Recently perovskite materials with much cheaper cost and marvellous optoelectronic properties have been studied for next generation LED display devices overseas. Technology development trends of inorganic CsPbX₃(X=halogen) based LEDs (PeLEDs) with assumed high stability were investigated on literature worldwide. It was found that syntheses methods of these nanocrystals (NCs, mainly quantum dots, QDs) made great progress. A new room temperature synthesis method showed outstanding PL (photoluminescence) properties such as high quantum yield (QY), narrow emission width, storage stability comparable with, or often exceeding those of conventional hot injection method and CdSe@ZnS type inorganic colloidal QDs. PeLEDs with shell layers might be more promising, indicating urgent real research start of this solution processing technology for small businesses in Korea.

For the channel doping of shallow junction and retrograde well formation in CMOS, indium can be implanted in silicon. The retrograde doping profiles can serve the needs of channel engineering in deep MOS devices for punch-through suppression and threshold voltage control. Indium is heavier element than B, BF2 and Ga ions. It also has low coefficient of diffusion at high temperatures. Indium ions can be cause the erode of wafer surface during the implantation process due to sputtering. For the ultra shallow junction, indium ions can be implanted for p-doping in silicon. UT-MARLOWE and SRIM as Monte carlo ion-implant models have been developed for indium implantation into single crystal and amorphous silicon, respectively. An analytical tool was used to carry out for the annealing process from the extracted simulation data. For the 1D (one-dimensional) and 2D (two-dimensional) diffused profiles, the analytical model is also developed a simulation program with C++ code. It is very useful to simulate the indium profiles in implanted and annealed silicon autonomously. The fundamental ion-solid interactions and sputtering effects of ion implantation are discussed and explained using SRIM and T-dyn programs. The exact control of indium doping profiles can be suggested as a future technology for the extreme shallow junction in the fabrication process of integrated circuits.

We demonstrate the utilization of ion gel gate dielectrics for operating non-volatile transistor memory devices based on polymer semiconductor thin films. The gating process in typical electrolyte-gated polymer transistors occurs upon the penetration and escape of ionic components into the active channel layer, which dopes and dedopes the polymer film, respectively. Therefore, by controlling doping and dedoping processes, electrical current signals through the polymer film can be memorized and erased over a period of time, which constitutes the transistor-type memory devices. It was found that increasing the thickness of polymer films can enhance the memory performance of device including (i) the current signal ratio between its memorized state and erased state and (ii) the retention time of the signal.

To investigate excess Na⁺ effect, Bi_0.5(Na_0.78+xK_0.22)0.5TiO₃ (0≤x≤0.05) (BNKT) ceramics were prepared by using a conventional solid-state reaction method. The structure and ferroelectric properties of BNKT ceramics were characterized by XRD (X-ray diffraction) and polarization dependence by external electric field. Also, the temperature dependence of dielectric constant and loss were studied. From these results, it was found that appropriate excess Na⁺ into BNKT ceramics compensate the volatility and induce dense ceramics. The enhanced piezoelectric coefficient (158 pC/N) and depolarization temperature (202℃) were obtained for the x=0.01 composition.

Characteristics of a wireless sensor powered by the IDE (interdigitated electrode) embedded piezoelectric cantilever generator were analyzed in order to evaluate its potential for use in wireless sensor applications. The IDE embedded piezoelectric cantilever was designed and fabricated to have a self-resonance frequency of 126 Hz and acceleration of 1.57 G, respectively, for the mechanical resonance with a practical conveyor system in a thermal-power plant. It produced maximum output power of 2.81 mW under the resistive load of 160 Ω at 126 Hz. The wireless sensor module is electrically connected to a rectifier capacitor with capacity of 0.68 farad and 3.8 V for power supply by the piezoelectric cantilever generator. The unloaded capacitor could be charged as a rate of approximately 365 ㎶/s while the capacitor exhibited that of 0.997 mV/min. during communication under low duty cycle of 0.2%. Therefore, it is considered that the fabricated IDE embedded piezoelectric cantilever generator can be used for wireless sensor applications.

Recently, energy harvesting technology is increasing due to the fossil fuel shortages. To compensate problem of low generating power than other energy harvesters, many researchers have studied about piezoelectric harvester for obtaining high output. In this paper, four kinds of unimorph based piezoelectric harvesters were proposed and its generating characteristics were studied. Each of the piezoelectric harvesters has three, four, and six unimorph arms, respectively, and the arms are symmetrically arranged from one central point. The centrosymmetric structure of the harvesters guarantees more stable and multiplied generation than a cantilever-type harvester since the arms of the harvester resonate at same frequency. Resonance frequency, output voltage, displacement, and stress characteristics of the generator were analyzed by using a FEM (finite element method) program. Harvesters were fabricated on the basis of analysis results. Experimental results were compared with simulated results.

