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반도체 : SiH4 와 SiH2Cl2 가스에 의해 형성된 텅스텐 폴리사이드 전극이 게이트 산화막의 특성에 미치는 영향

서용진, 김상용, 장의구

Effects of Tungsten Polycide Electrode Formed by SiH4 and SiH2Cl2 Gases on Gate Oxide Characteristics

Yong Jin Seo, Sang Yong Kim, Eui Goo Chang
J Korean Inst Electr Electron Mater Eng 1999;12(5):394-400.
Published online: May 1, 1999
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Effects of Tungsten Polycide Electrode Formed by SiH4 and SiH2Cl2 Gases on Gate Oxide Characteristics
J Korean Inst Electr Electron Mater Eng. 1999;12(5):394-400.   Published online May 1, 1999
Download Citation

Download a citation file in RIS format that can be imported by all major citation management software, including EndNote, ProCite, RefWorks, and Reference Manager.
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Effects of Tungsten Polycide Electrode Formed by SiH4 and SiH2Cl2 Gases on Gate Oxide Characteristics
J Korean Inst Electr Electron Mater Eng. 1999;12(5):394-400.   Published online May 1, 1999
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