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Si1-yGey 위에 성장시킨 Si1-xGex에서 성장방향과 응력변형 조건에 따른 정공의 이동도 연구

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Dependence of Hole Mobilities on the Growth Direction and Strain Condition in Si1-xGex Layers Grown on Si1-yGey Substrate

Sang Kook Chun
J Electr Electron Mater 1998;11(4):267-273.
Published online: April 1, 1998
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Dependence of Hole Mobilities on the Growth Direction and Strain Condition in Si1-xGex Layers Grown on Si1-yGey Substrate
J Electr Electron Mater. 1998;11(4):267-273.   Published online April 1, 1998
Download Citation

Download a citation file in RIS format that can be imported by all major citation management software, including EndNote, ProCite, RefWorks, and Reference Manager.

Format:
Include:
Dependence of Hole Mobilities on the Growth Direction and Strain Condition in Si1-xGex Layers Grown on Si1-yGey Substrate
J Electr Electron Mater. 1998;11(4):267-273.   Published online April 1, 1998
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