Al-Mo thin films were fabricated using combinatorial sputtering system to realize highly sensitive surface acoustic wave (SAW) devices. The Al-Mo sample library was grown with various chemical compositions and electrical resistivities, which provided important information for selecting the most suitable materials for SAW devices. As the SAWs generated from piezoelectric materials are significantly affected by the resistivity and density of the interdigital transducer (IDT) electrodes, three types of Al-Mo thin films with different Al contents were fabricated. The thickness of the Al-Mo thin film used in the SAW-IDT electrode was fixed at 150 nm. As the Al content of the Al-Mo thin film decreased from 81.2 to 30.3 at%, the resistivity decreased slightly from 5.43±0.15 to 4.87±0.1×10-5 Ω-cm, whereas the calculated density increased significantly from 4.1 to 7.9 g/㎤. The SAW device composed of Al-Mo IDT electrodes resonated at 143 MHz without frequency shifts; however, the selectivity of the resonant frequency and insertion loss deteriorated as the Al content decreased. This suggest that the resonant characteristics of the SAW devices fabricated with Al-Mo thin films were more strongly influenced by the material density rather than the electrical properties of the IDT electrodes.
This work focuses on improving the light-harvesting efficiency of thin-film silicon solar cells through innovative multi-architecture surface modifications. To create a regular optical structure, a lithographic process was performed to form it on a glass substrate through various etching processes, from Etch-1 to Etch-3. AZO was deposited on top of the structures and re-etched to create a multi-architectural surface. These surface-modified structures improved the light absorption and overall performance of the solar cell through changes in optical and physical properties, which we will analyze. In addition, we investigated the effect of post-cleaning on the etched glass structures through EDX analysis to understand the mechanism of the etching action. The results of this study are expected to provide important guidelines for the design and fabrication of solar cells and other photovoltaic devices.
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A Review on Energy Yield Enhancement Characteristics of Bifacial Photovoltaic Systems Combined with Solar Tracking Hyeong Gi Park Journal of Electrical and Electronic Materials.2026; 39(4): 309. CrossRef
Aluminum-induced crystallization (AIC) as a route to reduce the fabrication cost and to obtain polycrystalline Si (p- Si) thin-film of large grain size is a promising alternative of single-crystalline (s-Si) substrate or p-Si thin-film obtained by conventional methods such as solid phase crystallization (SPC) and laser-induced crystallization (LIC). As the AIC process occurs at the interface between a-Si and Al thin-films, there are various process and interface parameters. Also, it directly means that there is a certain parametric window to obtain p-Si of large grain size having uniform crystal orientation. In this article, we investigate the effect of the various process and interface parameters to obtain p-Si of large grain size and uniform crystal orientation from the literature review. We also suggest the potential use of the p-Si as a virtual substrate for the growth of various compound semiconductors in a form of low-dimension as well as thin-film as a way for their monolithic integration on Si.
Aluminum is a lightweight metal and has excellent properties with regard to conductivity, workability, and strength. It has been used in various industries owing to its economic benefits. To improve upon the mechanical properties and processability by adding various alloying elements to aluminum, improving the corrosion resistance and heat resistance by electrochemically forming a porous anodic film having a thickness and hardness on the surface of the aluminum alloy is crucial. In this study, the aluminum 6061 alloy was controlled by an anodization process in a 0.3M oxalic acid electrolyte at room temperature to investigate the oxide film parameters such as porosity and thickness depending on the modulating applied voltage and time. The anodizing experiment was performed by increasing the time from 1 h to 9 h at 2-h intervals at applied voltages of 50 V and 60 V.
In this study, we performed the deposition of Al thin film using a DC magnetron sputtering method. To evaluate electrical and structural properties, the growth conditions were changed in terms of two functions, namely, sputtering power ranging from 41.6 to 216 W and film growth rate ranging from 5.35 to 26.39 nm/min. The growth rate and the microstructure were characterized by a scanning electron microscopy and X-ray diffraction analysis. The plane of crystalline growth showed that the preferential (111) direction and defects due to the grain boundary increased with DC power. The resistivity of the Al film over 50 nm showed a constant value by horizontal grain growth. Our results can be applicable for the preparation of nano-templates for anodic aluminum oxide.
