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J Electr Electron Mater : Journal of Electrical and Electronic Materials

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GaAs MESFET 의 파괴특성 향상을 위한 Recess 게이트 구조

장윤영, 송정근

The Recess Gate Structure for The Improvement of Breadown Characteristics of GaAs MESFET

Youn Young Jang, Chung Kun Song
J Electr Electron Mater 1994;7(5):376-382.
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The Recess Gate Structure for The Improvement of Breadown Characteristics of GaAs MESFET
J Electr Electron Mater. 1994;7(5):376-382.
Download Citation

Download a citation file in RIS format that can be imported by all major citation management software, including EndNote, ProCite, RefWorks, and Reference Manager.

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The Recess Gate Structure for The Improvement of Breadown Characteristics of GaAs MESFET
J Electr Electron Mater. 1994;7(5):376-382.
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