The dependency of processing pressure on the electrical performances in amorphous silicon -zinc-tin-oxide thin film transistors (SZTO-TFT) has been investigated. The SZTO channel layers were deposited by using radio frequency (RF) magnetron sputtering method with different partial pressure. The field effect mobility (μFE) increased and threshold voltage (Vth) shifted to negative direction with increasing pressure during deposition processing. As a result, oxygen vacancies generated in SZTO channel layer with increasing partial pressure resulted in negative shift in Vth and increase in on-current.
