Single-phase Sr2FeMoO6 thin films were produced by RF magnetron sputtering for use as electrodes in integrated sensors and found to be good conductors at room temperature. The films were deposited from a powder-type sputtering target under various conditions, and were crystallized by annealing. Elimination of O2 gas during deposition, by the use of a solely Ar sputtering gas under a working pressure as low as possible, and vacuum annealing were important to promote the Sr2FeMoO6 phase. However, oxygen exclusion from sputtering and annealing was not enough to yield single-phase Sr2FeMoO6: hydrogen annealing was also required. Film production was optimized by varying the deposition parameters and hydrogen annealing conditions. The film had good electrical conduction, with a low resistivity of 1.6×10(-2)Ω·cm at room temperature.
