Skip to main navigation Skip to main content
  • KIEEME

J Electr Electron Mater : Journal of Electrical and Electronic Materials

OPEN ACCESS
ABOUT
BROWSE ARTICLES
EDITORIAL POLICIES
FOR CONTRIBUTORS

Articles

고농도의 Ge 함량을 가진 Biaxially Strained SiGe/Si Channel Structure의 정공 이동도 특성

정종완

Hole Mobility Characteristics of Biaxially Strained SiGe/Si Channel Structure with High Ge Content

J Electr Electron Mater 2008;21(1):44-48.
Published online: January 1, 2008
  • 5 Views
  • 0 Download
  • 0 Crossref
  • 0 Scopus
prev next

Download Citation

Download a citation file in RIS format that can be imported by all major citation management software, including EndNote, ProCite, RefWorks, and Reference Manager.

Format:

Include:

Hole Mobility Characteristics of Biaxially Strained SiGe/Si Channel Structure with High Ge Content
J Electr Electron Mater. 2008;21(1):44-48.   Published online January 1, 2008
Download Citation

Download a citation file in RIS format that can be imported by all major citation management software, including EndNote, ProCite, RefWorks, and Reference Manager.

Format:
Include:
Hole Mobility Characteristics of Biaxially Strained SiGe/Si Channel Structure with High Ge Content
J Electr Electron Mater. 2008;21(1):44-48.   Published online January 1, 2008
Close