This research introduces the sputtered IZO thin film transistor (TFT) with solution-processed Al2O3 diffusion layer. IZO is one of the most commonly used amorphous oxide semiconductor (AOS) TFT. However, most AOS TFTs have many defects that degrade performance. Especially oxygen vacancy in the active layer. In previous research, aluminum was used as a carrier suppressor by binding the oxygen vacancy and making a strong bond with oxygen atoms. In this paper, we use a solution-processed Al2O3 diffusion layer to fabricate stable IZO TFTs. A double-layer solution-processed Al2O3-sputtered IZO TFT showed better performance and stability, compared to normal sputtered IZO TFT.
Because silicon thin film solar cells have a high absorption coefficient in visible light, they can absorb 90% of the solar spectrum in a 1-μm-thick layer. Silicon thin film solar cells also have high transparency and are lightweight. Therefore, they can be used for building integrated photovoltaic (BIPV) systems. However, the contact electrode needs to be replaced for fabricating silicon thin film solar cells in BIPV systems, because most of the silicon thin film solar cells use metal electrodes that have a high reflectivity and low transmittance. In this study, we replace the conventional aluminum top electrode with a transparent aluminum-doped zinc oxide (AZO) electrode, the band level of which matches well with that of the intrinsic layer of the silicon thin film solar cell and has high transmittance. We show that the AZO effectively replaces the top metal electrode and the bottom fluorine-doped tin oxide (FTO) substrate without a noticeable degradation of the photovoltaic characteristics.
Because of the development of LED technology, products due to high output and compact, thematerial with high thermal conductivity has been developed. Now that heat radiating part of the LEDlamp is currently used for die casting of aluminum. The development of aluminum with excellent thermalconductivity is required. In this study, we measured the thermal properties and compared them while weproduced the alloy by changing the component of die casting aluminum. From this study, the thermalconductivity and thermal resistance of the developed alloy were superior to die casting aluminum.
Anodic aluminum oxides (AAO) fabricated by the two-step anodizing process have attracted much attention for the fabrication of nano template because of pore structure with high aspect ratio, low cost process and ease of fabrication. AAOs are characterized by a homogeneous morphology of parallelpores that grow perpendicular to the template surface with a narrow distribution of diameter, length and inter-pores spacing, all of which can be easily controlled by suitably choosing of the anodizingparameters such as pH of the electrolyte, anodizing voltage and duration of anodizing. In this study, AAOtemplates were characterized by X-ray diffraction and field-emission scanning electron microscope(FE-SEM). The dependence of the pore size change according to the amount of addition of phosphoric acid, which was used to remove the initial alumina oxide layer, was not observed.
Aluminum oxide(Al2O3) film deposited by atomic layer deposition (ALD) is known to supply excellent surface passivation properties on crystalline Si surfaces. Since Al2O3 has fixed negative charge, it forms effective surface passivation by field effect passivation on the rear side in p-type silicon solar cell. However, Al2O3 layer formed by ALD process needs very long process time, which is not applicable in mass production of silicon solar cells. In this paper, plasma-assisted ALD(PA-ALD) was applied to form Al2O3 to reduce the process time. Al2O3 synthesized by ALD on c-Si (100) wafers contains a very thin interfacial SiO2 layer, which was confirmed by FTIR and TEM. To improve passivation quality of Al2O3layer, the deposition temperature was changed in range of 150∼350℃, then the annealing temperature and time were varied. As a result, the silicon wafer with aluminum oxide film formed in 250℃, 400℃ and 10min for the deposition temperature, the annealing temperature and time, respectively, showed the best lifetime of 1.6ms. We also observed blistering with nanometer size during firing of Al2O3 deposited on p-type silicon.
