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J Electr Electron Mater : Journal of Electrical and Electronic Materials

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"CLD"

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"CLD"

Fabrication Of Ultraviolet LED Light Source Module Of Current Limiting Diode Circuit By Using Flip Chip Micro Soldering
Jong Min Park, Soon Jae Yu, Anil Kawan
J Electr Electron Mater 2016;29(4):237-240.   Published online April 1, 2016
The improvement of irradiation intensity and irradiation uniformity is essential for large area and high power UVA light source application. In this study, large number of chips bonded by micro soldering technique were driven by low current, and current limiting diodes were configured to supply constant current to parallel circuits consisting of large number of series strings. The dimension of light source module circuit board was 350 × 90 mm2 and 16,650 numbers of 385 nm flip chip LEDs were used with a configuration of 90 parallel and 185 series strings. The space between LEDs in parallel and series strings were maintained at 1.9 mm and 1.0 mm distance, respectively. The size of the flip chip was 750 × 750 μm2 were used with contact pads of 260 × 669 μm2 size, and SAC (96.5 Sn/3.0 Ag/0.5 Cu) solder was used for flip chip bonding. The fabricated light source module with 7.5 m A supply current showed temperature rise of 66℃, whereas irradiation was measured to be 300 mW/cm2. Inaddition, 0.23% variation of the constant current in each series string was demonstrated.
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Light Source and Application Technology : Regular Paper; Applications of Current Limiting Diode to chip on Board Type Light Source and Lighting Equipment Circuits
Hwa Jin Park, S J Yu, Jong Min Park, Y J Kim
J Electr Electron Mater 2013;26(6):488-492.   Published online June 1, 2013
Current limiting diode (CLD) was fabricated using junction field effect transistor (JFET) structured two small cells and eight large cells. Two small cells and eight large cells were connected in parallel and the obtained constant current was 110 mA. The application of CLD in each of the parallel circuits on chip on board (COB) type LED lighting source, could significantly reduce the current deviation within the parallel circuits. The applications of CLD on AC power small lighting source, battery power low voltage parallel lighting source and AC flat lighting source were investigated.
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Display and Optical Devices : Fabrication of Current Intensity Convertible CLD of Large Current Intensity for LED Network Application
Hwa Jin Park, S J Yu, K Anil, Yong Gon Yi, J H Kim, T S Han
J Electr Electron Mater 2012;25(9):723-726.   Published online September 1, 2012
A current intensity convertible CLD chip was fabricated using small and large FET cell configuration. Pinch off current of 8.82mA and 11.56mA were obtained for small and large cell in the CED chip, respectively. Constant current was fairly maintained until the breakdown voltage of 60 V, Measured knee voltage, Vk were 3.8 V and 4.5 V for small and large cell, respectively. We configured current amplifying chip with parallel connection of each cells, by connecting 8 individual large cells in parallel network, 92.0mA of current was obtained. The pinch off constant current of CLD chip was varied very linearly with respect to the number of parallel connected cell.
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