Metal sacrificial-layer-assisted transfer is a promising strategy for transferring thermally annealed thin films onto flexible polymer substrates without exposing the receiver substrate to thermal damage. However, stable release of the annealed thin-film stack remains challenging because high-temperature annealing can alter the etching behavior of the sacrificial metal layer and the protective oxide layer. In this study, we propose a thin-film transfer process using a Ni metal sacrificial layer and etch access holes, in which an SU-8/Ti/SiO₂ transferable stack was fabricated on a rigid sapphire donor substrate, annealed at 400–700°C, selectively released by Ni etching, and transferred onto a flexible PET receiver substrate. As the annealing temperature increased from 400 to 700°C, the SiO₂ etch rate decreased from 6.8–6.96 to 2.61–3.83 nm/s, while the Ni release time increased from 72–77 to 82–95 min; nevertheless, the transferable stack was successfully transferred under all process conditions with image-based transfer yields of 58.81–82.76%, with the highest yield obtained for the 200 nm Ni sacrificial layer annealed at 550°C. These results demonstrate the process feasibility of the proposed metal sacrificial-layer and etch-access-hole-based transfer approach for transferring thermally annealed thin-film structures from rigid donor substrates to flexible receiver substrates.

As technologies such as artificial intelligence, autonomous driving, the Internet of Things, wearable electronics, and edge computing continue to spread in the era of the Fourth Industrial Revolution, the importance of hardware security for the safe storage, transmission, and processing of large volumes of data has grown substantially. One of the key components of such security systems is the true random number generator (TRNG), which produces unpredictable random numbers for cryptographic use. In recent years, research on TRNGs has increasingly moved beyond conventional CMOS-based approaches toward semiconductor devices built from emerging materials. These material-based TRNGs offer several advantages, including high integration density, low power consumption, compact form factors, and strong suitability for next-generation edge and IoT environments, because they can directly exploit the intrinsic stochasticity of the device itself as an entropy source. In this review, recent studies on TRNGs based on emerging material-based semiconductor devices are examined from the perspectives of entropy sources, device structures, randomness validation, and wearable/flexible extensions. By bringing together the key physical mechanisms, device platforms, evaluation criteria, and prospects for wearable and flexible electronics in edge and IoT environments, this review aims to provide a useful framework for future research on hardware security devices.

Smart electronic skin (E-skin) is an emerging technology that integrates electronic devices with human skin, enhancing human-machine interactions. One critical challenge in its development is effective thermal management to ensure device reliability, longevity, and user comfort. This review highlights passive cooling techniques - thermal conduction, convection, radiation, and phase-change materials - as key strategies to address this challenge without additional power consumption. These integrated mechanisms have demonstrated the ability to efficiently dissipate heat, preventing thermal buildup and maintaining optimal performance in E-skin devices. Recent advancements indicate that combining these methods can significantly enhance the thermal management of flexible electronics. Future research should focus on refining these materials and techniques to overcome challenges related to cost, durability, and environmental stability, thereby advancing the practical application of E-skin technology.

Citations

• Wearable sweat glucose monitoring patches enabled by double network hydrogel-MoS2/PEDOT: PSS nanocomposite
  Suraj Shinde, Omkar A. Patil, Sang Yoon Park, Se Jin Choi, Omkar Pawar, Daniel J. Joe, Sooman Lim, Han Eol Lee
  Microchemical Journal.2025; 215: 114309.     CrossRef

Laser-induced plasmonic sintering of metal nanoparticles (NPs) holds significant promise as a technology for producing flexible conducting electrodes. This method offers immediate, straightforward, and scalable manufacturing approaches, eliminating the need for expensive facilities and intricate processes. Nevertheless, the metal NPs come at a high cost due to the intricate synthesis procedures required to ensure long-term reliability in terms of chemical stability and the prevention of NP aggregation. Herein, we induced the self-generation of metal nanoparticles from Ag organometallic ink, and fabricated highly conductive electrodes on flexible substrates through laser-assisted plasmonic annealing. To demonstrate the practicality of the fabricated flexible electrode, it was configured in a mesh pattern, realizing multi-touchable flexible touch screen panel.

Citations

• Controlling Structures and Properties of NaCl‐Containing Alginate/Polyacrylamide Tough Hydrogels via a One‐Pot Process
  Taeuk Eom, Hyunseung Kim, Jihun Choi, Soon Joo Yoon, Yoon Kyeung Lee, Kwi‐Il Park, Chang Kyu Jeong
  Chemistry – A European Journal.2026;[Epub]     CrossRef
• Wearable sweat glucose monitoring patches enabled by double network hydrogel-MoS2/PEDOT: PSS nanocomposite
  Suraj Shinde, Omkar A. Patil, Sang Yoon Park, Se Jin Choi, Omkar Pawar, Daniel J. Joe, Sooman Lim, Han Eol Lee
  Microchemical Journal.2025; 215: 114309.     CrossRef

In this study, we developed the solution-processed PMMA-HfOx hybrid ReRAM devices to overcome the respective drawbacks of organic and inorganic materials. The performances of PMMA-HfOx hybrid ReRAM were compared to those of PMMA- and HfOx-based ReRAMs. Bipolar resistive switching behavior was observed from these ReRAMs. The PMMA-HfOx hybrid ReRAMs showed a larger operation voltage margin and memory window than PMMA-based and HfOx-based ReRAMs. The reliability and electrical instability of ReRAMs were remarkably improved by blending the HfOx into PMMA. An Ohmic conduction path was commonly generated in the LRS (low resistance state). In HRS (high resistance state), the PMMA-based ReRAM showed SCLC (space charge limited conduction). the PMMA-HfOx hybrid ReRAM and HfOx-based ReRAM revealed the Pool-Frenkel conduction. As aresult of flexibility test, serious defects were generated in HfOx film deposited on PI (polyimide) substrate. On the other hand, the PMMA and PMMA-HfOx films showed an excellent flexibility without defect generation.