With trend of the miniaturization and the high-functionalizing of mobile communication system, low-loss microwave dielectric materials are widely used for high frequency communication components. These dielectric materials should be co-sintered with highly electric-conducting metal such as silver or copper for high-frequency and thick film process application. Sintering temperature of Ca[(Li_1/3Nb_2/3)_1-xTi_x]O_3-δ, which has excellent dielectric properties such as ε_r above 40, quality factor (Q·f₀) above 16,000 GHz, and TCF (temperature coefficient of resonant frequency) of -20~-10 ppm/℃, is reported as high as 1,175℃, so it could not be co-sintered with silver or copper. Therefore in this study, low-temperature melting glasses of Zn-B-O and Zn-B-Si-O systems were added to Ca[(Li_1/3Nb_2/3)_1-xTi_x]O_3-δ to lower its sintering temperature under 900℃ without losing excellency of dielectric properties. With 15 weight % of Zn-B-Si-O glass and sintered at 875℃, specimen showed density of 4.11 g/cm³,ε _r of 40.1, Q·f₀ of 4,869 GHz, and TCF of -5.9 ppm/℃. With 15 weight % of Zn-B-O glass and sintered at 87 5℃, specimen showed density of 4.14 g/cm³, ε_r of 40.4, Q·f₀ of 7,059 GHz, and TCF of -0.92 ppm/℃.

Hole explosion behaviors were observed during drilling fine holes with laser beam on the LTCC green bar of 320 ㎛ thick after lamination of green sheets prepared by tape casting of thick film process. The incidence of these hole explosions was inversely proportional to hole sizes. The incidence of hole explosion was 20 % number of hole with the size of 60 ㎛ exploded for the UV radiation, while the explosion did not appear for hole sizes over 100 ㎛. To prevent hole explosion behavior during laser-drilling of fine holes, carbon black powder was added as an additive in the LTCC composition, which has superior thermal durability. As a consequence, hole explosion rate was suppressed to 0.8 % for the hole size of 50 ㎛ green sheet with the carbon black amount of 10 weight % and the laser power of 3 watt. Added carbon is thought to reduce the heat-affected region during laser drilling.

The effects of TiO2 addition on the electrical insulation of AlN ceramics with 1 wt% Y₂O₃ as a sintering aid have been investigated. Some of TiO₂ has reacted with AlN powders and transformed to fine TiN particles during sintering, which was uniformly dispersed along grain boundaries of AlN. At a high electrical field (500 V/mm), the resistivity of AlN ceramics with TiO₂ addition of 0.2 wt% increased about 1000 times from 3x10¹⁰ Ω cm to 3.1×10¹³ Ωcm. Based on the impedance spectroscopy measurement, it was found that TiO₂ addition increased dramatically electrical resistivity of AlN grains much more than that of grain boundaries. Thus, TiO2 was believed to dissolve inside AlN grains to suppress ionic conduction of Al vacancies. This suppressed ionic conduction by Ti incorporation into AlN grains seems to contribute to more electrically insulating AlN ceramics.

In order to develop an electrical insulation material for gas GIS (insulation switch gear) spacer, 4 types of epoxy/micro-alumina (40, 50, 60, 70 wt%) composites and 9 types of epoxy/nano-alumina (1, 3, 5 g)/micro-alumina (40, 50, 60, 70 wt%) composites were prepared and tensile test was carried out. In here, nano-alumina was previously surface-treated with GDE (glycerol diglycidyl ether). As micro-alumina and GDE-treated nano-alumina contents increased, tensile strength increased and the highest value was shown in the system with 3 g GDE-treated nano-alumina.

In this work, one dimension In₂O₃ nanostructures as detecting materials for indoor toxic gases were synthesized by an electrospinning process. The morphology of electrospun In₂O₃ nanofibers was controlled by electrolyte composition, applied voltage and working distance between a nozzle and a substrate. The synthesized In₂O₃ nanofibers-based paste with/without carbon black additives was prepared for the integration on a sensor device. The integration of In₂O₃ sensing materials was conducted by a hand-printing of the paste into the interdigit Au electrodes patterned on Si wafer. Gas sensing properties on CO and HCHO gases were characterized at 300℃. The evaluated sensing properties such as sensitivity, response time and recovery time were improved in In₂O₃ nanofiber pastes with carbon black, compared to the paste without carbon black.

We investigated a SiC-based hydrogen gas sensor with MIS (metal-insulator-semiconductor) structure for high temperature applications. The sensor was fabricated by Pd/TiO₂/SiC structure, and a thin titanium dioxide (TiO₂) layer was exploited for sensitivity improvement. In the experiment, dependences of I-V characteristics and capacitance response properties on hydrogen gas concentrations from 0 to 2,000 ppm were analyzed at room temperature to 400℃. As the result, our sensor using TiO₂ dielectric layer showed possibilities with regard to use in hydrogen gas sensors for high-temperature applications.