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Properties of liquid phase deposited aluminium oxide thin film on black silicon fabricated by aluminium-assisted chemical etching Suleman Kazim Omotayo, Nuranis Liyana Muhamad Burhan, Mohd Marzaini Mohd Rashid, Mohd Zamir Pakhuruddin Physica Scripta.2025; 100(3): 035545. CrossRef
In this study, we fabricated anodic aluminum oxide (AAO) membrane by two step anodizing process for pH detection. The structural properties were observed by X-ray diffraction (XRD) and field emission scanning electron microscope (FE-SEM). Electrochemical measurements of the pH sensor have been performed in capacitance-voltage (C-V) and drift rates. The characterization of AAO membrane exhibited high sensitivity (99.1 mV/pH) at second anodizing time of 4 min.이 논문에 참고문헌이 0건 있습니다.
Abstract: The new recycling technology for aged aluminum wires in overhead conductor has been carried out. The authors are attempting to develop remanufacturing method for them for more effective way of recycling in stead of its conventional remelting process. The new recycling technology for aged aluminum wire in overhead conductor was composed of four steps in different develop process, destranding process for conductor, surface cleaning process, welding process and drawing process for aluminum wire. This paper investigates the properties during recycle process of aged aluminum wire. The results of microscopic analysis and mechanical properties were discussed to underscore recycling aluminum wire. Various graphs are presented accompanied by discussion about their relevance on the process. In conclusion, we confirmed the possibility of remanufacturing technique by using new process.
The new recycling technology for aged aluminum wires in overhead conductor have been carried out. We are attempting to develop remanufacturing method for them for more effective way of recycling in stead of its conventional remelting process. The drawing process of aged aluminum wires play a role in remanufacture process. Drawing process was performed under lubricant. The speed of drawing was between 500 m/min and 1,000 m/min. These machines have 11 or 12 dies house for breakedown of the feedstock. of the die is tungsten carbide and they have generally 25% reduction ratio. The paper investigates the mechanical properties during drawing process of aged aluminum wire. The results of tensile tests and microscopic analysis were discussed to underscore the hardening features of drawing of aluminum wire. Various graphs are presented accompanied by discussion about their relevance on the process.
The new recycling technology for aged Aluminum wires in overhead conductor have been carried out. We are attempting to develop remanufacturing method for them for more effective way of recycling in stead of its conventional remelting prorecs. The weld of aged aluminum wires play a vital role in remanufacture process. The paper investigates the mechanical properties during cold welding process of aged Aluminum wire. The tensile tests and microscopic analysis results are discussed to underscore the hardening features of welded aluminum wire. Various graphs are presented accompanied by discussion about their relevance on the process.
In this investigation, the effects of N(2)/(Ar+N(2)) gas partial pressure on the structural, electrical, and thermal properties of AlN dielectric layers prepared on aluminum substrates using RF-magnetron sputtering method were analyzed. Among the films, the AlN dielectric film deposited under N(2)/(Ar+N(2)) gas partial pressure of 75% exhibit the highest AlN (002) preferred orientation, which was grain size of about 15.3(2) nm and very dense structure. We suggest the possibilities of it`s application as a dielectric layer for metal PCB because the AlN films prepared at optimized gas partial pressure can improving the insulating property, the thermal conductivity, and thermal diffusivity of the films.
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Characterization of AlN Thin Films Grown by Pulsed Laser Deposition on Sapphire Substrate Eun-Hee Jeong, Jun-Ki Chung, Rae-Young Jung, Sung-Jin Kim, Sang-Yeup Park Journal of the Korean Ceramic Society.2013; 50(6): 551. CrossRef
Effect of PVA Polymerization on Synthesis of YAG:Ce3+Phosphor Powders Prepared by a Solid-liquid Hybrid Route A-Reum Kim, Sang-Jin Lee Journal of the Korean Ceramic Society.2014; 51(5): 424. CrossRef
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