Electrical properties of the gate oxides by thermal oxidation in N2O gas

Cheol In Lee; Hyun Sik Choi; Young Jin Seo; Chang Il Kim; Tae Hyung Kim; Eui Goo Chang

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N2O 가스로 열산화된 게이트 산화막의 특성

이철인, 최현식, 서용진, 김창일, 김태형, 장의구

Electrical properties of the gate oxides by thermal oxidation in N2O gas

Cheol In Lee, Hyun Sik Choi, Young Jin Seo, Chang Il Kim, Tae Hyung Kim, Eui Goo Chang

J Electr Electron Mater 1993;6(3):269-275.

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Electrical properties of the gate oxides by thermal oxidation in N2O gas

J Electr Electron Mater. 1993;6(3):269-275.

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Download a citation file in RIS format that can be imported by all major citation management software, including EndNote, ProCite, RefWorks, and Reference Manager.

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Electrical properties of the gate oxides by thermal oxidation in N2O gas

J Electr Electron Mater. 1993;6(3):269-275.

Articles

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N2O 가스로 열산화된 게이트 산화막의 특성

Electrical properties of the gate oxides by thermal oxidation in N2O gas

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