We design, develope and test a parallel active polymer pen lithography (PPL) device, which consists of individually addressable elastomeric probe tips. The PPL array chip is fabricated using soft lithography method with polydimethylsiloxane (PDMS) material. Individual probe can be pneumatically actuated via a computer controlled interface. We demonstrate parallel writing with 16 individually addressed pens, with each pen producing a different pattern in the same run. The largest proof-of-concept array fabricated is 4×4 with a spacing of 250 μm in both x and y axes.

The front electrode should be used to make solar cell panel so as to collect electron. The front electrode is used by paste type, printed on the Si-solar cell wafer and sintered at about 800℃. The paste is composed Ag powder and glass frit which make the ohmic contact between Ag electrode and n-type semiconductor layer. From the previous study, the Ag electrodes which used two commercial glass frit of Bi-system were so different on the interface resistance. The main composition of them was Bi-Zn-B-Si-O and few additives added in one of them. In this study, glass frit was made with the ratio of Bi2O3 and ZnO on the main composition, and then paste using glass frit was prepared respectively. And, also, the paste using the glass frit added oxide additives were prepared. The change of interface resistance was not large with the ratio of Bi2O3 and ZnO. In the case of G6 glass frit, 78 wt% Bi2O3 addition, the interface resistance was 190 Ω and most low. In the glass frit added oxide, the case of Ca increased over 10 times than it of G6 glass frit on the interface resistance. It was thaught that after sintering, Ca added glass frit was not flowed to the interface between Ag electrode and wafer but was in the Ag electrode.

SiC crystal ingots were grown on 6H-SiC dual-seed crystals with different surface roughness and different seed orientation by a PVT (Physical Vapor Transport) method. 4H and 15R-SiC were grown on seed crystal with high root-mean-square (rms) value. The polytype of grown crystal on the seed crystal with lower rms value was confirmed to be 6H-SiC. On the other hand, all SiC crystals grown on seed crystals with different seed orientation were proven to be 6H-SiC. The surface roughness of seed crystals had no effect on the crystal structure of the grown crystals. However, the crystal quality of 6H-SiC single crystals grown on the on-axis seed were revealed to be slightly better than that of 6H-SiC crystal grown on the off-axis seed.

The Ti adhesion layers were deposited onto the glass substrate for transparent capacitors using Bi2Mg2/3Nb4/3O7 (BMNO) dielectric thin films. Graphene was transferred onto the Ti/glass substrate after growing onto the Ni/SiO2/Si using rapid-thermal pulse CVD (RTPCVD). The BMNO dielectric thin films were investigated for the microstructure, dielectric and leakage properties in the case of capacitors with and without Ti adhesion layers. Leakage current and dielectric properties were strongly dependent on the Ti adhesion layers grown for graphene bottom electrode.

In this study, the leakage current - voltage characteristic and leakage current - time characteristic for the undegradated Ethylene Propylene Rubber and the Ethylene Propylene Rubber which is degradated by water tree for 200 hours have been measured on the temperature range of 50∼80℃ and applied DC voltage range of 200 V∼800 V for 90 minutes. The results of this study are listed below. In case the temperature is 50℃, it founds that the leakage current have shown a increase in proportion to the applied voltage as 2 pA in 200 V, 6 pA in 400 V, 10 pA in 600 V and 15 pA in 800 V. It founds that the leakage current increased with the rise of temperature. It founds that the leakage current was consistent as time goes by, the leakage current of the sample degradated by water tree for 200 hours has increased more than undegradated sample.

In this study, we have fabricated the dye sensitized solar cell (DSSC) composed by a transparent conductive oxide (TCO), a nanocrystalline semiconductor film usually TiO2, a sensitizer adsorbed on the surface of the semiconductor, an electrolyte containing a redox mediator and a counter electrode. The TiO2 nanopowder was prepared by sol-gel methode. The HCl (hydrochloric acid) and TBAOH (Tetrabutyl amonium hydroxide) was added for improving the catalyst and distributed properties of TiO2 nanopowder. Ammonium hydroixde was added in order to control the morphology and size of TiO2 nano crystal. A TiO2 paste for working electrode was prepared with the addition of HPC (hydroxypropyl cellulos) used as a binder of which volume was controled as 1.3, 1.5, 1.7, and 2.0%. The measured I-V curves of assembled DSSC showed that the cell with 1.7% HPC binder had the best efficiency of 6.79%.

We investigated a SiC-based hydrogen gas sensor with metal-insulator-semiconductor (MIS)structure for high temperature process monitoring and leak detection applications. The sensor was fabricated by Pd/Ta2O5/SiC structure, and a thin tantalum oxide (Ta2O5) layer was exploited with the purpose of sensitivity improvement, because tantalum oxide has good stability at high temperature as well as high permeability for hydrogen gas. In the experiment, dependence of I-V characteristics and capacitance response properties on hydrogen gas concentrations from 0 to 2,000 ppm was analyzed at room temperature to 500℃. As the result, our sensor exploiting a Ta2O5 dielectric layer showed possibilities with regard to use in hydrogen gas sensors for high-temperature applications.

In this paper, we prepared Cu(In,Ga)Se2 thin films by using co-evaporation method, and analyzed the properties of the thin films. During the thin film preparation process, we confirmed InGaSe2 phase was formed at 400℃ in first stage, and also confirmed the thin films showed the vacancy decrease. In second and third stage,we confirmed the density increase of crystalline structure at over 480℃ and the formation of Cu(In0.7Ga0.3)Se2phase. As the result of SEM and XRD analysis of the films which were before and after heat-treated, we confirmed the disappearance of Cu2Se2 and the formation of Cu(In0.7Ga0.3)Se2 single phase after the heat-treatment,We, therefore, confirmed the heat-treatment did not affect the absorbency spectra of the thin films.

