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"CMOSFET"

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"CMOSFET"

Dependence of Device Performance and Reliability on Chanel Direction in PMOSFET`s
Jung Deuk Bok, Ye Ji Park, In Shik Han, Hyuk Min Kwon, Byoung Seok Park, Sang Uk Park, Min Gyu Lim, Yi Sun Chung, Jung Hwan Lee, Hi Deok Lee
J Korean Inst Electr Electron Mater Eng 2010;23(6):431-435.   Published online June 1, 2010
DOI: https://doi.org/10.4313/JKEM.2010.23.6.431
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Thermal Stability Improvement of Ni-Suicide using Ni-Co alloy for Nano-scale CMOSFET
J Korean Inst Electr Electron Mater Eng 2008;21(1):18-22.   Published online January 1, 2008
DOI: https://doi.org/10.4313/JKEM.2008.21.1.018
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Dependency of the Device Characteristics on Plasma Nitrided Oxide for Nano-scale PMOSFET
J Korean Inst Electr Electron Mater Eng 2007;20(7):569-574.   Published online July 1, 2007
DOI: https://doi.org/10.4313/JKEM.2007.20.7.569
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Improving the Thermal Stability of Ni-silicide using Ni-V on Boron Cluster Implanted Source/drain for Nano-scale CMOSFETs
J Korean Inst Electr Electron Mater Eng 2007;20(6):487-490.   Published online June 1, 2007
DOI: https://doi.org/10.4313/JKEM.2007.20.6.487
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Dependence of Low-frequency Noise and Device Characteristics on Initial Oxidation Method of Plasma-nitride Oxide for Nano-scale CMOSFET
J Korean Inst Electr Electron Mater Eng 2007;20(1):1-7.   Published online January 1, 2007
DOI: https://doi.org/10.4313/JKEM.2007.20.1.001
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Thermal Stability Improvement of Ni-Silicide on the SOI Substrate Doped B11 for Nano-scale CMOSFET
J Korean Inst Electr Electron Mater Eng 2006;19(11):1000-1004.   Published online November 1, 2006
DOI: https://doi.org/10.4313/JKEM.2006.19.11.1000
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A Stacked Polusilicon Strucutre by Nitridation in N2 Atmosphere for Nano-scale CMOSFETs
J Korean Inst Electr Electron Mater Eng 2005;18(11):1001-1006.   Published online November 1, 2005
DOI: https://doi.org/10.4313/JKEM.2005.18.11.1001
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