We investigated a SiC-based hydrogen gas sensor with MIS (metal-insulator-semiconductor) structure for high temperature applications. The sensor was fabricated by Pd/TiO2/SiC structure, and a thin titanium dioxide (TiO2) layer was exploited for sensitivity improvement. In the experiment, dependences of I-V characteristics and capacitance response properties on hydrogen gas concentrations from 0 to 2,000 ppm were analyzed at room temperature to 400℃. As the result, our sensor using TiO2 dielectric layer showed possibilities with regard to use in hydrogen gas sensors for high-temperature applications.
