenot obtained. Although the films were not in single phase, they had good electrical conduction propertiesshowing electrical resistivities of 10-4 Ω·cm order.

l.ao.5Sro5CoO₃ (LSCO) electrode thin films with a resistivity of ~ 1,600 μΩcm were grown on c-Al₂O₃ (0001) substrates. ZnsnO₃ (ZTO) thin films with different thicknesses were directly grown on LSCO/c-Al₂O₃ (0001) substrates at a substrate temperature that ranged from 550 to 750 ℃ using Pulsed Laser Deposition (PLD). The secondary phase Zn₂SnO₄ occurred during the growth of ZTO films and it became more significant with further increasing substrate temperature. Polarization-electrc-field (P-E) hysteresis characteristics. with a remnant polarization and coercive field of 0.05 μC/㎠ and 48 kv/cm, respectively, were obtained in the ZTO film grown at 700℃ in 200 mTorr.

In this study, lead-free Piezoelectric (Na0.47K0.47Sr0.03Ca0.03)(Nb0.94Ti0.06)O3-0.1 MnO2 ceramics werefabricated using mixed oxide method and the effects of various sintering temperature on the structural andelectrical properties were investigated. For the (Na0.47K0.47Sr0.03Ca0.03)(Nb0.94Ti0.06)O3-0.1 MnO2 (NKN-SCT-MnO2)ceramics sintered at temperatures of 1,025∼1,100℃. The results indicated that all specimens were perovskitesingle phase formation without any second phase. It has been shown that relative density is increased toincreasing sintering temperature. When the sintered temperature at 1,075℃, highest sintered density andmaximum value of 4.45 g/cm3. Average grain size is increased to increasing sintering temperature. Theelectromechanical coupling factor, dielectric constant, dielectric loss, d33 and curie temperature at the sinteringtemperature 1,075℃ of NKN-SCT-MnO2 specimens were 0.22, 511, 0.033, 103 and 380℃, respectively.

Because the Pb-based piezoelectric materials showed problems such as an environmentalpollution. lead-free ZnSnO3 materials were studied in the present study. The ZnSnO3 thin films weredeposited at 640℃ on Pt/Ti/SiO2 substrate by pulsed laser deposition (PLD) and were annealed for 5 minat 750℃ using rapid thermal annealing (RTA) in nitrogen atmosphere. Samples annealed at 750℃ showeda smooth morphology and an improvement of the dielectric and leakage properties, as compared withas-grown samples. However, electrical properties of the ZnSnO3 thin films obtained in the present studyshould be improved for piezoelectric applications.

It was firstly found in 1st group element. Recently, it has been reported on the improvement ofefficiency of the OLEDs by introducing thin layer of some carbonate materials of alkali metal. In order toimprove the efficiency of OLEDs which is one of the next generation displays, we have studied the electricalcharacteristics of the device depending on the thickness ratio of the hole-injection layer to theelectron-injection layer. Teflon-AF was used as the hole-injection material, and alkali-metal carbonates ofLi2CO3 were used as the electron-injection materials. To obtain a proper thickness ratio, we manufactured. Fourtypes of devices with the thickness ratio of HIL to EIL were made to be 1 : 4, 2 : 3, 3 : 2, and 4 : 1. Theresults of electrical and optical properties showed that the device with the thickness ratio of 4 : 1 is the mostexcellent result. In addition, to prepare a four-layer device by inserting the α-NPD is a hole transportingmaterial was compared with three-layer element. As a result, the maximum luminance, the maximum luminousefficiency, maximum external quantum efficiency of about 124 [%], 164 [%], 106 [%] improve was confirmed.

