The characteristic changes in ZnO thin film according to H- and O- plasma treatments have been studied by Photoluminescence (PL) spectroscopy at room temperature. The red shift of UV peak by 20-30 meV in PL spectra after plasma treatments is identified, which indicates that there are changes in the binding energy of bound exciton and/or the movement of energy levels of lattice defects and impurities. The width of UV peak is decreased after plasma treatments, which is believed to be closely related to the crystal quality of ZnO film. The increase of UV peak intensity after H-plasma treatment is also observed, and this could mean that the radiative recombination is strengthened because the hydrogen atoms in the plasma diffuse into the film where they passivate and neutralize the defects and the impurities.

We have studied structural, optical, and electrical properties of the Al-doped ZnO (AZO) thin films being usable in transparent conducting oxides. The AZO thin films were deposited on the corning 1737 glass plate by the RF magnetron sputtering system. To find optimal properties of AZO for transparent conducting oxides, the RF power in sputtering process was varied as 40 W, 60 W, and 80 W, respectively. As RF power increased, the crystallinity of AZO thin film was decreased, the optical bandgap of AZO thin film increased. The transmittance of the film was over 80% in the visible light range regardless of the changes in RF power. The measurement of Hall effect characterizes the whole thin film as n-type, and the electrical property was improved with increasing RF power. The structural, optical, and electrical properties of the AZO thin films were affected by Al dopant content in AZO thin film.

In this paper, PBTI characteristics of NMOSFETs with La incorporated HfSiON and HfON are compared in detail. The charge trapping model shows that threshold voltage shift (ΔVT) of NMOSFETs with HfLaON is greater than that of HfLaSiON. PBTI lifetime of HfLaSiON is also greater than that of HfLaON by about 2∼3 orders of magnitude. Therefore, high charge trapping rate of HfLaON can be explained by higher trap density than HfLaSiON. The different de-trapping behavior under recovery stress can be explained by the stable energy for U-trap model, which is related to trap energy level at zero electric field in high-k dielectric. The trap energy level of two devices at zero electric field, which is extracted using Frenkel-poole emission model, is 1,658 eV for HfLaSiON and 1,730 eV for HfLaON, respectively. Moreover, the optical phonon energy of HfLaON extracted from the thermally activated gate current is greater than that of HfLaSiON.

The osseointegration of dental implant is influenced by many factors such as surface geometry, loading and the amount of bone. Thus, stability of the dental implant should be checked periodically. In order to test the stability of dental implant by using resonance frequency analysis, we designed a structure of transducers and fabricated a piezoelectric devices. Using finite element analysis, the thickness and length of piezoelectric device and transducers were tailorized and the optimized frequency of 10 kHz was obtained. The resonance frequency from simulation analysis and evaluation was estimated to be similar as 10 kHz. The osseointegration was further enhanced with increasing frequency from the evaluation result of the finite element analysis.

In this study, non-stoichiometric 1-x[(K0.5Na0.5)0.97(Nb0.96Sb0.04)O3] + x CeMnO3 + 0.8 mol%CuO + 0.2 wt% Ag2O (x=0, 0.005) ceramics were prepared by a conventional mixed oxide and carbonate method, their dielectric and piezoelectric properties were investigated with the variations of sintering temperature. As CeMnO3 substitution incereased, the density, piezoelectric constant(d33) and dielectric constant(εr) were increased and the mechanical quality factor(Qm) was decreased. At the sintering temperature of 1100℃, the density, electromechanical coupling factor(kp), dielectric constant(εr) and piezoelectric constant(d33) of 0.5mol% CeMnO3 specimen showed the optimun values of 4.475 g/㎤, 0.437, 552 and 166 pC/N, respectively. However, the mechanical quality factor(Qm) showed the minimum value of 380.

