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"Multi-layer"

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"Multi-layer"

Dielectric Characteristics of (BaCaSr)(TixZr1-x)O3 Dielectric Ceramic with Temperature Compensation Capacitor Characteristics
Yoo Jung Choi, Hong Sun Lee, Jung Rag Yoon
J Electr Electron Mater 2025;38(4):376-382.   Published online July 1, 2025
DOI: https://doi.org/10.4313/JKEM.2025.38.4.4
This study developed a dielectric composition for high-capacitance MLCCs with C0G and U2J temperature compensation characteristics (Class I) under reducing conditions. The potential application of this composition in highpermittivity class I MLCCs was examined. Using (Ba₀.₂₄Ca₀.₁₆Sr₀.₆)(TiₓZr₁₋ₓ)O₃. XRD analysis showed that secondary phases like Sr₂TiO₄ and TiO₂ formed at higher Ti content, affecting the stoichiometric balance. Adjusting the Ti/Zr molar ratio resulted in a dielectric constant of 41.2 ~ 105, a dielectric loss of 0.082 ~ 0.174%, and insulation resistance above 1.6 × 1013 ohms at 25℃. The TCC shifted from C0G to U2J as the Ti/Zr ratio increased, but the composition enabled the design of high-capacitance and high-voltage MLCCs with favorable dielectric and electrical properties.
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Electrical Properties of (Ba0.27CaSr)(Zr0.95Ti0.05)O₃ Dielectric Ceramic with C0G Temperature Characteristics
Hong Sun Lee, Jung Rag Yoon
J Electr Electron Mater 2024;37(6):662-667.   Published online November 1, 2024
DOI: https://doi.org/10.4313/JKEM.2024.37.6.13
In this study, the electrical properties of a C0G (class 1 ceramic) dielectric composition with internal reducibility, specifically (Ba0.27CaSr)(Zr0.95Ti0.05)O₃, were investigated by fixing Ba at the A site and varying the Ca/Sr molar ratio. The potential application of this composition in high-permittivity C0G MLCCs was examined. The powder was calcined at 1,150℃ for 2 hours, as determined by TG-DTA analysis, and the resulting powder was ground to achieve a particle size (D50) of 0.35 to 0.4 μm and a specific surface area (BET) of 4.5 to 5.0 g/m². With a Ca/Sr molar ratio of 0.3, the composition (Ba0.27Ca0.17Sr0.56) (Zr0.95Ti0.05)O₃ exhibited electrical properties with a permittivity of 41.9, a loss of less than 0.008%, and an insulation resistance exceeding 2.2×10¹³ Ω. The feasibility of using this composition for high-capacitance C0G MLCCs was confirmed.
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Optical Characteristics of Transparent Privacy Film with SiO2/SiON Multi-Layer
Hyeong Seok Sung, Jin Gu Kwon, Hee Il Chae, Hyeon Seong Han, Seong Eui Lee
J Electr Electron Mater 2019;32(4):287-295.   Published online July 1, 2019
Privacy films are typically manufactured by combining black resin and transparent louver-shaped patterns. The use of black resin results in excellent light-shielding. However, black resin can reduce the transmittance of privacy films at the front viewing angle. In this study, we applied SiO2/SiON multi-layer thin films on a privacy film to maintain transmittance at the front viewing angle and improve light-shielding at the side viewing angle. We determined the optimum combination of thicknesses of the SiO2/SiON multi-layer stacks to increase the overall transmittance; the light shielding could be maximized at the side viewing angle.
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Regular Paper : The Optical Properties of Si3N4/SnZnO/AZO/Ag/Ti/ITO Multi-layer Thin Films with Laminating Times
Sang Yun Lee, Gun Eik Jang
J Electr Electron Mater 2015;28(1):7-11.   Published online January 1, 2015
In this study, Si3N4/SnZnO/AZO/Ag/Ti/ITO multi-layer film were prepared on glass substrate by DC/RF magnetron sputtering method. To prevent interfacial reaction between Ag and ITO layer, Ti buffer layer was inserted. Optical properties and sheet resistance were studied depending on laminating times of each multi-layered film especially in visible ray. The simulation program, EMP (essentialmacleod program), was adopted and compared with experimental data to expect the experimental result. It was found out that the transmittance of the first stacked Si3N4/SnZnO/AZO/Ag/Ti/ITO multi-layer film was more than 90%. However, with increasing stacking times, the optical properties ofSi3N4/SnZnO/AZO/Ag/Ti/ITO multi-layer film get worse. Consequently, Ti layer is good for oxidation barrier, but too many uses of this layer may have an adverse effect to optical properties of TCO film.
