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J Electr Electron Mater : Journal of Electrical and Electronic Materials

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"HBT"

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"HBT"

Electrical Properties of SiGe HBTs designed with Bottom Collector and Single Metal Layer Structures
J Korean Inst Electr Electron Mater Eng 2007;20(8):661-665.   Published online August 1, 2007
DOI: https://doi.org/10.4313/JKEM.2007.20.8.661
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RBS Analysis on the Si0.9Ge0.1 Epitaxial Layer for the Fabrication of SiGe HBT
J Korean Inst Electr Electron Mater Eng 2004;17(9):916-923.   Published online September 1, 2004
DOI: https://doi.org/10.4313/JKEM.2004.17.9.916
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Fabrication and characterization of the SiGe HBTs using an RPCVD
J Korean Inst Electr Electron Mater Eng 2004;17(8):823-829.   Published online August 1, 2004
DOI: https://doi.org/10.4313/JKEM.2004.17.8.823
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Optimal Thermal Resistance Extraction Method for the Current Source Model of HBT
Yeong Seog Seo, In Seong Kim, Jae Seong Song, Hyo Deog Nam
J Korean Inst Electr Electron Mater Eng 2004;17(4):367-372.   Published online April 1, 2004
DOI: https://doi.org/10.4313/JKEM.2004.17.4.367
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