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반도체 / 게이트 산화막으로 25 A 의 NO 질산화막을 사용한 PMOSFET 의 전기적인 특성 분석

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Analysis of The Electrical Characteristics of The PMOSFET Using a 25A Nitric Oxide for Gate Oxide

Ho Reol Park, Bong Jo Shin, Keun Hyung Park
J Electr Electron Mater 1999;12(9):757-764.
Published online: September 1, 1999
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Analysis of The Electrical Characteristics of The PMOSFET Using a 25A Nitric Oxide for Gate Oxide
J Electr Electron Mater. 1999;12(9):757-764.   Published online September 1, 1999
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Download a citation file in RIS format that can be imported by all major citation management software, including EndNote, ProCite, RefWorks, and Reference Manager.
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Analysis of The Electrical Characteristics of The PMOSFET Using a 25A Nitric Oxide for Gate Oxide
J Electr Electron Mater. 1999;12(9):757-764.   Published online September 1, 1999
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