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낮은 TCR 특성을 가지는 플레이트 션트저항의 전기적 특성

임영택, 김은민, 이상원, 안정래, 이선우

Electrical Properties of Plate Typed Shunt Resistors with Low TCR Property

Youngtaek Lim, Eun-min Kim, Sang-won Lee, Jeong-rae Ahn, Sunwoo Lee
J Electr Electron Mater 2019;32(3):219-222.
Published online: May 1, 2019
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In this study, we fabricated plate-type shunt resistors with thermal stability by parallelly connecting metal alloy plates with positive temperature coefficient of resistance (TCR) and carbon nanotube (CNT) plates with negative TCR. The metal alloy plates, which were prepared by alloying Cu and Mn with a composition of 91 wt% of Cu and 9 wt% of Mn, showed around 800 ppm/℃ of TCR, and the CNT plates prepared from the CNT solution by using the vacuum filtration method showed around -800 ppm/℃ of TCR. The shunt resistor that was fabricated by stacking metal alloy plates and CNT plates in this work showed about 46.93 ppm/℃ of TCR. Therefore, we conclude that a shunt resistor with low TCR can be realized by simply adjusting the TCR of the metal alloy only, because the TCR of the CNT plate has an identical value.

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Electrical Properties of Plate Typed Shunt Resistors with Low TCR Property
J Electr Electron Mater. 2019;32(3):219-222.   Published online May 1, 2019
Download Citation

Download a citation file in RIS format that can be imported by all major citation management software, including EndNote, ProCite, RefWorks, and Reference Manager.

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Electrical Properties of Plate Typed Shunt Resistors with Low TCR Property
J Electr Electron Mater. 2019;32(3):219-222.   Published online May 1, 2019
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