Zinc oxide(ZnO) was sputtered on various glass and flexible substrates such as polyethylene terephthalate(PET) and polycarbonate(PC). A Q-switched Nd:YVO4 laser with a wavelength of 1,064 nm was used for the direct etching of ZnO films. It was possible to obtain laser etched line patterns on the ZnO films on PC substrate at some specific laser beam conditions. In the flexible substrates, more thermal energy of laser beam is expected to be spreaded for the etching process.

We investigated the luminescence properties of Alq3 in the device structure of ITO/CuPc/TPD/Alq3/Al. The CuPc as a hole-injection material and TPD as hole-transport material. Emission properties were measured by varying a layer thickness of CuPc (0 nm to 50 nm), which is the hole-injection layer. As a result, it was found that the hole injection occurs smoothly when the layer thickness was 20 nm among the thicknesses from 0 nm to 50 nm.

When an abnormal condition occurs due to a fault current at a consumer location where electricity is supplied through a high-capacity and high-Tc superconducting(HTS) cable, the HTS cable would be damaged if there is no appropriate measure to protect it. Therefore, appropriate measures are needed to protect HTS cables. The fault-current-limiting HTS cable that was suggested in this study performs an ideal transport current function in normal operations and plays a role in limiting a fault current in abnormal operation (i.e., when a fault current is applied). It has a structure that facilitated its self-current-limiting ability through device change and reconfiguration in the existing HTS cable without extra switching equipment. To complete this structure, it is essential to investigate about the selection of the superconducting wire. Therefore, in this paper, HTS wire using two types of different stabilization layer is compared and examined the stability and current limiting properties under the existence of a fault current.

CIGS is one of thin film solar cell and has been studied so much, because of the possibility of low price and high efficiency. Until now, co-evaporation and sputtering were typical method to prepare CIGS absorption layer, and a few company commercialized solar cell by these method. However,non-vacuum process which has been studied for long time has not been progressed, though the merit of low price. Especially, aerosol deposition method has not been reported, because it is difficult to prepare a large quantity of various CIGS powder. In this study, CIGS powder was synthesized by mechanochemical method and CIGS absorption layer was deposited by aerosol deposition method. The thickness of the CIGS layer was controlled by the number of deposition and the surface roughness of it was affected by the amount of flow gas. And, also, I-V curve of it appeared metallic property in the case of ‘as deposition’. After heat treatment in Se-rich atmosphere, the electrical property of it changed to a semiconductor. CdS and transparent conduction layer were formed by a typical method on it for solar cell. The efficiency of cell was appeared 0.19%. Though the efficiency was low because of the disharmony in the after-process, it was conformed that CIGS solar cell could be prepared by aerosol deposition.

This is the study on the development of fusion heat dissipation of carbon magnesium materials. The purpose of this study is for effective utilization of heat emission which is the core of LED lighting. The result of study enabled the derivation of side satisfying result of making the surface temperature of lighting to be below 70℃ (actual measurement: 58℃) using magnesium. The lighting products that use magnesium was made possible based on the result of this study. Also from the performance aspect such as light distribution, the measurement of light efficiency demonstrated the level of 90 lm/W. Therefore the commercialization of lighting was made possible and the efficiency could be further enhanced by supplementation of LED performance.

In this paper, the characteristics of a carbon nanotube composite heat sink proposed to replace the advanced Al heat sinks for LED lighting devices were studied. Proposed CMP-PLA heat sink was made by mixing 20∼70 wt% carbon nanotube, 20∼70 wt% bio-degradable polymer of melt-blended PLA (poly lactic acid) and PBS (poly butylene succinate) and PLA nucleating agents composed of the mixture of soybean oil and biotites, at 150∼220℃ with 1,000∼1,500 rpm. Optical and electric characteristics of 7.5W LED lighting devices using heat sinks with such prepared CMP-PLA were investigated. And, the properties of the heat, which was not released from the CMP-PLA type heat sinks, was also investigated. The color temperature of LED lighting devices using the CMP-PLA heat sinks was 5,956 K,which is x= 0.32 and y= 0.34 in the XY chromaticity, and the color rendering index was 75. The luminous flux and the luminous efficiency of LED lighting devices using the CMP-PLA heat sinks was 540.6 lm and 72.68 lm/W respectively. Measured initial temperature of the heat sinks was 27℃, and their temperature increased as time to be saturated at 52℃ after an hour.

In this study, we proposed CMP-PLAs to replace the Al heat sinks as heat sink materials, and investigated heat dissipation characteristics of the LED lighting devices using them. The crystallinity of the proposed CMP-PLA heat sinks decreased with increasing carbon nanotube contents in CMP-PLA. However, the thermal conductivity was improved with the increase of the carbon nanotube contents. The heat dissipation characteristics of the LED lighting devices using CMP-PLA heat sinks was improved with increasing carbon nanotube contents in CMP-PLA. For the LED lighting devices using CMP-PLA heat sinks with 40% carbon nanotube contents, the initial temperature measured at the heat sink plate was 27℃, which increased as time, and it was saturated around 56℃ after an hour. The LED lighting devices using CMP-PLA heat sinks are expected to be functional materials that can reduce their weight and improve their electric properties, compared to those using existing Al heat sinks.