Fabrication and characterization of the SiGe HBTs using an RPCVD

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RPCVD를 이용한 실리콘 게르마늅 이종 접합 바이폴라 트랜지스터 제작 및 특성 분석

한태현, 서광열

Fabrication and characterization of the SiGe HBTs using an RPCVD

J Electr Electron Mater 2004;17(8):823-829.
Published online: August 1, 2004

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Keywords: SiGe, SiGe HBT, RPCVD, IDP

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Fabrication and characterization of the SiGe HBTs using an RPCVD

J Electr Electron Mater. 2004;17(8):823-829. Published online August 1, 2004

Download Citation

Download a citation file in RIS format that can be imported by all major citation management software, including EndNote, ProCite, RefWorks, and Reference Manager.

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bib — For JabRef, BibDesk, and other BibTeX-specific software

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Fabrication and characterization of the SiGe HBTs using an RPCVD

J Electr Electron Mater. 2004;17(8):823-829. Published online August 1, 2004

Articles

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RPCVD를 이용한 실리콘 게르마늅 이종 접합 바이폴라 트랜지스터 제작 및 특성 분석

Fabrication and characterization of the SiGe HBTs using an RPCVD

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