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SF6, C4F8, O2 가스 변화에 따른 실리콘 식각율과 식각 형태 개선

권순일, 양계준, 송우창, 임동건

Improvement of Etch Rate and Profile by SF6, C4F8 and O2 Gas Modulation

Soon Il Kwon, Kea Joon Yang, Woo Chang Song, Dong Gun Lim
J Electr Electron Mater 2008;21(4):305-310.
Published online: April 1, 2008
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Improvement of Etch Rate and Profile by SF6, C4F8 and O2 Gas Modulation
J Electr Electron Mater. 2008;21(4):305-310.   Published online April 1, 2008
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Download a citation file in RIS format that can be imported by all major citation management software, including EndNote, ProCite, RefWorks, and Reference Manager.
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Improvement of Etch Rate and Profile by SF6, C4F8 and O2 Gas Modulation
J Electr Electron Mater. 2008;21(4):305-310.   Published online April 1, 2008
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