The effect of lead free glass frit compositions on the properties of thick film conductor and resistor pastes were investigated. Two types lead free frits, HBF-A(without Bi2O3) and HBF-B(with Bi2O3) were made from SiO2, B2O3, Al2O3, CaO, MgO, Na2O, K2O, ZnO, MnO, ZrO2, Bi2O3. And Ag based conductor pastes and RuO2 based resistor paste were prepared by mixed with these frits and functional phase(Ag and RuO2), and organic vehicle. The properties of thick film conductor and resistor sintered at 850℃ were studied after printing on Al2O3 substrate. The morphology of the sintered films surface were SEM and EDS were carried out to analysis the chemical composition on resistor surface and state of Ru atom in frit matrix.

In this thesis, the partial discharge according to applied voltage and variations of cross-sectional area and length of the conductor related to general condition for using cable was measured in order to study degradation diagnosis for 2-Core cable of the PVC insulator used in industrial fields for other safety installations. Also the thermal degradation conditions under various installation circumstances of cables were studied by assuming degradation conditions with each different degradation rate (50%, 67%, 100%) such as variation in degradated temperature, thermal exposure time, normal state, partially degradated state and overall degradated state for thermal degradation diagnosis. The quantity of electric discharge (V-Q) according to applied voltage was measured for measurement of inception voltage and extinction voltage. The quantity of electric discharge and the number of electric discharge (Q-N) were measured with applied voltage kept constantly. In addition, pictures were taken using SEM (scanning electron microscope) to compare the surface of external insulator to degradated state of internal insulator according to thermal degradation temperature and also compare the surface of external insulator to degradated surface state of internal insulator according exposure time of cables to thermal stress.

A novel design of gas sensor using Ga-doped ZnO (GZO) thin films which are deposited on low temperature co-fired ceramic (LTCC) substrates is presented. The LTCC substrates with thickness of 400 μm are fabricated by laminating 12 green tapes which consist of alumina and glass particle in an organic binder. The GZO thin films with different thickness are deposited on LTCC substrates, by RF magnetron sputtering method. The microstructure and sensing properties of GZO gas sensing films are analyzed as a function of the film thickness. The films are well crystallized in the hexagonal (wurzite) structure with increasing thickness. The maximum sensitivity of 3.49 is obtained at 100 nm film thickness and the fastest 90% response time of 27.2 sec is obtained at 50 nm film thickness for the operating temperature of 400oC to the NO2 gas.

Rhenium-Iridium(Re-Ir) thin films were deposited onto the tungsten carbide(WC) molding core by sputtering system. The Re-Ir films were prepared by multi-target sputtering with iridium, rhenium and chromium as the sources. Argon and nitrogen were inlet into the chamber to be the plasma and reactive gases. The Re-Ir thin films were prepared with targets having atomic percent of 3:7 and the Re-Ir thin films were formed with 240 nm thickness. The Re-Ir thin films on tungsten carbide molding core were analyzed by scanning electron microscope(SEM) and surface roughness. Also, adhesion strength and coefficient friction of Re-Ir thin film were examined. The Re-Ir coating technique has been intensive efforts in the field of coating process because the coating technique and process have been their feature, like hardness, high elasticity, abrasion resistance and mechanical stability and also have been applied widely the industrial and biomedical areas. In this report, tungsten carbide(WC) molding core was manufactures using high performance precision machining and the efforts of Re-Ir coating on the surface roughness.

This research, integratable capacitive relative humidity sensor was produced using polyimide on glass substrate. Also, at the time of upper electrode formation, upper electrode grain size was affected by giving changes to sputtering condition. Through this analyzing electrical characteristics affect from capacitive relative humidity sensor was possible. Capacitance of capacitive relative humidity sensor was 330 pF, linearity of 0.6%FS and it showed less than 3% of low hysterisis. Specially, hysterisis was affected more from interface than interstitial. Also was affected by the grain size which is one of the formation condition of upper electrode.

