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J Electr Electron Mater : Journal of Electrical and Electronic Materials

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MEMS기반 에너지 하베스터 제작을 위한 실리콘 KOH 식각 모형화

민철홍, 강경우, 김태선

Modeling of Silicon Etch in KOH for MEMS Based Energy Harvester Fabrication

Chul Hong Min, Gyeong Woo Gang, Tae Seon Kim
J Electr Electron Mater 2012;25(3):176-181.
Published online: March 1, 2012
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Due to the high etch rate and low fabrication cost, the wet etching of silicon using KOH etchant is widely used in MEMS fabrication area. However, anisotropic etch characteristic obstruct intuitional mask design and compensation structures are required for mask design level. Therefore, the accurate modeling for various types of silicon surface is essential for fabrication of three-dimensional MEMS structure. In this paper, we modeled KOH etch profile for MEMS based energy harvester using fuzzy logic. Modeling results are compared with experimental results and it is applied to design of compensation structure for MEMS based energy harvester. Through Fuzzy inference approaches, developed model showed good agreement with the experimental results with limited etch rate information.

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Modeling of Silicon Etch in KOH for MEMS Based Energy Harvester Fabrication
J Electr Electron Mater. 2012;25(3):176-181.   Published online March 1, 2012
Download Citation

Download a citation file in RIS format that can be imported by all major citation management software, including EndNote, ProCite, RefWorks, and Reference Manager.

Format:
Include:
Modeling of Silicon Etch in KOH for MEMS Based Energy Harvester Fabrication
J Electr Electron Mater. 2012;25(3):176-181.   Published online March 1, 2012
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