In this study, we investigated the optical, electrical, and structural properties of the IGZO(In2O3:Ga2O3:ZnO=1:9:90 wt.%) thin films prepared by RF-magnetron sputtering system under various substrate temperatures. All of the IGZO thin films shows an average transmittance of over the 80% in visible range. Most of all, deposited IGZO thin film at 100 ˚C substrate temperature have ZnO (002) of main growth peak and 17.02 nm of increased grains. And also IGZO thin film have low resistivity(1.35×10(-3) Ω·cm), high carrier concentration(6.62X10(20) cm-3) and mobility(80.1 cm2/Vsec). IGZO thin film have 2.08 mV at surface potential of electric force microscopy(EFM). We suggest that pre-annealing at 100 ˚C can be applied for improving optical, electrical and structural properties.
