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Volume 18(4); April 2005

Development of SiGe Heterostructure Epitaxial Growth and Device Fabrication Technology using Reduced Pressure Chemical Vapor Deposition: J Korean Inst Electr Electron Mater Eng 2005;18(4):285-296. Published online April 1, 2005; DOI: https://doi.org/10.4313/JKEM.2005.18.4.285

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CMP Properties of Oxide Film with Various Pad Conditioning Temperatures: J Korean Inst Electr Electron Mater Eng 2005;18(4):297-302. Published online April 1, 2005; DOI: https://doi.org/10.4313/JKEM.2005.18.4.297

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Electrochemical Corrosion and Chemical Mechanical Polishing(CMP) Characteristics of Tungsten Film using Mixed Oxidizer: J Korean Inst Electr Electron Mater Eng 2005;18(4):303-308. Published online April 1, 2005; DOI: https://doi.org/10.4313/JKEM.2005.18.4.303

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Design of 13.56 MHz RFID Tag IC: J Korean Inst Electr Electron Mater Eng 2005;18(4):309-312. Published online April 1, 2005; DOI: https://doi.org/10.4313/JKEM.2005.18.4.309

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A Study on the Characteristics of Stick-slip Friction in CMP: J Korean Inst Electr Electron Mater Eng 2005;18(4):313-320. Published online April 1, 2005; DOI: https://doi.org/10.4313/JKEM.2005.18.4.313

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Effect of Slurry Film Thickness Variation according to Spray Range Using Ultrasonic Spray Nozzle on Material Removal Rate
Seongnyeong Heo, Seonho Jeong, Minji Kim, Youngwook Park, Haedo Jeong
Journal of the Korean Society for Precision Engineering.2022; 39(9): 675. CrossRef

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Fixed Abrasive Pad with Self-conditioning in CMP Process: J Korean Inst Electr Electron Mater Eng 2005;18(4):321-326. Published online April 1, 2005; DOI: https://doi.org/10.4313/JKEM.2005.18.4.321

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Effect of the Hydrogen Annealing on the Pb(Zr0.52Ti0.48)O3 Film using (Pb0.72La0.28)Ti0.94O3 Buffers: J Korean Inst Electr Electron Mater Eng 2005;18(4):327-329. Published online April 1, 2005; DOI: https://doi.org/10.4313/JKEM.2005.18.4.327

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Effects of the Transition Metal Oxides Substituted for Mg on the Electrical Conductivity of La0.8Sr0.2Ga0.8Mg0.2O(3-δ)-based Electrolytes: J Korean Inst Electr Electron Mater Eng 2005;18(4):330-337. Published online April 1, 2005; DOI: https://doi.org/10.4313/JKEM.2005.18.4.330

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Effects of (100) Orientation of LaNiO3 on the Growth and Ferroelectric Properties of Pb(Zr, Ti)O3 Thin Films: J Korean Inst Electr Electron Mater Eng 2005;18(4):338-343. Published online April 1, 2005; DOI: https://doi.org/10.4313/JKEM.2005.18.4.338

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Electrical and Optical Characteristics of Plasma Display Panel Fabricated by Vacuum In-Line Sealing: J Korean Inst Electr Electron Mater Eng 2005;18(4):344-349. Published online April 1, 2005; DOI: https://doi.org/10.4313/JKEM.2005.18.4.344

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Study of Space Charge of Metal/copper(2)-phthalocyanine Interface: J Korean Inst Electr Electron Mater Eng 2005;18(4):350-356. Published online April 1, 2005; DOI: https://doi.org/10.4313/JKEM.2005.18.4.350

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Structure and Characteristics of Tandem Solar Cell Composed of Dye-sensitized Solar Cell and Thermoelectric Generator: J Korean Inst Electr Electron Mater Eng 2005;18(4):357-362. Published online April 1, 2005; DOI: https://doi.org/10.4313/JKEM.2005.18.4.357

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Comparison of Operating Characteristics between Flux-Lock Type and Resistive Type Superconducting Fault Current Limiters: J Korean Inst Electr Electron Mater Eng 2005;18(4):363-369. Published online April 1, 2005; DOI: https://doi.org/10.4313/JKEM.2005.18.4.363

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AC Loss Characteristic in the Fault Current Limiting Elements of a Coil Type: J Korean Inst Electr Electron Mater Eng 2005;18(4):370-374. Published online April 1, 2005; DOI: https://doi.org/10.4313/JKEM.2005.18.4.370

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Influence of the conductor’s arrangement and current on the AC loss characteristics of a fault current limiting coil
Z.Y. Li, Y.H. Ma, K. Ryu, S. Choi, K.B. Park, I.S. Oh
Physica C: Superconductivity.2008; 468(15-20): 2063. CrossRef

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The Character of Electron Ionization and Attachment Coefficients in Perfluoropropane(C3F8) Molecular Gas by the Boltzmann Equation: J Korean Inst Electr Electron Mater Eng 2005;18(4):375-380. Published online April 1, 2005; DOI: https://doi.org/10.4313/JKEM.2005.18.4.375

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Measurement of Ar Temperature of Hollow Cathode Discharge Plasma: Jun Hoi Lee, Jae Soo Shin, Sung Jik Lee, Min Soo Lee; J Korean Inst Electr Electron Mater Eng 2005;18(4):381-385. Published online April 1, 2005; DOI: https://doi.org/10.4313/JKEM.2005.18.4.381

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