Donghun Lee, Seongmin Jeong, Hak Su Jang, Dongju Ha, Dong Yeol Hyeon, Yu Mi Woo, Changyeon Baek, Min-ku Lee, Gyoung-ja Lee, Jung Hwan Park, Kwi-il Park
J Electr Electron Mater 2024;37(4):427-432. Published online July 1, 2024
The polymer crystallization process, promoting the formation of ferroelectric β-phase, is essential for developing polyvinylidene fluoride (PVDF)-based high-performance piezoelectric energy harvesters. However, traditional high-temperature annealing is unsuitable for the manufacture of flexible piezoelectric devices due to the thermal damage to plastic components that occurs during the long processing times. In this study, we investigated the feasibility of introducing a flash lamp annealing that can rapidly induce the β-phase in the PVDF layer while avoiding device damage through selective heating. The flash lightirradiated PVDF films achieved a maximum β-phase content of 76.52% under an applied voltage of 300 V and an on-time of 1.5 ms, a higher fraction than that obtained through thermal annealing. The PVDF-based piezoelectric energy harvester with the optimized irradiation condition generates a stable output voltage of 0.23 V and a current of 102 nA under repeated bendings. These results demonstrate that flash lamp annealing can be an effective process for realizing the mass production of PVDF-based flexible electronics.
Flash lamp annealing (FLA) of metal nanoparticle (NP) ink has provided powerful strategies to fabricate highperformance electrodes on a flexible substrate because of its rapid processing capability (in milliseconds), low-temperature process, and compatibility with to roll-to-roll process. However, metal NPs [e.g., gold (Au), silver (Ag), copper (Cu), etc.] have limitations such as difficulty in synthesizing fine metal NPs (diameter less than 10 nm), high price, and degradation during ink storage and FLA processing. In this regard, organometallic ink has been proposed as a material that can replace metal NPs due to their low-cost (usually 1/100 times cheaper than metal nano inks), low-temperature processability, and high material stability. Despite these advantages, the fabrication of flexible electrodes through FLA treatment of organometallic compounds has not been extensively researched. In this paper, we experimentally guide how to determine the optimal conditions for forming electrodes on flexible substrates by considering material parameters, and flashlight processing parameters (energy density, pulse duration, etc) to minimize the difficulties that may arise during the FLA of organometallic ink.
This paper demonstrates a novel NAND flash memory structure and annealing configuration including through-silicon via (TSV) inside the silicon substrate to improve annealing efficiency using an electro-thermal annealing (ETA) technique. Compared with the conventional ETA which utilizes WL-to-WL current flow, the proposed annealing method has a higher annealing temperature as well as more uniform heat distribution, because of thermal isolation on the silicon substrate. In addition, it was found that the annealing temperature is related to the electrical and thermal conductivity of the TSV materials. As a result, it is possible to improve the reliability of NAND flash memory. All the results are discussed based on 3-dimensional (3-D) simulations with the aid of the COMSOL simulator.
The electro-thermal erasing (ETE) configuration utilizes Joule heating intentionally generated at word-line (WL). The elevated temperature by heat physically removes stored electrons permanently within a very short time. Though the ETE configuration is a promising next generation NAND flash memory candidate, a consideration of power efficiency and erasing speed with respect to device structure and its scaling has not yet been demonstrated. In this context, based on 3-dimensional (3-D) thermal simulations, this paper discusses the impact of device structure and scaling on ETE efficiency. The results are used to produce guidelines for ETEs that will have lower power consumption and faster speed.
Although waste oil derived fuel (WDF) production technology was developed under a government initiative ~10 years ago, it became stagnant owing to the small size of participating companies, residents’ rejection of foul odor, and the nature of the technology for recycling waste that was avoided. However, this subject is under the spotlight again because of recent developments, such as garbage crisis. In particular, plastic is the most difficult waste to dispose of, with more than 4 million tons of plastic waste produced every year according to statistics from the Ministry of Environment. The most effective method for treating plastic waste is to produce WDF through low temperature thermal decomposition. The WDF includes several volatile ingredients that mostly limit the use of fuel for boilers, owing to safety concerns. In particular, flash point is legally stipulated because of secondary contamination in the distribution process and the risk of fire and explosion. It is required that external shipments (distribution) should be maintained in the range of at least 30~60℃ (excluding explosion prevention facilities) for diesel power generation. Therefore, this study seeks to find the flash point that is best suited to WDFs produced from plastic waste.
