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P형 우물 영역의 도핑 농도와 면적에 따른 4H-SiC 기반 DMOSFET 소자 구조의 최적화

안정준, 방욱, 김상철, 김남균, 정홍배, 구상모

Optimization of 4H-SiC DMOSFETs by Adjustment of the Dimensions and Level of the p-base Region

Jung Joon Ahn, Wook Bahng, Sang Chul Kim, Nam Kyun Kim, Hong Bae Jung, Sang Mo Koo
J Electr Electron Mater 2010;23(7):513-516.
Published online: July 1, 2010
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Optimization of 4H-SiC DMOSFETs by Adjustment of the Dimensions and Level of the p-base Region
J Electr Electron Mater. 2010;23(7):513-516.   Published online July 1, 2010
Download Citation

Download a citation file in RIS format that can be imported by all major citation management software, including EndNote, ProCite, RefWorks, and Reference Manager.
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Optimization of 4H-SiC DMOSFETs by Adjustment of the Dimensions and Level of the p-base Region
J Electr Electron Mater. 2010;23(7):513-516.   Published online July 1, 2010
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