Skip to main navigation Skip to main content
  • KIEEME

J Electr Electron Mater : Journal of Electrical and Electronic Materials

OPEN ACCESS
Search
Advanced Search
ABOUT
BROWSE ARTICLES
EDITORIAL POLICIES
FOR CONTRIBUTORS

Articles

Page Path

저압화학증착을 이용한 실리콘-게르마늄 이종접합구조의 에피성장과 소자제작 기술 개발

김규환, 김상훈, 송영주, 이내응, 임정욱, 강진영

Development of SiGe Heterostructure Epitaxial Growth and Device Fabrication Technology using Reduced Pressure Chemical Vapor Deposition

, , , , ,
J Electr Electron Mater 2005;18(4):285-296.
Published online: April 1, 2005
  • 4 Views
  • 0 Download
  • 0 Crossref
  • 0 Scopus
next

Full Article

Download PDF Download PDF

Download Citation

Download a citation file in RIS format that can be imported by all major citation management software, including EndNote, ProCite, RefWorks, and Reference Manager.

Format:

Include:

Development of SiGe Heterostructure Epitaxial Growth and Device Fabrication Technology using Reduced Pressure Chemical Vapor Deposition
J Electr Electron Mater. 2005;18(4):285-296.   Published online April 1, 2005
Download Citation

Download a citation file in RIS format that can be imported by all major citation management software, including EndNote, ProCite, RefWorks, and Reference Manager.
Format:
Include:
Development of SiGe Heterostructure Epitaxial Growth and Device Fabrication Technology using Reduced Pressure Chemical Vapor Deposition
J Electr Electron Mater. 2005;18(4):285-296.   Published online April 1, 2005
Close

Related articles

ABOUT

BROWSE ARTICLES

EDITORIAL POLICIES

FOR CONTRIBUTORS

© The Korean Institute of Electrical and Electronic Materials Engineers.