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J Electr Electron Mater : Journal of Electrical and Electronic Materials

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수소 및 중수소가 포함된 실리콘 산화막의 전기적 스트레스에 의한 열화특성

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Degradation of Ultra-thin SiO2 Film Incorporated with Hydrogen or Deuterium Bonds during Electrical Stress

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J Electr Electron Mater 2005;18(11):996-1000.
Published online: November 1, 2005
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Degradation of Ultra-thin SiO2 Film Incorporated with Hydrogen or Deuterium Bonds during Electrical Stress
J Electr Electron Mater. 2005;18(11):996-1000.   Published online November 1, 2005
Download Citation

Download a citation file in RIS format that can be imported by all major citation management software, including EndNote, ProCite, RefWorks, and Reference Manager.

Format:
Include:
Degradation of Ultra-thin SiO2 Film Incorporated with Hydrogen or Deuterium Bonds during Electrical Stress
J Electr Electron Mater. 2005;18(11):996-1000.   Published online November 1, 2005
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