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90 nm급 텅스텐 폴리사이드 게이트 식각공정에서 식각종말점의 안정화에 관한 연구

고용득, 천희곤, 이징혁

A Study for Stable End Point Detection in 90 nm WSix/poly-Si Stack-down Gate Etching Process

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J Electr Electron Mater 2005;18(3):206-211.
Published online: March 1, 2005
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A Study for Stable End Point Detection in 90 nm WSix/poly-Si Stack-down Gate Etching Process
J Electr Electron Mater. 2005;18(3):206-211.   Published online March 1, 2005
Download Citation

Download a citation file in RIS format that can be imported by all major citation management software, including EndNote, ProCite, RefWorks, and Reference Manager.

Format:
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A Study for Stable End Point Detection in 90 nm WSix/poly-Si Stack-down Gate Etching Process
J Electr Electron Mater. 2005;18(3):206-211.   Published online March 1, 2005
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