In this study, we developed the solution-processed PMMA-HfOx hybrid ReRAM devices to overcome the respective drawbacks of organic and inorganic materials. The performances of PMMA-HfOx hybrid ReRAM were compared to those of PMMA- and HfOx-based ReRAMs. Bipolar resistive switching behavior was observed from these ReRAMs. The PMMA-HfOx hybrid ReRAMs showed a larger operation voltage margin and memory window than PMMA-based and HfOx-based ReRAMs. The reliability and electrical instability of ReRAMs were remarkably improved by blending the HfOx into PMMA. An Ohmic conduction path was commonly generated in the LRS (low resistance state). In HRS (high resistance state), the PMMA-based ReRAM showed SCLC (space charge limited conduction). the PMMA-HfOx hybrid ReRAM and HfOx-based ReRAM revealed the Pool-Frenkel conduction. As aresult of flexibility test, serious defects were generated in HfOx film deposited on PI (polyimide) substrate. On the other hand, the PMMA and PMMA-HfOx films showed an excellent flexibility without defect generation.
