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FBAR
WHERE t1.sid in(parameter_dbtbl_keyword '%FBAR%') and t1.xml_status <> 99
8
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"FBAR"
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Keywords
FBAR (8)
ZnO (4)
2-step deposition (1)
ALD (1)
Annealing temperature (1)
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2007 (2)
2005 (2)
2003 (3)
2002 (1)
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Myeong Gyu Choe (1)
Hyeong Ug Choe (1)
Seung Hyeog Choe (1)
Sun Nam Chu (1)
Min Jong Geum (1)
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FBAR (8)
ZnO (4)
2-step deposition (1)
ALD (1)
Annealing temperature (1)
Atomic Layer deposition (1)
C-axis orientation (1)
Film bulk acoustic resonator (1)
Flexible microsystems (1)
Frequency characteristic (1)
FTS (1)
Li2CO3:ZnO (1)
Membrane (1)
MMIC (1)
Piezoelectric (1)
Piezoelectric Layer (1)
Preferred orientation (1)
Resonator (1)
RF magnetron sputtering (1)
SMR (1)
SOI (1)
Substrate temperature (1)
Surface roughness (1)
Thin wafer (1)
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authors
Myeong Gyu Choe (1)
Hyeong Ug Choe (1)
Seung Hyeog Choe (1)
Sun Nam Chu (1)
Min Jong Geum (1)
Byeong Kwon Ju (1)
Byeong Gwon Ju (1)
Yu Li Kang (1)
In Tae Kim (1)
Nam Soo Kim (1)
Gyeong Hwan Kim (1)
Jong Seong Kim (1)
Yong Gug Kim (1)
Su Won Kim (1)
Si Hyung Lee (1)
Yun Hi Lee (1)
Jeon Kook Lee (1)
Yun Kwon Park (1)
Yeong Hwa Sin (1)
In Hwan Son (1)
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2005 (2)
2003 (3)
2002 (1)
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"FBAR"
Dependences of Various Substrate Temperature on the Structural and Electrical Properties of ZnO Thin Films deposited by RE Magnetron Sputtering
J Korean Inst Electr Electron Mater Eng
2007;20(11):965-968.
Published online November 1, 2007
DOI:
https://doi.org/10.4313/JKEM.2007.20.11.965
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53
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Fabrication of Li2CO3-doped ZnO Thin Film Bulk Acoustic Resonator and Structural, Electrical Properties as a Function of Annealing Temperatures
J Korean Inst Electr Electron Mater Eng
2007;20(2):152-155.
Published online February 1, 2007
DOI:
https://doi.org/10.4313/JKEM.2007.20.2.152
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52
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Characteristics of ZnO Thin Films of FBAR using ALD and RE Magnetron Sputtering
J Korean Inst Electr Electron Mater Eng
2005;18(2):164-168.
Published online February 1, 2005
DOI:
https://doi.org/10.4313/JKEM.2005.18.2.164
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57
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Characteristics of ZnO Thin Film for SMR-typed FBAR Fabrication
J Korean Inst Electr Electron Mater Eng
2005;18(2):159-163.
Published online February 1, 2005
DOI:
https://doi.org/10.4313/JKEM.2005.18.2.159
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56
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A Study on the Deposition Characteristics of ZnO Piezoelectric Thin Film Bulk Acoustic Resonator
Seung Hyeog Choe, Jong Seong Kim
J Korean Inst Electr Electron Mater Eng
2003;16(8):716-722.
Published online August 1, 2003
DOI:
https://doi.org/10.4313/JKEM.2003.16.8.716
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57
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A Study of the Crystallographic Properties of ZnO/SiO2/Si Thin Film for FBAR
Min Jong Geum, In Hwan Son, Myeong Gyu Choe, Sun Nam Chu, Hyeong Ug Choe, Yeong Hwa Sin, Gyeong Hwan Kim
J Korean Inst Electr Electron Mater Eng
2003;16(8):711-715.
Published online August 1, 2003
DOI:
https://doi.org/10.4313/JKEM.2003.16.8.711
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53
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Monolithic Film Bulk Acoustic Wave Resonator using SOI Wafer
In Tae Kim, Yun Kwon Park, Si Hyung Lee, Yun Hi Lee, Jeon Kook Lee, Nam Soo Kim, Byeong Kwon Ju
J Korean Inst Electr Electron Mater Eng
2002;15(12):1039-1044.
Published online December 1, 2002
DOI:
https://doi.org/10.4313/JKEM.2002.15.12.1039
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61
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Design and Fabrication of Film Bulk Acoustic Resonator for Flexible Microsystems
Yu Li Kang, Yong Gug Kim, Su Won Kim, Byeong Gwon Ju
J Korean Inst Electr Electron Mater Eng
2003;16(12s):1224-1231.
DOI:
https://doi.org/10.4313/JKEM.2003.16.12s.1224
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60
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