Pure BiFeO3 (BFO) and (Eu, V) co-doped Bi0.9Eu0.1Fe0.975V0.025O3+δ (BEFVO) thin films were deposited on Pt(111)/Ti/SiO2/Si(100) substrates by chemical solution deposition. The effects of co-doping were observed by X-ray diffraction, Raman spectroscopy, and scanning electron microscopy (SEM). The electrical properties of the BEFVO thin film were improved as compared to those of the pure BFO thin film. The remnant polarization (2Pr) of the BEFVO thin film was approximately 26 μC/cm2 at a maximum electric field of 1,190 kV/cm with a frequency of 1 kHz. The leakage current density of the co-doped BEFVO thin film (4.81×10-5 A/cm2 at 100 kV/cm) was two orders of magnitude lower than of that of the pure BFO thin film.