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Regular Paper : Characteristic Analysis and Preparation of Multi-Layer TiNOx Thin Films for Solar-thermal Absorber
Dong Hyun Oh, Sang Uk Han, Hyun Hoo Kim, Gun Eik Jang, Yong Jun Lee
J Electr Electron Mater 2014;27(12):820-824.   Published online December 1, 2014
TiNOx multi-layer thin films on aluminum substrates were prepared by DC reactive magnetron sputtering method. 4 multi-layers of TiO2/TiNOx(LMVF)/TiNOx(HMVF)/Ti/substrate have been prepared with ratio of Ar and (N2+O2) gas mixture. TiO2 of top layer is anti-reflection layer on double TiNOx(LMVF)/TiNOx(HMVF) layers and Ti metal of infrared reflection layer. In this study, thecrystallinity and surface properties of TiNOx thin films were estimated by X-ray diffraction(XRD) and field emission scanning electron microscopy(FE-SEM), respectively. The grain size of TiNOx thin films shows to increase with increasing sputtering power. The composition of thin films has been investigated using electron probe microanalysis(EPMA). The optical properties with wavelength spectrum were recorded by UV-Vis-NIR spectrophotometry at a range of 200∼1,500 nm. The TiNOx multi-layer films show the excellent optical performance beyond 9% of reflectance in those ranges wavelength.
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Energy Materials : Properties and Preparation of AlNO Multi-layer Thin Films Using DC Magnetron Sputter Method
Hyun Hoo Kim, Dong Hyun Oh, Chan Soo Baek, Gun Eik Jang, Dong Ho Choi
J Electr Electron Mater 2014;27(9):589-593.   Published online September 1, 2014
AlNO multi-layer thin films on aluminum substrates were prepared by DC reactive magnetron sputtering method. Al2O3/AlNO(LMVF)/AlNO(HMVF)/Al/substrate of 4 multi-layer has been prepared in an Ar and (N2+O2) gas mixture, and Al2O3 of top layer is anti-reflection layer on double AlNO(LMVF)/AlNO(HMVF) layers and Al metal of infrared reflection layer. In this study, the roughness and surface properties of AlNO thin films were estimated by field emission scanning electron microscopy(FE-SEM). The grain size of AlNO thin films increased with increasing sputtering power. The composition of thin films has been systematically investigated using electron probe microanalysis(EPMA). The optical properties with wavelength spectrum were recorded by UV-Vis-NIR spectrophotometry at arange of 200~1,500 nm. The absorptance of AlNO films shows the increasing trend with swelling(N2+O2) gas mixture in HMVF and LMVF deposition. The excellent optical performance showed above98% of absorptance in visible wavelength region.
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Energy Materials : Multi-Layer Front Electrode Formation to Improve the Conversion Efficiency in Crystalline Silicon Solar Cell
Hee Eun Song, Ji Hwa Hong, Min Gu Kang, Nam Soo Kim
J Electr Electron Mater 2012;25(12):1015-1020.   Published online December 1, 2012
Resistance of the front electrode is the highest proportion of the ingredients of the series resistance in crystalline silicon solar cell. While resistance of the front electrode is decreased with larger area, it induces the optical loss, causing the conversion efficiency drop. Therefore the front electrode with high aspect ratio increasing its height and decreasing is necessary for high-efficiency solar cell in considering shadowing loss and resistance of front electrode. In this paper, we used the screen printing method to form high aspect ratio electrode by multiple printing. Screen printing is the straightforward technology to establish the electrodes in silicon solar cell fabrication. The several printed front electrodes with Ag paste on silicon wafer showed the significantly increased height and slightly widen finger. As a result, the resistance of the front electrode was decreased with multiple printing even if it slightly increased the shadowing loss. We showed the improved electrical characteristics for c-Si solar cell with repeatedly printed front electrode by 0.5%. It lays a foundation for high efficiency solar cell with high aspect ratio electrode using screen printing.
