This research introduces the sputtered IZO thin film transistor (TFT) with solution-processed Al2O3 diffusion layer. IZO is one of the most commonly used amorphous oxide semiconductor (AOS) TFT. However, most AOS TFTs have many defects that degrade performance. Especially oxygen vacancy in the active layer. In previous research, aluminum was used as a carrier suppressor by binding the oxygen vacancy and making a strong bond with oxygen atoms. In this paper, we use a solution-processed Al2O3 diffusion layer to fabricate stable IZO TFTs. A double-layer solution-processed Al2O3-sputtered IZO TFT showed better performance and stability, compared to normal sputtered IZO TFT.