Porcelain insulators are typically exposed to surface discharge and lightning impulse in service. This study investigates the insulation characteristics of the external and internal discharges of a porcelain insulator with respect to its flashover for a 154 kV transmission line. The experiments are also conducted using a wet flashover test and an impulse test based on the external discharge and the internal penetration, to classify the flashover voltage-time curve of the porcelain insulator. When an impulse with a strength of 2,500 kV/μs was applied three times to 6.5 mm ceramic samples, electrical penetration of approximately 70% occurred. The impulse experiment confirmed that the electrical penetration inside the porcelain insulator coincided with the area where the electric field was concentrated. The wet flashover voltage test revealed that the flashover threshold voltage increases by approximately 7% after cleaning of the surface.
Recently, there has been an increasing interest in the use of graphene as electrode materials for supercapacitors. In this regard, graphene oxide (GO) films were prepared using GO slurry obtained by dispersing GO powder in deionized (DI) water. The degree of dispersion of GO powder in DI water depends on the concentration of GO slurry, pH, impurity content, GO particle size, types of functional groups contained in GO, and manufacturing method of GO powder. In this study, the dispersivity of the GO powder was improved by adjusting the pH using only DI water (without additives), and a uniform GO film was obtained. The GO film was reduced by exposure to xenon intense pulsed light for a few milliseconds, and the reduced GO film was used as electrodes of a supercapacitor. The supercapacitor was characterized using cyclic voltammetry (CV), charge-discharge cycle, and electrochemical impedance spectroscopy measurements, and the specific capacitance of the supercapacitor was found to be ~140 F/g from the CV data.
Insulators used in overhead transmission lines are continuously exposed to a number of mechanical and electrical stresses owing to external environmental factors, resulting in corrosion, reduction in durability, and deterioration. Widely used porcelain insulators are fabricated with cement and porcelain and are especially common in Korea. Changes in the hardness and chemical reactivity of the cement increase the leakage and fault currents and increase the possibility of flashover due to insulation breakdown. Therefore, it is important to evaluate the durability and defects of porcelain insulators. Studies on the reliability of various evaluation methods are needed to prevent accidents by accurately determining the replacement timing and potential defects in porcelain insulators. In this study, the hardness of the cement part of the porcelain insulator was measured using the Vickers hardness test and its composition was analyzed by energy dispersive spectroscopy and X-ray diffraction analysis. The performance of the insulators was compared in two different regions with varying climatic conditions. This study presents an evaluation method of the defects in porcelain insulators by measuring humidity, which can also be used to assess the reliability of the insulators.
Recently, ultrasound, infrared detector, V-I characteristic, gas analysis, UV (ultra-violet rays) camera etc. is used as inspections and diagnoses of the safety of power equipment. Especially, UV camera have attracted a great deal of interest from the view point of easy judgement. UV camera is used corona discharge. One of the most important and difficult problems to be solved filer design, materials and corona discharge. This paper is studied on the temperature characteristics, UV generation and shape analysis and corona pulse count according to the electrode distance and applied voltage. Also, Corona discharge characteristics in air are analyzed using prototype UV camera of Korea. UV generation due to surface discharge of AC is higher than that of DC.
In this paper, Fin-type silicon-oxide-nitride-oxide-silicon (SONOS) flash memory are fabricated and the electrical characteristics are analyzed. Compared to the planar-type SONOS devices, Fin-type SONOS devices show good short channel effect (SCE) immunity due to the enhanced gate controllability. In memory characteristics such as program/erase speed, endurance and data retention, Fin-type SONOS flash memory are also superior to those of conventional planar-type. In addition, Fin-type SONOS device shows improved SCE immunity in accordance with the decrease of Fin width. This is known to be due to the fully depleted mode operation as the Fin width decreases. In Fin-type, however, the memory characteristic improvement is not shown in narrower Fin width. This is thought to be caused by the Fin structure where the electric field of Fin top can interference with the Fin side electric field and be lowered.