DSSCs (dye-sensitized solar cells) based on TiO₂/SiO₂ multi layer AR (anti-reflection) coating on the outer glass FTO (fluorine-doped tin oxide) substrate are investigated. We have coated an AR layer on the surface of a DSSCs device by using an IAD (ion beam-assisted deposition) system and investigated the effects of the AR layer by measuring photovoltaic performance. Compared to the pure FTO substrate, the multi layer AR coating increased the total transmittance from 67.4 to 72.9% at 530 nm of wavelength. The main enhancement of solar conversion efficiency is attributed to the reduction of light reflection at the FTO substrate surface. This leads to the increase of Jsc and the efficiency improvement of DSSCs.

DSSC (dye-sensitized solar cell) is expected to be one of the next-generation photovoltaics because of its environment-friendly and low-cost properties. However, commercialization of DSSC is difficult because of the electrolyte leakage. We propose thermal curable base on silicon resin and apply a unit cell and large area (200×200 mm) dye-sensitized solar cell. The resin aimed at sealing of DSSC and gives a promising resolution for sealing of practical DSSC. In result, the photoelectric conversion efficiency of the unit cell and the module was 6.63% and 5.49%, respectively. In the durability test result, the photoelectric conversion efficiency of the module during 500, 1,000, 1,500 and 2,000 hours was 0.73%, 0.73%, 1.82% and 2.36% respectively. It was confirmed that the photoelectric conversion efficiency characteristics are constant. We have developed encapsulation material of thermal curing method excellent in chemical resistance. A sealing material was applied to the dye-sensitized solar cell and it solved the problem of durability the dye-sensitized solar cell. Sealing material may be applied to verify the possibility of practical application of the dye-sensitized solar cell.

In this study, effects of ICP (inductively coupled plasma) treatment on PAR thin film have been investigated. A maximum etch rate of the PAR thin films and the selectivity of PAR to PR were obtained as 110 nm/minand 1.1 in the CF₄/O₂ (5:15 sccm) gas mixture. We present the surface properties of PAR thin film with various treatment conditions. The surface morphology and cross section of the PAR thin film was observed by AFM (atomic force microscopy) and FE-SEM (filed emission scanning electron microscopy).

Coil specimens were prepared by continuous coating on a copper wire with flexible PAI (polyamideimide) and PAI/nanosilica (5 wt%) varnish and thermally aged at 150, 200 and 250℃ for 5, 10 and 15 days, respectively. AC insulation breakdown voltage was investigated under inverter surge condition at 60 Hz and 1,000 Hz and insulation breakdown voltage decreased with increasing aging temperature and aging time at each 60 and 1,000 Hz.

In this study, the electrostatic capacity and dielectric loss tangent for 20 μm thick thermal conductivity silicone rubber which is heated at 80 degrees for 8 hours has been measured at temperature of 30℃∼170℃, frequency of 0.1∼1 MHz. The results of degradation evaluation by this study are as follows. In low frequency, it found that the electrostatic capacity decreased with increasing temperature. On the other hand, it confirmed that the range of the electrostatic capacity narrowed with increasing frequency. It confirmed that there are the carboxylic acid structure and C-O bonding at range of wave number 1,000cm-1 to 1,300cm-1.

ZnO nanorods were grown on SiO2 coated Si wafers and glass by the hydrothermal method. The structural and optical properties variation of ZnO nanorods as a function of growing time was studied. ～10 nm-thick ZnO thin films deposited on substrates by rf magnetron sputtering were employed as seed layers. Zinc nitrate hexahydrate (0.05 M) and hexamethylenetetramine (0.05 M) mixed in DI water were used as a reaction solution. ZnO nanorods were respectively grown for 30 min, 1 h, 2 h, 3 h, and 4 h by maintaining the reactor at 90℃. Crystallinity of ZnO nanorods was analyzed by X-ray diffraction, and the morphology of nanorods was observed by a field emission scanning electron microscope. Transmittance and absorbance were measured by a UV-Vis spectrophotometer, and energy band gap and urbach energy were obtained from the data. Photoluminescence measurements were carried out using Nd-Yag laser (266 nm).

Using both EVA and POE encapsulants, we fabricated polycrystalline Si PV modules and performed a set of reliability tests of PID, DH, TC, and Complex prior to outdoor installation. The power output with temperatures and insolation as well as I-V characteristics had been monitored under outdoor environments for 18 months. In the entire period, the total power of 3,576 kWh from POE PV modules was observed larger than 3,449 kWh from EVA PV modules by 3.5%. All the PV modules showed a 5.6~9.2% drop in the conversion efficiency. As for the solar power generation, the PV modules performed through PID, TC test revealed distinct difference in between EVA and POE for which the POE PV module produced more power by +11.4% and +6.6%, respectively, as measured in the 18^th month. In addition, POE was proved to protect better the solar cells under PID influence.