Dry-etch Characteristics of InP/InGaAsP Photonic Crystal Structure

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InP/InGaAsP 광자결정 구조 제작을 위한 건식 식각 특성

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Dry-etch Characteristics of InP/InGaAsP Photonic Crystal Structure

J Electr Electron Mater 2004;17(12):1271-1276.
Published online: December 1, 2004

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Keywords: Photonic crystal, RIE, InP, Nanofabrication, Damage removal

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Dry-etch Characteristics of InP/InGaAsP Photonic Crystal Structure

J Electr Electron Mater. 2004;17(12):1271-1276. Published online December 1, 2004

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Download a citation file in RIS format that can be imported by all major citation management software, including EndNote, ProCite, RefWorks, and Reference Manager.

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Dry-etch Characteristics of InP/InGaAsP Photonic Crystal Structure

J Electr Electron Mater. 2004;17(12):1271-1276. Published online December 1, 2004

Articles

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InP/InGaAsP 광자결정 구조 제작을 위한 건식 식각 특성

Dry-etch Characteristics of InP/InGaAsP Photonic Crystal Structure

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