Diamond thin films were deposited on pretreated Co cemented tungsten carbide (WC-6%Co) inserts as substrate by microwave plasma chemical vapor deposition (MPCVD) system, equipped with a 915MHz, 30kW generator for generating a large-size plasma. The substrates were pretreated with two solutions Murakami solution [KOH:K3Fe(CN)6:H2O] and nitric solution [HNO3:H2O] to etch, WC and Co at cemented carbide substrates, respectively. The deposition experiments were performed at an input power of 10 kW and in a total pressure of 100 torr. The influence of various CH4 contents on the crystallinity and morphology of the diamond films deposited in MPCVD was investigated using scanning electron microscopy (SEM) and Raman spectroscopy. The diamond film synthesized by the CH4 plasma shows a triangle-faceted (111) diamond. As CH4 contents was increased, the thickness of diamond films increased and the faceted planes disappeared. Finally, Faceted diamond changed into nano-crystalline diamond with random crystallinity.

In this study, the heat transfer capability have been improved by using via-holes in FR4 PCB, when the LED lighting is designed to solve the thermal problem. The thermal resistance and junction temperature were measured by changing the dimension of FR4 PCB and size of via hole. As a result, when the dimension was increased initially, the thermal resistance and junction temperature was decreased rapidly, the ones was stabilized after the dimension of 200 [mm2]. Also, the light output was improved up to maximum 17% by formation of via-hole and expansion of dimension in FR4 PCB. Therefore, the thermal resistance and junction temperature could be improved by expansion of PCB dimension and configuration of via-hole ability.

The high cost of crystalline silicon solar cells has been considered as one of the major obstacles to their terrestrial applications. Spin on doping (SOD) is presented as a useful process for the manufacturing of low cost solar cells. Phosphorus (P509) was used as an n-type emitters of solar cells. N-type emitters were formed on p-type EFG ribbon Si wafers by using a SOD at different spin speed (1,000∼4,000 rpm), diffusion temperatures (800℃∼950℃), and diffusion time (5∼30 min) in N2+O2 atmosphere. With optimum condition, we were able to achieve cell efficiency of 14.1%.

Carbon nanotubes (CNTs) have been significantly used for the field emitters for display applications. However, the lifetime of CNT emitters which are formed by screen printing technique is not guaranteed yet, because the constituents in CNT paste affect the lifetime of CNTs. The CNT pastes for screen printing are normally composed of organic vehicles (nitro cellulose, ethyl cellulose, etc) and additives (glass frits, indium tin oxide (ITO), etc) with CNTs. In this study, the effects of constituents in CNT pastes on the lifetime and emission characteristics of CNTs were investigated by thermal and electrical analysis. Use of glass frits worsened the lifetime and electron emission of CNTs. However, an addition of ITO to CNT paste rather improved the lifetime of CNTs. Degradation of CNTs was small when nitro cellulose was used in CNT paste as an organic vehicle.

This paper dealt with the design, fabrication and application of a risk voltage measurement system (RVMS) which analyzes the step and touch voltages in electrical grounding systems. The RVMS supply 300 V and 1.4 A in ranges from 40 Hz to 1 kHz as the test power source. A DAQ module having resolution of 400 kS/s and 16 bit is equipped with 7 inputs for measuring voltage and current. Also, a noise elimination algorithm of digital filter was applied to reduce the measurement error caused by external noises as a commercial frequency current. The performance of the RVMS was evaluated by measurement of the step and touch voltage according to the IEEE standard 80 and 81 in a grounding system with a 10 m counterpoise. The result showed that the RVMS analyzes the risk voltage with the error below 5%.

ZnO nanostructures with tetrapod, needle and multipod shapes were synthesized without catalysts through a simple thermal oxidation of metallic Zn powder in alumina crucible under air atmosphere. X-ray diffraction data revealed that the ZnO nanostructures had wurtzite structure of hexagonal phase. Energy dispersive X-ray (EDX) spectra showed that the ZnO was of high purity. After the oxidation of Zn powder, white colored product was mainly observed and yellow colored product was observed only a very little on the surface of the oxidized source materials. The white product consisted of tetrapods, while yellow product was composed of needles and multipods. Cathodoluminescece spectra showed that the crystalline quality of tetrapods was better that those of needles and multipods.