Sintering and microwave dielectric properties of Zn2-2xSil+xO4 (x=O-0.10) ceramics were investigated. The secondary phase of ZnO was observed in the specimen for x=O whereas SiO2 was detected in that for x=0.05. The composition of Zn2SiO4 might be close to x=0.02, i.e., Zn1.96Si1.02O4; the ratio of Zn/Si is 1.922. The insufficient grain growth was observed in the specimen of x=O. For the specimens of x≥0.05 , the grain growth sufficiently occurred through the liquid phase sintering. The value of quality factor of all specimens was dependent on the x value, i.e., the ratio of Zn/Si, whereas that of dielectric constant was independent. Relative density, dielectric constant, and quality factor (Q×f) of the specimen for x=0.05, i.e., Znl.9Si1.05O4, sintered at 1,400℃ were 96.5%, 6.43, and 115,166 GHz, respectively.
