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J Electr Electron Mater : Journal of Electrical and Electronic Materials

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디스플레이·광소자 : 전류세기 조정이 가능한 대전력 발광다이오드 광원 회로용 정전류 다이오드 제작

박화진, 유순재, 유순재, 이용곤, 김진형, 한태수

Display and Optical Devices : Fabrication of Current Intensity Convertible CLD of Large Current Intensity for LED Network Application

Hwa Jin Park, S J Yu, K Anil, Yong Gon Yi, J H Kim, T S Han
J Electr Electron Mater 2012;25(9):723-726.
Published online: September 1, 2012
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A current intensity convertible CLD chip was fabricated using small and large FET cell configuration. Pinch off current of 8.82mA and 11.56mA were obtained for small and large cell in the CED chip, respectively. Constant current was fairly maintained until the breakdown voltage of 60 V, Measured knee voltage, Vk were 3.8 V and 4.5 V for small and large cell, respectively. We configured current amplifying chip with parallel connection of each cells, by connecting 8 individual large cells in parallel network, 92.0mA of current was obtained. The pinch off constant current of CLD chip was varied very linearly with respect to the number of parallel connected cell.

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Display and Optical Devices : Fabrication of Current Intensity Convertible CLD of Large Current Intensity for LED Network Application
J Electr Electron Mater. 2012;25(9):723-726.   Published online September 1, 2012
Download Citation

Download a citation file in RIS format that can be imported by all major citation management software, including EndNote, ProCite, RefWorks, and Reference Manager.

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Display and Optical Devices : Fabrication of Current Intensity Convertible CLD of Large Current Intensity for LED Network Application
J Electr Electron Mater. 2012;25(9):723-726.   Published online September 1, 2012
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