Indium Zinc Tin Oxide (IZTO) thin films were developed as an alternative to Indium Tin Oxide (ITO) thin films. ITO material which has been acknowledged with its low resistivity and optical transparency of 85-90% has been used as major transparent conducting oxide (TCO) materials. However, due to the limited source, high price, and instability problems at high temperature of indium, many researches has been focused on indium-saving TCO materials. Mason Group of Northwestern University was reported to expand the solubility limit up to 40% by co-doping with 1:1 ratio of Zn+2 and Sn+4 ions. In this study, the properties of IZTO thin films corresponding to Zn/Sn different ratio were investigated. In addition, the effect of substrate temperature variable to the structural, optical and electrical properties of IZTO thin films was investigated.

Dye-sensitized solar cells (DSSCs) based on titanium dioxide (TiO2) have been extensively studied because of their promising low-cost alternatives to conventional semiconductor based solar cells. DSSCs consist of molecular dye at the interface between a liquid electrolyte and a mesoporous wide-bandgap semiconductor oxide. Most efforts for high conversion efficiencies have focused on dye and liquid electrolytes. However, interface engineering between dye and electrode is also important to reduce recombination and improve efficiency. In this work, for interface engineering, we deposited semiconducting ferroelectric BiFeO3 with bandgap of 2.8 eV on TiO2 nanoparticles and nanotubes. Photovoltaic properties of DSSCs were characterized as a function of thickness of BiFeO3. We showed that ferroelectric BiFeO3-coated TiO2 electrodes enable to increase overall efficiency of DSSCs, which was associated with efficient electron transport due to internal electric field originating from electric polarization. It was suggested that engineering the dye-TiO2 interface using ferroelectric materials as inorganic modifiers can be key parameter for enhanced photovoltaic performance of the cell.

In this study, KNbO3-substituted (Li,Na,K)(Nb,Sb,Ta)O3 ceramics were investigated to develop Pb-free composition ceramics for multilayer actuator and energy harvester applications. The X-ray diffraction analysis indicated that all samples were pure perovskite phase and no secondary phase was found. A tetragonality as a function of KNbO3 substitution showed the maximum value at 1.5 mol% KNbO3 and then decreased. The SEM image analysis showed the maximum grain size of 3.14 ㎛ at 1.5mol% KNbO3. In the composition ceramics with 1.5 mol% KNbO3 sintered at 1,100℃, excellent properties of density= 4.75 g/cm3, electromechanical coupling factor (kp)= 0.50 and piezoelectric constant(d33)= 290 pC/N were obtained, respectively, suitable for piezoelectric actuator and energy harvester applications.

In this study we aims to examine the effects of Co3O4 and NiO doping on the defects and electrical properties in ZnO-Bi2O3-Sb2O3 (Sb/Bi=0.5) varistors. It seemed to form □(0.20 eV) and □(0.33 eV) as dominant defects in Co and Ni co-doped ZBS system, however only □appeared in Co- or Ni-doped ZBS. Even though the same defects it was different in capacitance (1.5∼4.5 nF) and resistance (0.3∼9.5 kΩ). The varistor characteristics were improved with Co and Co+Ni doping (non-linear coefficient, α= 36 and 29, relatively) in ZBS. The various parameters (Nd= 1.43∼2.33×1017 cm-3, Nt=1.40∼ 2.28×1012 cm-2, Φb= 1.76∼2.37 V, W= 98∼118 nm) calculated from the C-V characteristics in our systems did not depend greatly on the type of dopant, which were in the range of a typical ZnO varistors. It should be derived a improved C-V equation carefully for more reliable parameters because the variation of the varistor capacitance as a function of the applied dc voltage is depend on the defect, frequency, and temperature.

Surface passivation of AlGaN/GaN heterojunction structure was examined through the thermal oxidation of evaporated Al. The Al-oxide passivation increased channel conductance of two dimensional electron gas (2DEG) on the AlGaN/GaN interface. The sheet resistance of 463 ohm/□ for 2DEG channel before Al2O3 passivation was decreased to 417 ohm/□ after passivation. The oxidation of Al induces tensile stress to the AlGaN/GaN structure and the stress seemed to enhance the sheet carrier density of the 2DEG channel. In addition, the Al2O3 films formed by thermal oxidation of Al suppressed thermal deterioration by the high temperature annealing.

