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SiGe HBT 제작을 위한 실리콘 게르마늄 단결정 박막의 RBS 분석

한태현, 안호명, 서광열

RBS Analysis on the Si0.9Ge0.1 Epitaxial Layer for the Fabrication of SiGe HBT

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J Electr Electron Mater 2004;17(9):916-923.
Published online: September 1, 2004
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RBS Analysis on the Si0.9Ge0.1 Epitaxial Layer for the Fabrication of SiGe HBT
J Electr Electron Mater. 2004;17(9):916-923.   Published online September 1, 2004
Download Citation

Download a citation file in RIS format that can be imported by all major citation management software, including EndNote, ProCite, RefWorks, and Reference Manager.

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Include:
RBS Analysis on the Si0.9Ge0.1 Epitaxial Layer for the Fabrication of SiGe HBT
J Electr Electron Mater. 2004;17(9):916-923.   Published online September 1, 2004
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