Memristors, as next-generation memory devices, have garnered significant academic interest. Among them, TiO₂/TiO_2-x based memristors have particularly attracted substantial scholarly attention. Research on the activation and stability of TiO2 based memristor devices through process parameters is essential. Here, to determine the impact of process parameters on the activation of TiO₂/TiO_2-x based memristor devices, we fabricated the memristor devices using a sputtering system andconducted annealing at 400℃. Additionally, to analyze the electrical characteristics of the devices, we measured the I-V curves and C-V curves. Also, we examined TiO₂/TiO_2-x based memristor devices surface using SEM. Consequently, it was observed that the devices subjected to annealing exhibited improved hysteresis curves in the I-V characteristics, a reduced bandgap, and changes in resistance compared to the non-annealed devices. The retention test results further demonstrated that the set/reset characteristics of the devices were stable, confirming their potential applicability as memory devices.

To evaluate the possibility as a multi-level memory medium for the Ge2Sb2Te5/TiN/W-doped Ge2Sb2Te5 cell structure, the crystallization rate and stabilization characteristics according to voltage (V)- and current (I)- pulse sweeping were investigated. In the cell structures prepared by a magnetron sputtering system on a p-type Si (100) substrate, the Ge2Sb2Te5 and W-doped Ge2Sb2Te5 thin films were separated by a barrier metal, TiN, and the individual thicknesses were varied, but the total thickness was fixed at 200 nm. All cell structures exhibited relatively stable multi-level states of high-middle-low resistance (HR-MR-LR), which guarantee the reliability of the multilevel phase-change random access memory (PRAM). The amorphousto- multilevel crystallization rate was evaluated from a graph of resistance (R) vs. pulse duration (T) obtained by the nanoscaled pulse sweeping at a fixed applied voltage (12 V). For all structures, the phase-change rates of HR→MR and MR→LR were estimated to be approximately t<20 ns and t<40 ns, respectively, and the states were relatively stable. We believe that the doublestack structure of an appropriate Ge-Sb-Te film separated by barrier metal (TiN) can be optimized for high-speed and stable multilevel PRAM.

The report reviews recent research efforts in demonstrating a computing system whose operation principle mimics the dynamics of biological neurons. The temporal variation of the membrane potential of neurons is one of the key features that contribute to the information processing in the brain. We first summarize the neuron models that explain the experimentally observed change in the membrane potential. The function of ion channels is briefly introduced to understand such change from the molecular viewpoint. Dedicated circuits that can simulate the neuronal dynamics have been developed to reproduce the charging and discharging dynamics of neurons depending on the input ionic current from presynaptic neurons. Key elements include volatile memristors that can undergo volatile resistance switching depending on the voltage bias. This behavior called the threshold switching has been utilized to reproduce the spikes observed in the biological neurons. Various types of threshold switch have been applied in a different configuration in the hardware demonstration of neurons. Recent studies revealed that the memristor-based circuits could provide energy and space efficient options for the demonstration of neurons using the innate physical properties of materials compared to the options demonstrated with the conventional complementary metal-oxidesemiconductors (CMOS).

We were designed the hole transport layer of the new composite skeleton structure having a high charge mobility and thermal stability. In this paper, a hole transport layer material based on thiophene molecular structure capable of hole mobility characteristics and high triplet energy was designed and synthesized. The structures and properties of the synthesized compounds were characterized by NMR, fluorescence spectroscopy and energy band gap. As a result of NMR measurement, it was confirmed that when analyzing the integrated type with the position where the measured peak is displayed, it agrees with the structure of hole transport materials. The emission characteristics of the hole transport layer material showed absorption characteristics at 412 nm and 426 nm, respectively, and exhibited emission characteristics in the range of 469 nm and 516 nm.

This paper presents an electrical feature analysis of hysteresis curves in memristor differential and intergral control circuit. After making macro model of the memristor device, electric characteristics of the model such as time analysis, frequency dependent DC I-V curves were performed by PSPICE simulation. Also, we made a circuit of memristor-capacitor based on nano-wired memristor device and analyzed the simulated PSPICE results. Finally, we proposed a memristor based differential or integral control circuit, analyzed hysteresis curve characteristic in the control circuit.

This paper conducted a study on how the heat radiation of light emitting diode (LEI)) luminaires affects the indoor temperature increase. The effect was compared with that of a 20 W compact fluorescent lamp (CFL) and a 50 W MuG halogen lamp which are most widely used inside of cruises, a LED downlight and a 4W MRI6 LED replacing each of them. We installed a luminarie inside a thermally shielded chamber, measuring the temperature changes under the same volume every 5 minutes and compared the result with theoretically calculated heat radiation, The temperature changes in the chamber was measured four times, on seven hours` period in order to keep sufficient time once the temperature reaches the thermal equilibrium state. The results showed that the temperature of the 20 W E26 CFL and the 10 W LED downlight increased by 21,1`C and 10.4t respectively, while that of the 50 W halogen MRI6 and the 4 W LED MR16 increased by 33.9t and 4.8t respectively. The experimental heat radiation were calculated from the results and the experimental heat radiation of the CFL and the LED downlight were 171.5 cal and 86.5 cal, and those of the halogen MR16 and the LED MR16 were 275.3 cal and 36.5 cal, Therefore, the heat radiation was reduced by 49.5% and 86.7%, respectively, by replacing conventional light source with LED. In conclusion, we can expect a reduction of power consumption in air condition system and the effect on indoor temperature increase by application of LED luminaires.

In this study, we intended to design the optimal Fermi filter to apply the k-space date that is knee image of the rheumatoid arthritis patient acquired from the MRI (magnetic resonance imaging) instrument. After deciding the suitable coefficient for the Fermi filter, the results were compared with modified Fermi filter and inverse Chebyshev filter, Chebyshev filter, Elliptic filter and Butterworth filter. Firstly, in comparison to the results, the radiologist confirmed that modified Fermi filter was best decision for boundary of the rheumatoid arthritis images. The number of the black voxels of the histogram showed the quantity of the results. At the proposed filter images, numbers of the blacks voxels were statistically decreased. That meant voxels only appeared the black color were changed to others voxels color. Because the number of the total voxels was fixed, the area appeared block color could be effected to the other areas. If the modified Fermi filter were used for rheumatoid arthritis patient, the result will be better than other filters.