In this study we aims to examine the co-doping effects of 1/3 mol% Mn3O4+Co3O4 (1:1) on the reaction, microstructure, and electrical properties such as the bulk defects and grain boundary properties of ZnO-Bi2O3-Sb2O3 (ZBS; Sb/Bi=0.5, 1.0, and 2.0) varistors. The sintering and electrical properties of Mn,Co-doped ZBS, ZBS(MCo) varistors were controlled by Sb/Bi ratio. Pyrochlore (Zn2Bi3Sb3O14) was decomposed and promoted densification at lower temperature on heating in Sb/Bi=1.0 by Mn rather than Co. Pyrochlore on cooling was reproduced in all systems however, spinel (α- or β-polymorph) did not formed in Sb/Bi=0.5. More homogeneous microstructure was obtained in Sb/Bi≥1.0. In ZBS(MCo), the varistor characteristics were improved drastically (non-linear coefficient, α=30∼49), and seemed to form (0.17 eV) and (0.33 eV) as dominant defects. From impedance and modulus spectroscopy (IS & MS), the grain boundaries have divided into two types, i.e. the one is tentatively assign to ZnO/Bi2O3(Mn,Co)/ZnO (0.47 eV) and the other ZnO/ZnO (0.80∼0.89 eV) homojunctions.

Recently, many lead-free piezoelectric materials have been investigated for the replacement of existing Pb-based piezoelectric ceramics because of globally increasing environmental interest. There has been remarkable improvement in piezoelectric properties of some lead-free ceramics such as (Bi, Na) Ti03-(Bi, K) Ti03-BaTiO3, (Na, K) Nb03-LiSbO3, and so on. However, no one still has comparable piezoelectric properties to lead-based materials. Therefore, new lead-free piezoelectric ceramics are required. BiFeO3 has a rhombohedrally distorted perovskite structure at room temperature and a very high Curie temperature (Tc=1,100 K). And a very large electric polarization of 50~60 uC/cm2 has been reported both in epitaxial thin film and single crystal BiFeO3. Therefore, a high piezoelectric effect is expected also in a BiFeO3 ceramics. The recent research activities on BiFeO3 or BiFeO3-based solid solutions are reviewed in this article.

Ordered mesoporous oxide films have been focused because of their low density, high interior specific surface area, and high thermal insulation. Specially, the ordered mesoporous oxide films prepared by self-assembly has many advantages due to easy process and high reproducibility. In this work, ordered mesoporous SiO2, Al2O3, and TiO2 films were synthesized by control of composition and processing parameter. Also, their structural, thermal, and mechanical properties were characterized variously. In conclusion, ordered mesoporous oxides will be one of core materials in new technology due to their excellent and unique properties.

The powders for the NaxWO3 (x= 1 and 0.75) sputtering targets were synthesized by the calcination in reductive atmosphere. Near single-phase NaWO3 and single-phase Na0.75WO3 powder targets were prepared. By using the targets, thin films of each composition were deposited by rf magnetron sputtering on the SiO2 (100 nm)/Si substrates and annealed by RTP (rapid thermal processing) for crystallization. In the case of the NaWO3 composition, single-phase NaxWO3 thin films, where x was believed to be slightly less than 1, were fabricated accompanying the Na-diffusion into the substrates during RTP. However, in the case of the Na0.75WO3 thin film preparation, it was unable to make single-phase thin films. From the phase formation behaviors of both powders and thin films, it was revealed that NaxWO3 with nonstoichiometric composition of x, which was slightly less than 1, was favorable. The good electrical conduction properties were obtained from the single-phase NaxWO3 thin films. Their electrical resistivities were as low as 7.5 × 10-4 Ω·cm.