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Fabrication and Characterization of Multi-Layered Thick Films by Room Temperature Powder Spray in Vacuum Process
Dong Soo Park, Jung Ho Ryu, Cheol Woo Ahn, Jong Woo Kim, Jong Jin Choi, Woon Ha Yoon, Byung Dong Hahn, Joon Hwan Choi
J Electr Electron Mater 2012;25(8):584-592.   Published online August 1, 2012
Room temperature powder spray in vacuum process, so called Aerosol deposition (AD) is a room temperature (RT) process to fabricate thick and dense ceramic films, based on collision of solid ceramic particles. This technique can provide crack-free dense thin and thick films with thicknesses ranging from sub micrometer to several hundred micrometers with very fast deposition rates at RT. In addition, this technique is using solid particles to form the ceramic films at RT, thus there is few limitation of the substrate and easy to control the compositions of the films. In this article, we review the progress made in synthesis of piezoelectric thin/thick films, multi-layer structures, NTC thermistor thin/thick films, oxide electrode thin films for actuators or sensor applications by AD at Korea Institute of Materials Science (KIMS) during the last 4 years.
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Thin Films and Sensors : Characteristics Analysis of Total Internal Reflection-based Dielectric Multi-Layer Sensor Using Plasmonics Phenomena
Hong Seung Kim, Tae Kyeong Lee, Doo Gun Kim, You Ra Jung, Geum Yoon Oh, Byeong Hyeon Lee, Hyun Chul Ki, Young Wan Choi
J Electr Electron Mater 2012;25(7):516-520.   Published online July 1, 2012
In this paper, we have theoretically analyzed and designed a dielectric multi-layer sensor with a SPR (surface plasmon resonance) using analytical calculation and FDTD (finite difference time-domain) methods. The proposed structure is composed of periodic layer and thin metal film. It has many advantages. One of that is a high sensitivity of the SPR. Another is a high Q-factor of the characteristics in the PhC (photonic crystals) micro-cavity structure. The incident light has double resonance characteristics, because the filtered light by PhC structure, dielectric multi-layer, is met the thin metal film for SPR effect. We have also observed the change of resonance characteristics according to the variation of effective index on the metal film.
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Optical Characteristics of ZnS/CaF2/ZnS/Cu with Different Optical Thickness of CaF2 Layer
Jun Sik Kim, Gun Eik Jang
J Electr Electron Mater 2009;22(7):584-588.   Published online July 1, 2009
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The Optical properties of Fe2O3/Na3AlF6/Fe2O3/Cu, Al Cr Multi Layered Thin Film depending on the Optical Thickness
Jun Sik Kim, Gang Jae Jang, Gun Eik Jang
J Electr Electron Mater 2008;21(7):665-668.   Published online July 1, 2008
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Fabrication of LTCC Multi-layer Circuit Board made of Glass-Al2O3 Composites
Hun Kwak, Hyung Do Jeon, Hwan Kim, Won Jae Lee, Byoung Chul Shin, Il Soo Kim
J Electr Electron Mater 2008;21(6):509-516.   Published online June 1, 2008
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Improvement of Permeation of Solvent-free Multi-Layer Encapsulation of Thin Films on Polyethylene Terephthalate(PET)
J Electr Electron Mater 2006;19(8):754-757.   Published online August 1, 2006
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Improvement of Permeation of Applied Multi-Layer Encapsulation of Thin Films on Ethylene Terephthalate(PET)
J Electr Electron Mater 2006;19(3):255-259.   Published online March 1, 2006
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Multi-Layered Effect for the Insulation Design of a HTS Cable
J Electr Electron Mater 2005;18(10):950-955.   Published online October 1, 2005
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Characterization of the Annealing Effect of 0.5 % Ce-doped Ba(Zr0.2Ti0.8)O3 Thin Films Grown by RF Magnetron Sputtering Method
Won Seok Choi, Yang Seob Perk, Jun Sin Yi, Byung You Hong
J Electr Electron Mater 2003;16(5):361-364.   Published online May 1, 2003
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Optical Devices : Characteristics Investigation of ZnO-Si-ZnO Multi-layer Thin Films Fabricated by Pulsed Laser Deposition
Hong Seong Kang, Jeong Seok Kang, Eun Sub Shim, Seong Sik Pang, Sang Yeol Lee
J Electr Electron Mater 2003;16(1):65-69.   Published online January 1, 2003
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Electronic Ceramic : Effects of CuO on Low-temperature Sintering Characteristics of PSN-PZT System Ceramics
Ju Hyeon Lyu, Won Hui U, Dong Eon O, Yeong Ho Jeong, Gwang Hyeon Jeong, Mun Yeong Jeong, Hui Seung Jeong
J Electr Electron Mater 2003;16(12s):1200-1204.
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