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반도체 : 산화막의 NO/N2O 질화와 재산화 공정을 이용한 전하트랩형 NVSM 용 게이트 유전막의 성장과 특성

윤성필, 이상은, 김선주, 서광열, 이상배

Growth and Characteristics of NO/N2O Oxynitrided and Reoxidized Gate Dielectrics for Charge Trapping NVSMs

Sung Pil Yoon, Sang Eun Lee, Seon Ju Kim, Kwang Yell Seo, Sang Bae Yi
J Electr Electron Mater 1999;12(5):389-393.
Published online: May 1, 1999
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Growth and Characteristics of NO/N2O Oxynitrided and Reoxidized Gate Dielectrics for Charge Trapping NVSMs
J Electr Electron Mater. 1999;12(5):389-393.   Published online May 1, 1999
Download Citation

Download a citation file in RIS format that can be imported by all major citation management software, including EndNote, ProCite, RefWorks, and Reference Manager.
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Growth and Characteristics of NO/N2O Oxynitrided and Reoxidized Gate Dielectrics for Charge Trapping NVSMs
J Electr Electron Mater. 1999;12(5):389-393.   Published online May 1, 1999
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