Effect of Interface Charges on the Transient Characteristics of 4H-SiC DMOSFETs

Min Seok Kang; Kyoung Sook Moon; Sang Mo Koo

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4H-SiC DMOSFETs의 계면 전하 밀도에 따른 스위칭 특성 분석

강민석, 문경숙, 구상모

Effect of Interface Charges on the Transient Characteristics of 4H-SiC DMOSFETs

Min Seok Kang, Kyoung Sook Moon, Sang Mo Koo

J Electr Electron Mater 2010;23(6):436-439.
Published online: June 1, 2010

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Keywords: Silicon carbide, Transient, Interface charge, DMOSFET

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Effect of Interface Charges on the Transient Characteristics of 4H-SiC DMOSFETs

J Electr Electron Mater. 2010;23(6):436-439. Published online June 1, 2010

Download Citation

Download a citation file in RIS format that can be imported by all major citation management software, including EndNote, ProCite, RefWorks, and Reference Manager.

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Effect of Interface Charges on the Transient Characteristics of 4H-SiC DMOSFETs

J Electr Electron Mater. 2010;23(6):436-439. Published online June 1, 2010

Articles

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4H-SiC DMOSFETs의 계면 전하 밀도에 따른 스위칭 특성 분석

Effect of Interface Charges on the Transient Characteristics of 4H-SiC DMOSFETs

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